IXGH 40N60C
IXGT 40N60C
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = I ; V = 10 V,
30
40
S
Pulse Cte11s0t, tC≤E 300 µs, duty cycle ≤ 2 %
P
Cies
Coes
Cres
3300
310
65
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC110, VGE = 15 V, VCE = 0.5 VCES
Qg
Qge
Qgc
116
23
55
nC
nC
nC
e
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
td(on)
tri
td(off)
tfi
Inductive load, TJ = 25°C
25
30
100
75
ns
ns
150 ns
150 ns
1.7 mJ
IC = IC110, VGE = 15 V
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
Remarks: Switching times may
increase for V (Clamp) > 0.8 • VCES
higher TJ or inCcEreased RG
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
,
,
20.80 21.46
15.75 16.26
Eoff
0.85
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
td(on)
tri
Eon
td(off)
tfi
25
35
0.40
50
105
1.2
ns
ns
mJ
ns
ns
mJ
.780 .800
.177
Inductive load, TJ = 125°C
IC = IC110, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
P
3.55
5.89
3.65
.140 .144
Q
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Remarks: Switching times may
increase for V (Clamp) > 0.8 • VCES
higher TJ or inCcEreased RG
Eoff
TO-268 Outline
RthJC
RthCK
0.50 K/W
K/W
(IXGH40N60C)
0.25
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
