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IXGH120N30C3

型号：

IXGH120N30C3

描述：

GenX3 300V IGBT[ GenX3 300V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

123 K

下载PDF手册
Preliminary Technical Information  
GenX3TM 300V IGBT  
IXGH120N30C3  
VCES = 300V  
IC110 = 120A  
VCE(sat) ≤ 2.1V  
tfi(typ) = 86ns  
High speed PT IGBTs for  
50-150kHz switching  
TO-247 AD  
(IXGH)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
300  
300  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
C
E
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C (chip capability)  
TC = 25°C, 1ms  
75  
120  
600  
A
A
A
IA  
TC = 25°C  
TC = 25°C  
120  
850  
A
EAS  
mJ  
Features  
SSOA  
V
GE= 15V, TVJ = 125°C, RG = 2Ω  
ICM = 240  
A
z
High Frequency IGBT  
Square RBSOA  
High avalanche capability  
Drive simplicity with MOS Gate  
Turn-On  
(RBSOA)  
Clamped inductive load @ ≤ 300V  
TC = 25°C  
z
z
z
PC  
540  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z
High current handling capability  
TJM  
Tstg  
-55 ... +150  
Applications  
TL  
TSOLD  
Maximum lead temperature for soldering  
1.6mm (0.062 in.) from case for 10s  
300  
260  
°C  
°C  
z PFC Circuits  
z PDP Systems  
z Switched-mode and resonant-mode  
converters and inverters  
z SMPS  
Md  
Mounting torque  
1.13/10  
6
Nm/lb.in.  
g
Weight  
z AC motor speed control  
z DC servo and robot drives  
z DC choppers  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
300  
2.5  
V
V
5.0  
ICES  
VCE = VCES  
VGE = 0V  
50  
1.0  
μA  
TJ = 125°C  
TJ = 125°C  
mA  
IGES  
VCE = 0V, VGE = ±20V  
±100  
nA  
VCE(sat)  
IC = 120A, VGE = 15V  
1.75  
1.70  
2.10  
V
V
© 2008 IXYS CORPORATION, All rights reserved  
DS99850B(01/08)  
IXGH120N30C3  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 AD Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V,  
50  
83  
S
Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
∅ P  
Cies  
Coes  
Cres  
8700  
715  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
195  
Qg  
230  
32  
nC  
nC  
nC  
e
Qge  
Qgc  
IC = IC110, VGE = 15V, VCE = 0.5 • VCES  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
87  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
td(on)  
tri  
28  
37  
ns  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Inductive Load, TJ = 25°C  
IC = 60A, VGE = 15V  
Eon  
td(off)  
tfi  
0.23  
109  
86  
mJ  
160 ns  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
VCE = 200V, RG = 2Ω  
20.80 21.46  
15.75 16.26  
Eoff  
0.73  
1.3 mJ  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
td(on)  
tri  
28  
38  
ns  
ns  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
Inductive Load, TJ = 125°C  
IC = 60A, VGE = 15V  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Eon  
td(off)  
tfi  
0.37  
120  
113  
0.88  
mJ  
ns  
VCE = 200V, RG = 2Ω  
ns  
Eoff  
mJ  
RthJC  
RthCK  
0.23 °C/W  
°C/W  
0.21  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGH120N30C3  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
300  
250  
200  
150  
100  
50  
240  
220  
200  
180  
160  
140  
120  
100  
80  
V
= 15V  
11V  
V
= 15V  
GE  
GE  
13V  
11V  
9V  
7V  
9V  
7V  
60  
40  
5V  
5V  
20  
0
0
0
0
5
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
2.2 2.4  
0
1
2
3
4
5
6
7
8
9
125  
6.5  
10  
150  
7
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
240  
220  
200  
180  
160  
140  
120  
100  
80  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
