请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGR50N60C2D1

型号：

IXGR50N60C2D1

描述：

HiPerFAST IGBT与二极管C2级高速的IGBT[ HiPerFAST IGBT with Diode C2-Class High Speed IGBTs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

511 K

下载PDF手册
HiPerFASTTM  
IGBT with Diode  
IXGR 50N60C2  
IXGR 50N60C2D1  
VCES  
IC25  
VCE(sat)  
tfi(typ)  
= 600 V  
= 75 A  
= 2.7 V  
= 48 ns  
C2-Class High Speed IGBTs  
Preliminary Data Sheet  
Symbol  
TestConditions  
Maximum Ratings  
ISOPLUS247  
(IXGR)  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
(ISOLATED TAB)  
G = Gate  
E = Emitter  
C = Collector  
IC25  
IC110  
ICM  
TC = 25°C  
75  
36  
A
A
A
TC = 110°C  
TC = 25°C, 1 ms  
300  
Features  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
ICM = 100  
A
• Very high frequency IGBT and  
anti-parallel FRED in one package  
• Square RBSOA  
(RBSOA)  
Clamped inductive load @ VCE ≤ 600 V  
PC  
TC = 25°C  
200  
W
• High current handling capability  
VISOL  
TJ  
50/60 Hz RMS, t = 1m  
2500  
-55 ... +150  
150  
V
°C  
°C  
°C  
• MOS Gate turn-on for drive simplicity  
• Fast Recovery Epitaxial Diode (FRED)  
TJM  
Tstg  
with soft recovery and low IRM  
-55 ... +150  
Applications  
Weight  
5
g
• Switch-mode and resonant-mode  
power supplies  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
• Uninterruptible power supplies (UPS)  
• DC choppers  
• AC motor speed control  
• DC servo and robot drives  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
3.0  
5.0  
V
Advantages  
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
650  
5
µA  
mA  
• Space savings (two devices in one  
package)  
• Easy to mount with 1 screw  
IGES  
VCE = 0 V, VGE = 20 V  
100  
2.7  
nA  
VCE(sat)  
IC = 40 A, VGE = 15 V  
Note 1  
TJ = 25°C  
TJ = 125°C  
V
V
1.8  
© 2004 IXYS All rights reserved  
DS99163(04/04)  
IXGR 50N60C2  
IXGR 50N60C2D1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
ISOPLUS 247 Outline  
IC = 40 A; VCE = 10 V,  
Note 1  
40  
51  
S
Cies  
Coes  
Cres  
3700  
290  
50  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
138  
25  
nC  
nC  
nC  
Qge  
Qgc  
IC = 40 A, VGE = 15 V, VCE = 0.5 VCES  
40  
td(on)  
tri  
td(off)  
tfi  
18  
25  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 40 A, VGE = 15 V  
115 150 ns  
48 ns  
0.38 0.7 mJ  
VCE = 480 V, RG = Roff = 2.0 Ω  
Eoff  
td(on)  
tri  
18  
25  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 40 A, VGE = 15 V  
Eon  
td(off)  
tfi  
1.4  
mJ  
ns  
170  
60  
VCE = 480 V, RG = Roff = 2.0 Ω  
ns  
Eoff  
0.74  
mJ  
RthJC  
RthCK  
0.62 K/W  
K/W  
0.15  
ReverseDiode(FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = 60 A, VGE = 0 V,  
Note 1  
2.1  
1.4  
V
A
TJ = 150°C  
IRM  
IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C  
VR = 100 V  
8.3  
trr  
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V  
35  
ns  
0.85 K/W  
RthJC  
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
6,534,343  
6,583,505  
IXGR 50N60C2  
IXGR 50N60C2D1  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
80  
70  
60  
50  
40  
30  
20  
10  
0
320  
280  
240  
200  
160  
120  
80  
VGE = 15V  
13V  
11V  
9V  
VGE = 15V  
13V  
11V  
7V  
6V  
9V  
7V  
40  
5V  
5V  
7
0
0.5  
0.5  
5
1
1.5  
2
2.5  
3
3.5  
4
0
1
2
3
4
VC E - Volts  
5
6
8
9
10  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
VGE = 15V  
13V  
11V  
9V  
VGE = 15V  
7V  
IC = 80A  
6V  
IC = 40A  
IC = 20A  
5V  
1
1.5  
2 2.5  
VCE - Volts  
3
3.5  
4
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
4.8  
4.5  
4.2  
3.9  
3.6  
3.3  
3
TJ = 25ºC  
IC = 80A  
40A  
20A  
60  
TJ = 125ºC  
25ºC  
40  
2.7  
2.4  
20  
0
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
9
6
7
8
9
10 11 12 13 14 15 16 17  
VG E - Volts  
VG E - Volts  
© 2004 IXYS All rights reserved  
IXGR 50N60C2  
IXGR 50N60C2D1  
Fig. 8. Dependence of Turn-Off  
Ene r gy on RG  
Fig. 7. Transconductance  
70  
60  
50  
