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IXGH36N60A3

型号：

IXGH36N60A3

描述：

GenX3 600V IGBT[ GenX3 600V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

227 K

下载PDF手册
Preliminary Technical Information  
GenX3TM 600V IGBT  
IXGA36N60A3  
IXGP36N60A3  
IXGH36N60A3  
VCES = 600V  
IC110 = 36A  
VCE(sat) ≤ 1.4V  
Ultra Low Vsat PT IGBT for  
up to 5kHz switching  
TO-263 (IXGA)  
G
Symbol  
Test Conditions  
Maximum Ratings  
E
(TAB)  
VCES  
VCGR  
TC = 25°C to 150°C  
600  
600  
V
V
TO-220 (IXGP)  
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
(TAB)  
G
IC110  
ICM  
TC = 110°C  
36  
A
A
C
E
TC = 25°C, 1ms  
200  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 5Ω  
ICM = 60  
A
TO-247 (IXGH)  
(RBSOA)  
Clamped inductive load @ ≤ 600V  
PC  
TC = 25°C  
220  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G
(TAB)  
C
-55 ... +150  
E
TL  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
G = Gate  
E = Emitter  
C
= Collector  
TSOLD  
TAB = Collector  
Md  
Mounting torque (TO-247 & TO-220)  
1.13/10  
Nm/lb.in.  
Features  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
z Optimized for low conduction losses  
z International standard packages  
Advantages  
z High power density  
z Low gate drive requirement  
Symbol Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
Min.  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
600  
3.0  
V
V
z Power Inverters  
z UPS  
5.0  
z Motor Drives  
ICES  
VCE = VCES  
VGE = 0V  
25 μA  
250 μA  
z SMPS  
z PFC Circuits  
TJ = 125°C  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
z Inrush Current Protection Circuits  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = 30A, VGE = 15V, Note 1  
1.4  
V
© 2008 IXYS CORPORATION, All rights reserved  
DS100006(07/08)  
IXGA36N60A3 IXGP36N60A3  
IXGH36N60A3  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXGH) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 30A, VCE = 10V, Note 1  
25  
42  
S
Cies  
Coes  
Cres  
2380  
115  
30  
pF  
∅ P  
VCE = 25V, VGE = 0V, f = 1MHz  
pF  
pF  
Qg  
80  
12  
36  
nC  
nC  
nC  
Qge  
Qgc  
IC = 30A, VGE = 15V, VCE = 0.5 • VCES  
e
td(on)  
tri  
18  
23  
ns  
Dim.  
Millimeter  
Inches  
Min. Max.  
ns  
mJ  
ns  
Min. Max.  
Inductive Load, TJ = 25°C  
IC = 30A, VGE = 15V  
Eon  
td(off)  
tfi  
0.74  
330  
325  
3.00  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
VCE = 400V, RG = 5Ω  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
ns  
Eoff  
mJ  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
td(on)  
tri  
18  
25  
ns  
ns  
20.80 21.46  
15.75 16.26  
Inductive Load, TJ = 25°C  
IC = 30A, VGE = 15V  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Eon  
td(off)  
tfi  
1.50  
500  
500  
5.30  
mJ  
ns  
.780 .800  
.177  
VCE = 400V, RG = 5Ω  
∅P 3.55  
Q
3.65  
.140 .144  
ns  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Eoff  
mJ  
RthJC  
RthCS  
0.56 °C/W  
(TO-247)  
(TO-220)  
0.25  
0.50  
°C/W  
°C/W  
TO-220 (IXGP) Outline  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
TO-263 (IXGA) Outline  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS MOSFETs and IGBTs are covered  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
6,259,123 B1  
6,306,728 B1  
IXGA36N60A3 IXGP36N60A3  
IXGH36N60A3  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
300  
270  
240  
210  
180  
150  
120  
90  
VGE = 15V  
VGE = 15V  
13V  
11V  
13V  
11V  
9V  
9V  
7V  
7V  
5V  
60  
5V  
30  
0
0
0.0  
0.2  
0.2  
6
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.0  
15  
0
2
4
6
8
10  
12  
14  
16  
150  
8.5  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 60A  
9V  
7V  
5V  
I C = 30A  
I C = 15A  
0
0.0  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
-50  
-25  
0
25  
50  
75  
100  
125  
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
180  
160  
140  
120  
100  
80  