V
= 15V  
GE  
V
= 15V  
GE  
13V  
11V  
I
= 240A  
C
9V  
7V  
I
I
= 120A  
= 60A  
C
C
60  
40  
5V  
20  
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
-50  
-25  
0
25  
50  
75  
100  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
160  
140  
120  
100  
80  
T
J
= 25ºC  
T
J
= 125ºC  
25ºC  
- 40ºC  
I
= 240A  
120A  
60A  
C
60  
40  
20  
0
6
7
8
9
10  
11  
12  
13  
14  
15  
3
3.5  
4
4.5  
5
5.5  
6
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH120N30C3  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
140  
120  
100  
80  
16  
14  
12  
10  
8
VCE = 150V  
IC = 120A  
IG = 10 mA  
T
J
= - 40ºC  
25ºC  
125ºC  
60  
6
40  
4
20  
2
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
40  
80  
120  
160  
200  
240  
350  
10  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
280  
240  
200  
160  
120  
80  
C
ies  
1,000  
C
C
oes  
res  
T
= 125ºC  
J
R
= 2  
dV / dT < 10V / ns  
40  
G
Ω
f = 1 MHz  
5
0
100  
50  
100  
150  
200  
250  
300  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGH120N30C3  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
Fig. 13. Inductive Swiching  
Energy Loss vs. Collector Current  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
E
R
E
on - - - -  
= 15V  
GE  
E
E
on - - - -  
= 15V  
GE  
off  
off  
= 2  
V
Ω ,  
G
T = 125ºC ,  
J
V
V
= 200V  
CE  
V
= 200V  
CE  
I
= 60A  
C
T = 125ºC  
J
I
= 30A  
C
T = 25ºC  
J
2
3
4
5
6
7
8
9
10  
30  
40  
50  
60  
70  
80  
90  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 14. Inductive Swiching  
Energy Loss vs. Junction Temperature  
150  
140  
130  
120  
110  
100  
90  
440  
1.2  
1
0.6  
t f  
td(off)  
- - - -  
E
R
E
on - - - -  
400  
360  
320  
280  
240  
200  
160  
120  
80  
off  
VGE  
T = 125ºC,  
J
= 15V  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
= 2  
VGE = 15V  
,
Ω
G
VCE  
= 200V  
V
CE = 200V  
0.8  
0.6  
0.4  
0.2  
0
IC = 60A  
I
= 60A  
C
I
= 30A  
C
80  
70  
I
= 30A  
C
60  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
2
3
4
5
6
7
8
9
10  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
160  
140  
120  
100  
80  
135  
120  
110  
100  
90  
140  
135  
130  
125  
120  
115  
110  
105  
100  
t f  
R
td(off)  
t f  
R
td(off)  
- - - -  
= 2 , VGE = 15V  
- - - -  
130  
125  
120  
115  
110  
105  
= 2 , V = 15V  
Ω
GE  
Ω
G
G
V
CE = 200V  
V
= 200V  
CE  
I
= 60A, 30A  
C
T = 125ºC  
J
80  
70  
60  
T = 25ºC  
J
60  
50  
40  
40  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
30  
40  
50  
60  
IC - Amperes  
70  
80  
90  
TJ - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH120N30C3  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
40  
38  
36  
34  
32  
30  
28  
26  
24  
22  
70  
60  
50  
40  
30  
20  
10  
35  
33  
31  
29  
27  
25  
23  
t r  
td(on)  
- - - -  
T = 125ºC, V = 15V  
t r  
R
td(on)  
- - - -  
= 2 , V = 15V  
J
GE  
Ω
G
GE  
V
= 200V  
CE  
V
= 200V  
CE  
I
= 60A  
C
I
= 30A  
T = 25ºC, 125ºC  
J
C
2
3
4
5
6
7
8
9
10  
30  
40  
50  
60  
IC - Amperes  
70  
80  
90  
RG - Ohms  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
45  
40  
35  
30  
25  
20  
15  
29  
28  
27  
26  
25  
24  
23  
I
= 60A  
C
t r  
R
td(on)  
- - - -  
= 2 , V = 15V  
Ω
G
GE  
V
= 200V  
CE  
I
= 30A  
C
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_120N30C3(76)7-13-07  
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