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IXGT20N120B

型号：

IXGT20N120B

描述：

高压IGBT[ High Voltage IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

574 K

下载PDF手册
VCES  
IC25  
= 1200 V  
= 40 A  
IXGH 20N120B  
IXGT 20N120B  
High Voltage IGBT  
VCE(sat) = 3.4 V  
tfi(typ)  
= 160 ns  
Preliminary Data Sheet  
TO-268  
(IXGT)  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
1200  
1200  
V
V
G
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
E
C(TAB)  
TAB)  
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1 ms  
40  
20  
80  
A
A
A
TO-247 AD (IXGH)  
SSOA  
V
= 15 V, TVJ = 125°C, RG = 10 Ω  
I
= 80  
A
(RBSOA)  
CGlaE mped inductive load  
@ 0C.8M VCES  
190  
G
C
E
PC  
TC = 25°C  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate,  
C = Collector,  
TAB = Collector  
E = Emitter,  
Maximum Lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Maximum Tab temperature for soldering SMD devices for 10 s  
260  
°C  
Features  
z
High Voltage IGBT for resonant  
power supplies  
Md  
Mounting torque (M3) (TO-247)  
1.13/10Nm/lb.in.  
- Induction heating  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
- Rice cookers  
z
International standard packages  
JEDEC TO-268 surface and  
JEDEC TO-247 AD  
z
z
Low switching losses, low V(sat)  
MOS Gate turn-on  
- drive simplicity  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Advantages  
BVCES  
VGE(th)  
I
= 250 µA, VGE = 0 V  
1200  
2.5  
V
ICC = 250 µA, V = VGE  
5
V
z
High power density  
CE  
z
Suitable for surface mounting  
z
ICES  
VCE = VCES  
TJ = 25°C  
TJ = 125°C  
50  
µA  
Easy to mount with 1 screw,  
(isolated mounting screw hole)  
IGES  
VCE = 0 V, VGE = 20 V  
IC = 20A, VGE = 15 V  
100  
nA  
VCE(sat)  
2.9  
2.8  
3.4  
3.8  
V
V
© 2003 IXYS All rights reserved  
DS98986D(05/03)  
IXGH 20N120B  
IXGT 20N120B  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = 20A; VCE = 10 V,  
12  
18  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
∅ P  
Cies  
Coes  
Cres  
1700  
95  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
IC = 20A, VGE = 15 V, VCE = 0.5 VCES  
Inductive load, TJ = 25°C  
35  
Qg  
Qge  
Qgc  
72  
12  
27  
nC  
nC  
nC  
e
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A12  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
td(on)  
tri  
td(off)  
tfi  
25  
15  
150  
160  
2.1  
ns  
ns  
280 ns  
320 ns  
3.5 mJ  
A
b
b12  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
IC = 20 A, VGE = 15 V  
b
VCE = 0.8 VCES, RG = Roff = 10 Ω  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
Eoff  
20.80 21.46  
15.75 16.26  
td(on)  
tri  
Eon  
td(off)  
tfi  
25  
18  
0.9  
270  
360  
ns  
ns  
mJ  
ns  
ns  
e
5.20  
5.72 0.205 0.225  
L
19.81 20.32  
4.50  
.780 .800  
.177  
L1  
Inductive load, TJ = 125°C  
IC = 20A, VGE = 15 V  
VCE = 0.8 VCES, RG = Roff = 10 Ω  
∅P 3.55  
Q
R
S
3.65  
.140 .144  
5.89  
4.32  
6.15 BSC  
6.40 0.232 0.252  
5.49  
.170 .216  
242 BSC  
Eoff  
3.5  
mJ  