40  
30  
20  
10  
0
3
2.7  
2.4  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
0
TJ = 125ºC  
VGE = 15V  
VCE = 480V  
TJ = 25ºC  
125ºC  
IC = 80A  
IC = 40A  
IC = 20A  
0
20  
2
20 40 60 80 100 120 140 160 180 200  
2
4
6
8
10  
12  
14  
16  
18  
I C - Amperes  
R G - Ohms  
Fig. 9. Dependence of Turn-Off  
Ene r gy on Ic  
Fig. 10. Dependence of Turn-Off  
Energy on Temperature  
2.2  
2
2.4  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
0
RG = 2Ω  
RG = 10Ω - - - -  
VGE = 15V  
RG = 2Ω  
RG = 10Ω - - - -  
1.8  
1.6  
1.4  
1.2  
1
VGE = 15V  
VCE = 480V  
VCE = 480V  
IC = 80A  
TJ = 125ºC  
0.8  
0.6  
0.4  
0.2  
0
IC = 40A  
TJ = 25ºC  
IC = 20A  
25 35 45 55 65 75 85 95 105 115 125  
30  
40 50  
I C - Amperes  
60  
70  
80  
TJ - Degrees Centigrade  
Fig. 11. Dependence of Turn-Off  
Switching Time on RG  
Fig. 12. Dependence of Turn-Off  
Switching Time on Ic  
450  
400  
350  
300  
250  
200  
150  
100  
50  
200  
180  
160  
140  
120  
100  
80  
td(off)  
td(off)  
tfi  
RG = 2Ω  
t -  
- - - - -  
TJ = 125ºC  
GE = 15V  
VCE = 480V  
- - - - - -  
fi  
V
V
GE = 15V  
V
CE = 480V  
TJ = 125ºC  
IC = 20A  
IC = 40A  
TJ = 25ºC  
IC = 80A  
60  
40  
4
6
8 10  
R G - Ohms  
12  
14  
16  
18  
20  
30  
40  
50  
I C - Amperes  
60  
70  
80  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
6,534,343  
6,583,505  
IXGR 50N60C2  
IXGR 50N60C2D1  
Fig. 13. Dependence of Turn-Off  
Switching Time on Temperature  
Fig. 14. Reverse-Bias  
Safe Operating Area  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
200  
180  
160  
140  
120  
100  
80  
td(off)  
tfi - - - - - -  
RG = 2Ω  
IC = 20A  
VGE = 15V  
VCE = 480V  
IC = 80A  
º
TJ = 125 C  
G = 10Ω  
dV/dT < 10V/ns  
IC = 40A  
R
60  
40  
IC = 20A  
20  
25 35 45 55 65 75 85 95 105 115 125  
TJ - Degrees Centigrade  
100  
200  
300 400  
V C E - Volts  
500  
600  
Fig. 16. Capacitance  
Fig. 15. Gate Charge  
16  
14  
12  
10  
8
10000  
1000  
100  
VCE = 300V  
IC = 40A  
IG = 10mA  
f = 1 MHz  
C
ies  
6
C
C
oes  
res  
4
2
0
10  
0
30  
60  
90  
120  
150  
0
5
10  
15  
20  
VC E - Volts  
25  
30  
35  
40  
Q G - nanoCoulombs  
Fig. 16. M axim um Trans ie nt The rm al Re s is tance  
0.70  
0.60  
0.50  
0.40  
0.30  
0.20  
0.10  
0.00  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2004 IXYS All rights reserved  
IXGR 50N60C2  
IXGR 50N60C2D1  
160  
A
140  
4000  
nC  
80  
TVJ= 100°C  
VR = 300V  
TVJ= 100°C  
VR = 300V  
A
120  
100  
80  
60  
40  
20  
0
3000  
2000  
1000  
0
60  
IF  
TVJ= 25°C  
TVJ=100°C  
IF=120A  
IF= 60A  
IF= 30A  
IRM  
Qr  
IF=120A  
IF= 60A  
IF= 30A  
40  
20  
0
TVJ=150°C  
A/µs  
-diF/dt  
0
1
2
V
100  
1000  
0
200 400 600 1000  
A/µs  
-diF/dt  
VF  
Fig. 19 Reverse recovery charge Qr  
versus -diF/dt  
Fig. 20 Peak reverse current IRM  
versus -diF/dt  
Fig. 18 Forward current IF versus VF  
2.0  
140  
20  
V
1.6  
µs  
TVJ= 100°C  
VR = 300V  
ns  
130  
VFR  
tfr  
trr  
1.5  
Kf  
15  
10  
5
1.2  
VFR  
tfr  
120  
110  
100  
90  
IF=120A  
IF= 60A  
IF= 30A  
1.0  
0.8  
0.4  
0.
IRM  
0.5  
Qr  
TVJ= 100°C  
IF = 60A  
0.0  
80  
0
A/µs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
°C  
A/µs  
diF/dt  
TVJ  
-diF/dt  
Fig. 21 Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 22 Recovery time trr versus -diF/dt  
Fig. 23 Peak forward voltage VFR and  
tfr  
versus diF/dt  
1
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
0.1  
1
2
3
4
0.3073  
0.3533  
0.0887  
0.1008  
0.0055  
0.0092  
0.0007  
0.0399  
ZthJC  
0.01  
0.001  
DSEP 2x61-06A  
0.0001  
s
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 24 Transient thermal resistance junction to case  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
6,534,343  
6,583,505  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

 		IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

 		IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.188240s