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IXGK120N60A3

型号：

IXGK120N60A3

描述：

GenX3 A3级的IGBT[ GenX3 A3-Class IGBTS ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

219 K

下载PDF手册
GenX3TM A3-Class  
IGBTS  
IXGK120N60A3  
IXGX120N60A3  
VCES = 600V  
IC110 = 120A  
VCE(sat) ≤ 1.35V  
Ultra-Low Vsat PT IGBTs for  
up to 5kHz Switching  
TO-264 (IXGK)  
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
Maximum Ratings  
600  
600  
±20  
±30  
V
V
V
V
VCGR  
G
C
)  
VGES  
E
VGEM  
Transient  
IC25  
TC = 25°C  
200  
120  
75  
A
A
A
A
PLUS 247TM (IXGX)  
IC110  
ILRMS  
ICM  
TC = 110°C  
Terminal Current Limit  
TC = 25°C, 1ms  
600  
SSOA  
(RBSOA)  
VGE= 15V, TVJ = 125°C, RG = 1.5Ω  
Clamped Inductive Load  
ICM = 200  
A
V
@ < 600  
G
C
E
(TAB)  
PC  
TC = 25°C  
780  
W
TJ  
TJM  
-55 ... +150  
150  
°C  
°C  
G = Gate  
C = Collector  
E
= Emitter  
Tstg  
-55 ... +150  
°C  
TAB = Collector  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
Features  
Md  
FC  
Mounting Torque ( IXGK )  
Mounting Force ( IXGX )  
1.13/10  
20..120/4.5..27  
Nm/lb.in.  
N/lb.  
z Optimized for Low Conduction Losses  
z Square RBSOA  
z High Current Handling Capability  
z International Standard Packages  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z High Power Density  
z Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VGE(th)  
ICES  
IC = 500μA, VCE = VGE  
3.0  
5.0  
V
Applications  
VCE = VCES, VGE = 0V  
50 μA  
TJ = 125°C  
1.25 mA  
z Power Inverters  
z UPS  
IGES  
VCE = 0V, VGE = ±20V  
±400 nA  
z Motor Drives  
VCE(sat)  
IC = 100A, VGE = 15V, Note 1  
1.20 1.35  
V
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
z Inrush Current Protection Circuits  
DS99964A(02/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGK120N60A3  
IXGX120N60A3  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 (IXGK) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
108  
14.8  
800  
140  
450  
67  
Max.  
gfs  
IC = 60A, VCE = 10 V, Note 1  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
65  
S
nF  
pF  
pF  
nC  
nC  
nC  
ns  
ns  
mJ  
ns  
ns  
Cies  
Coes  
Cres  
Qg(on)  
Qge  
Qgc  
td(on)  
tri  
IC = IC110, VGE = 15 V, VCE = 0.5 • VCES  
130  
39  
82  
Inductive load, TJ = 25°C  
IC = 100A, VGE = 15V  
Eon  
td(off)  
tfi  
2.7  
295  
260  
6.6  
VCE = 480V, RG = 1.5Ω  
Eoff  
td(on)  
tri  
mJ  
ns  
40  
83  
ns  
Inductive load, TJ = 125°C  
IC = 100A, VGE = 15V  
Eon  
td(off)  
tfi  
3.5  
mJ  
ns  
420  
410  
10.4  
VCE = 480V, RG = 1.5Ω  
ns  
Eoff  
RthJC  
RthCK  
mJ  
0.16 °C/W  
°C/W  
0.15  
PLUS 247TM (IXGX) Outline  
Note: 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
5.59  
6.20  
.220 0.244  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGK120N60A3  
IXGX120N60A3  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
200  
180  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
VGE = 15V  
11V  
9V  
VGE = 15V  
13V  
11V  
9V  
7V  
7V  
5V  
60  
40  
20  
5V  
0
0
0.0  
0.0  
5
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
1.8  
15  
0
1
2
3
4
5
6
7
8
150  
7.5  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
200  
180  
160  
140  
120  
100  
80  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
13V  
11V  
VGE = 15V  
9V  
I C = 200A  
7V  
5V  
I C = 100A  
I C = 50A  
60  
40  
20  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
-50  
-25  
0
25  
50  
75  
100  
125  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
TJ = 25ºC  
TJ = - 40ºC  
25ºC  
125ºC  
I C = 200A  
100A  
50A  
60  
40  
20  
0
6
7
8
9
10  
11  
12  
13  
14  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGK120N60A3  
IXGX120N60A3  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
200  
180  
160  
140  
120  
100  
80  
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I C = 120A  
I
G = 10mA  
25ºC  
125ºC  
6
60  
4
40  
2
20  
0
0
0
50  
100 150 200 250 300 350 400 450 500  
QG - NanoCoulombs  
0
20  
40  
60  
80 100 120 140 160 180 200 220  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
220  
200  
180  
160  
140  
120  
100  
80  
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
60  
RG = 1.5Ω  
dV / dt < 10V / ns  
40  
C
res  
20  
0
100 150 200 250 300 350 400 450 500 550 600 650  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_120N60A3(86)02-11-09-B  
IXGK120N60A3  
IXGX120N60A3  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
Fig. 13. Inductive Switching  
Energy Loss vs. Collector Current  
12  
11  
10  
9
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
12  
11  
10  
9
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
E
E
on - - - -  
VGE = 15V  
off  
RG = 1.5  
Ω ,  
VCE = 480V  
I C = 100A  
8
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
VCE = 480V  
8
7
TJ = 125ºC  
6
7
5
TJ = 25ºC  
6
I C = 50A  
4
5
3
4
2
1
3
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
475  
450  
425  
400  
375  
350  
325  
300  
1000  
900  
800  
700  
600  
500  
400  
300  
12  
11  
10  
9
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
E
E
on - - - -  
RG = 1.5Ω VGE = 15V  
t f  
TJ = 125ºC, GE = 15V  
td(off)  
- - - -  
V
off  
,
VCE = 480V  
CE = 480V  
V
8
I C = 100A  
7
I C = 100A  
6
I C = 50A  
5
4
3
I C = 50A  
2
1
1
2
3
4
5
6
7
8
9
10  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
500  
475  
450  
425  
400  
375  
350  
325  
300  
275  
250  
225  
500  
475  
450  
425  
400  
375  
350  
325  
300  
275  
250  
225  
450  
425  
400  
375  
350  
325  
300  
275  
250  
225  
475  
450  
425  
400  
375  
350  
325  
300  
275  
250  
tf  
td(off)  
- - - -  
RG = 1.5Ω , VGE = 15V  
TJ = 125ºC  
VCE = 480V  
I C = 100A, 50A  
t f  
td(off) - - - -  
RG = 1.5Ω , VGE = 15V  
VCE = 480V  
TJ = 25ºC  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95 100  
TJ - Degrees Centigrade  
IC - Amperes  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGK120N60A3  
IXGX120N60A3  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
160  
140  
120  
100  
80  
90  
80  
70  
60  
50  
40  
30  
20  
tr  
td(on)  
- - - -  
RG = 1.5Ω , VGE = 15V  
tr  
TJ = 125ºC, VGE = 15V  
td(on) - - - -  
I C = 100A  
VCE = 480V  
VCE = 480V  
TJ = 25ºC, 125ºC  
I C = 50A  
60  
40  
20  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95 100  
1
2
3
4
5
6
7
8
9
10  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
48  
46  
44  
42  
40  
38  
36  
34  
32  
30  
tr  
RG = 1.5Ω , VGE = 15V  
td(on) - - - -  
VCE = 480V  
I C = 100A  
I C = 50A  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_120N60A3(86)02-11-09-B  
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