TO-268 Outline  
RthJC  
RthCK  
0.65 K/W  
K/W  
(TO-247)  
0.25  
Min Recommended Footprint  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
A
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
A1  
A2  
b
1.15  
1.9  
.4  
1.45  
.045 .057  
b2  
C
2.1  
.75  
.83  
.65  
.016 .026  
D
13.80 14.00  
.543 .551  
.624 .632  
.524 .535  
E
15.85 16.05  
E1  
13.3  
13.6  
e
H
L
5.45 BSC  
.215 BSC  
.736 .752  
.094 .106  
18.70 19.10  
2.40  
1.20  
2.70  
1.40  
L1  
.047 .055  
L2  
L3  
L4  
1.00  
1.15  
.039 .045  
.010 BSC  
0.25 BSC  
3.80  
4.10  
.150 .161  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGH 20N120B  
IXGT 20N120B  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
40  
35  
30  
25  
20  
15  
10  
5
16 0  
14 0  
12 0  
10 0  
80  
60  
40  
20  
0
VG E = 15V  
13 V  
VGE = 15V  
13V  
11V  
9V  
7V  
1 1V  
9V  
7V  
5V  
5V  
0
1
0.5  
3
1.5  
2
2.5  
3
3.5  
4
4.5  
5
0
2
4
6
8
10 12 14 16 18  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Temperature Dependence of VCE(sat)  
40  
35  
30  
25  
20  
15  
10  
5
1. 4  
1. 3  
1. 2  
1. 1  
1
VG E = 15V  
13V  
VG E = 15V  
I C = 40A  
11V  
9V  
7V  
5V  
I C = 20A  
0.9  
0.8  
0.7  
I C= 10A  
0 25 50 75 100 125 150  
0
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
-50 -25  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 6. Transconductance  
Fig. 5. Input Admittance  
80  
70  
60  
50  
40  
30  
20  
10  
27  
24  
21  
18  
15  
12  
9
TJ = -40ºC  
25ºC  
125ºC  
TJ= -40ºC  
25ºC  
6
125ºC  
3
0
0
4
5
6
7
8
9
10  
0
10  
20 30 40 50 60 70 80  
VGE - Volts  
I C - Amperes  
© 2003 IXYS All rights reserved  
IXGH 20N120B  
IXGT 20N120B  
Fig. 8. Dependence of Eoff on IC  
Fig. 7. Dependence of Eoff on RG  
14  
12  
10  
8
14  
12  
10  
8
TJ = 125ºC  
VG E = 15V  
VC E = 960V  
I C= 40A  
TJ = 125ºC  
VGE = 15V  
VCE = 960V  
I C= 20A  
R G= 56 Ohms  
6
R G = 5 Ohms  
6
4
4
2
I C= 10A  
0
2
0
10  
20  
30  
40  
50  
60  
10  
15  
20  
25  
30  
35  
40  
I C - Amperes  
R G - Ohms  
Fig. 9. Dependence of Eoff on Temperature  
Fig. 10. Gate Charge  
16  
14  
12  
10  
8
15  
12  
9
Solid lines - RG = 56 Ohms  
Dashed lines - RG = 5 Ohms  
VGE = 15V  
VCE = 600V  
I C= 20A  
I G= 10mA  
VCE = 960V  
I C = 40A  
I C = 20A  
6
6
4
3
2
I C = 10A  
0
0
0
10  
20 30  
40 50 60 70 80  
0
25  
50  
75  
100  
125  
150  
Q G - nanoCoulombs  
TJ - Degrees Centigrade  
Fig. 11. Capacitance  
Fig. 12. Reverse-Bias Safe Operating Area  
90  
10000  
1000  
10 0  
f = 1M Hz  
80  
70  
60  
50  
40  
30  
20  
10  
TJ = 125 C  
º
RG = 10 Ohms  
dV/dT < 10V/ns  
C
i es  
C
C
oes  
res  
10  
0
0
5
10  
15  
20 25 30 35 40  
100  
300  
500  
700  
900  
1100 1300  
VCE - Volts  
VCE - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGH 20N120B  
IXGT 20N120B  
F ig . 13. M aximu m Tran sien t Th ermal R esistan ce  
1
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2003 IXYS All rights reserved  
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