TJ = 25ºC  
I C = 60A  
30A  
15A  
60  
TJ = 125ºC  
25ºC  
- 40ºC  
40  
20  
0
5
7
8
9
10  
11  
12  
13  
14  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGA36N60A3 IXGP36N60A3  
IXGH36N60A3  
Fig. 17. Gate Charge  
Fig. 7. Transconductance  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
VCE = 600V  
TJ = - 40ºC  
I C = 30A  
I G = 10 mA  
25ºC  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100 120 140 160 180 200  
0
10  
20  
30  
40  
50  
60  
70  
80  
QG - NanoCoulombs  
IC - Amperes  
Fig. 19. Reverse-Bias Safe Operating Area  
Fig. 18. Capacitance  
70  
60  
50  
40  
30  
20  
10  
0
10,000  
1,000  
100  
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
RG = 5Ω  
dV / dt < 10V / ns  
10  
100  
200  
300  
400  
500  
600  
700  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS REF: G_36N60A3(55) 07-03-08-A  
IXGA36N60A3 IXGP36N60A3  
IXGH36N60A3  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 13. Inductive Switching Energy Loss vs.  
Junction Temperature  
11  
10  
9
2.0  
12  
11  
10  
9
4.0  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
E
E
on - - - -  
off  
RG = 5Ω VGE = 15V  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
,
CE = 400V  
V
I C = 60A  
I C = 60A  
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
CE = 400V  
8
V
7
8
6
7
I C = 30A  
5
6
I C = 30A  
4
5
3
4
2
3
I C = 15A  
I C = 15A  
1
2
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
0
10 20 30 40 50 60 70 80 90 100 110 120  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 15. Inductive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Collector Current  
950  
1300  
1200  
1100  
1000  
900  
11  
10  
9
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
t f  
TJ = 125ºC, VGE = 15V  
t
d(off) - - - -  
900  
850  
800  
750  
700  
650  
600  
550  
500  
450  
E
E
on - - - -  
off  
RG = 5ꢀ VGE = 15V  
,
CE = 400V  
VCE = 400V  
V
8
7
800  
6
I C = 60A  
TJ = 125ºC  
700  
5
600  
TJ = 25ºC  
4
I C = 15A, 30A  
500  
3
400  
2
300  
1
0
10 20 30 40 50 60 70 80 90 100 110 120  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
RG - Ohms  
IC - Amperes  
Fig. 16. Inductive Turn-off Switching Times  
vs. Collector Current  
Fig. 17. Inductive Turn-off Switching Times  
vs. Junction Temperature  
850  
800  
750  
700  
650  
600  
550  
500  
450  
400  
350  
300  
250  
600  
570  
540  
510  
480  
450  
420  
390  
360  
330  
300  
270  
240  
800  
750  
700  
650  
600  
550  
500  
450  
400  
350  
300  
640  
600  
560  
520  
480  
440  
400  
360  
320  
280  
240  
t f  
RG = 5Ω , VGE = 15V  
t
d(off) - - - -  
t f  
RG = 5ꢀ , VGE = 15V  
td(off) - - - -  
VCE = 400V  
VCE = 400V  
TJ = 125ºC  
`
I C = 15A, 30A, 60A  
TJ = 25ºC  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IC - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXGA36N60A3 IXGP36N60A3  
IXGH36N60A3  
Fig. 18. Inductive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 19. Inductive Turn-on Switching Times  
vs. Junction Temperature  
150  
135  
120  
105  
90  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
27  
26  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGE = 15V  
25  
I C = 60A  
I C = 60A  
VCE = 400V  
24  
23  
t r  
RG = 5Ω , VGE = 15V  
t
d(on) - - - -  
22  
21  
20  
19  
18  
17  
16  
15  
75  
VCE = 400V  
I C = 30A  
60  
I C = 30A  
45  
I C = 15A  
30  
15  
I C = 15A  
0
0
10 20 30 40 50 60 70 80 90 100 110 120  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 20. Inductive Turn-on Switching Times  
vs. Collector Current  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
t r  
td(on)  
- - - -  
RG = 5ꢀ , VGE = 15V  
VCE = 400V  
TJ = 125ºC  
TJ = 25ºC  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
IC - Amperes  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS REF: G_36N60A3(55) 07-03-08-A  
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