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2SK2394_12

型号:

2SK2394_12

描述:

N沟道结硅FET低噪声高频功率放大器呃应用[ N-Channel Junction Silicon FET Low-Noise HF Amplifi er Applications ]

品牌:

SANYO[ SANYO SEMICON DEVICE ]

页数:

6 页

PDF大小:

398 K

Ordering number : EN4839B  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Junction Silicon FET  
2SK2394  
Low-Noise HF Amplier Applications  
Applications  
AM tuner RF amplier  
Low-noise amplier  
Features  
Large yfs  
Small Ciss  
|
|
Small-sized package permitting 2SK2394-applied sets to be made small slim  
Ultralow noise gure  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Drain Voltage  
Gate Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
15  
--15  
10  
DSX  
V
V
GDS  
I
mA  
mA  
mW  
°C  
G
Drain Current  
I
50  
D
Allowable Power Dissipation  
Junction Temperature  
Storage Temperature  
P
200  
150  
D
Tj  
Tstg  
--55 to +150  
°C  
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package  
: CP  
7013A-011  
• JEITA, JEDEC  
: SC-59, TO-236, SOT-23, TO-236AB  
Minimum Packing Quantity : 3,000 pcs./reel  
2.9  
0.1  
2SK2394-6-TB-E  
2SK2394-7-TB-E  
3
Packing Type: TB  
Marking  
YJ  
TB  
1
2
0.95  
0.4  
1 : Source  
2 : Drain  
3 : Gate  
Electrical Connection  
3
SANYO : CP  
1
2
http://www.sanyosemi.com/en/network/  
90512 TKIM/22299TS/73094MT (KOTO) BX-1128  
No.4839-1/6  
2SK2394  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
=--10 A, V =0V  
Unit  
min  
--15  
max  
Gate-to-Drain Breakdown Voltage  
Gate Cutoff Current  
Cutoff Voltage  
V
I
V
nA  
V
μ
(BR)GDS  
G
DS  
I
V
=--10V, V =0V  
--1.0  
GSS  
(off)  
GS  
DS  
=5V, I =100  
V
V
A
--0.3  
6.0*  
20  
--0.7  
--1.5  
μ
GS  
DS  
D
Drain Current  
I
V
=5V, V =0V  
DS GS  
32.0*  
mA  
mS  
pF  
pF  
dB  
DSS  
yfs  
Forward Transfer Admittance  
Input Capacitance  
V
=5V, V =0V, f=1kHz  
GS  
38  
10.0  
2.9  
|
|
DS  
Ciss  
Crss  
NF  
V
=5V, V =0V, f=1MHz  
GS  
DS  
Reverse Transfer Capacitance  
Noise Figure  
V
=5V, R =1k , I =1mA, f=1kHz  
1.0  
Ω
DS  
g
D
: The 2SK2394 is classied by I  
as follows : (unit : mA)  
*
DSS  
Rank  
5
6
7
I
6.0 to 12.0  
10.0 to 20.0  
16.0 to 32.0  
DSS  
Ordering Information  
Device  
2SK2394-6-TB-E  
2SK2394-7-TB-E  
Package  
Shipping  
memo  
CP  
CP  
3,000pcs./reel  
3,000pcs./reel  
Pb Free  
I
D
-- V  
DS  
I -- V  
D DS  
20  
16  
12  
8
20  
16  
12  
8
4
0
4
0
0
0
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2
4
6
8
10  
12  
Drain-to-Source Voltage, V  
-- V ITR02749  
Drain-to-Source Voltage, V  
-- V ITR02750  
DS  
DS  
I
D
-- V  
I -- V  
D GS  
GS  
22  
20  
18  
16  
14  
12  
10  
8
16  
V
=5V  
=15mA  
V
=5V  
DS  
DS  
I
DSS  
14  
12  
10  
8
6
6
4
2
0
4
2
0
--1.4  
--1.2  
--1.0  
--0.8  
--0.6  
--0.4  
--0.2  
0
0.2  
--1.2  
--1.0  
--0.8  
--0.6  
--0.4  
--0.2  
0
0.2  
ITR02751  
Gate-to-Source Voltage, V  
-- V  
GS  
ITR02752  
Gate-to-Source Voltage, V  
-- V  
GS  
No.4839-2/6  
2SK2394  
| yfs | -- I  
| yfs | -- I  
D
DSS  
7
5
100  
V
V
=5V  
=0V  
V
=5V  
DS  
GS  
DS  
f=1kHz  
7
f=1kHz  
3
2
5
3
2
10  
7
5
3
2
10  
3
5
7
2
3
5
7
2
3
5
3
5
7
2
3
5
ITR02754  
1.0  
10  
10  
Drain Current, I -- mA  
Drain Current, I -- mA  
ITR02753  
D
DSS  
V
GS  
(off) -- I  
Ciss -- V  
DS  
DSS  
2
3
2
V
=5V  
=100μA  
V
=0V  
GS  
DS  
I
f=1MHz  
D
1.0  
10  
7
5
7
5
3
2
3
2
0.1  
1.0  
7
3
5
7
2
3
5
7
2
3
5
7
2
3
10  
1.0  
10  
Drain Current, I  
-- mA  
Drain-to-Source Voltage, V  
-- V  
ITR02755  
ITR02756  
DSS  
DS  
NF -- f  
Crss -- V  
DS  
10  
10  
8
V
=0V  
V
=5V  
=1mA  
DS  
DS  
f=1MHz  
I
7
D
Rg=1kΩ  
5
6
3
2
4
1.0  
2
0
7
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7  
1.0  
10  
0.01  
0.1  
1.0  
10  
100  
ITR02758  
Drain-to-Source Voltage, V  
-- V ITR02757  
Frequency, f -- kHz  
DS  
NF -- Rg  
P
-- Ta  
D
10  
8
240  
V
=5V  
DS  
=1mA  
I
D
200  
160  
120  
80  
f=1kHz  
6
4
2
0
40  
0
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
0
20  
40  
60  
80  
100  
120  
140  
160  
0.1  
1.0  
10  
100  
1000  
ITR02759  
ITR02760  
Ambient Temperature, Ta -- °C  
Signal Source Resistance, Rg -- kΩ  
No.4839-3/6  
2SK2394  
Embossed Taping Specication  
2SK2394-6-TB-E, 2SK2394-7-TB-E  
No.4839-4/6  
2SK2394  
Outline Drawing  
Land Pattern Example  
2SK2394-6-TB-E, 2SK2394-7-TB-E  
Mass (g) Unit  
Unit: mm  
0.013  
mm  
* For reference  
0.8  
0.95  
0.95  
No.4839-5/6  
2SK2394  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment. The products mentioned herein  
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,  
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal  
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten  
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they  
grant any guarantee thereof. If you should intend to use our products for new introduction or other application  
different from current conditions on the usage of automotive device, communication device, office equipment,  
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)  
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be  
solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are  
not guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an  
independent device, the customer should always evaluate and test devices mounted in the customer's  
products or equipment.  
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using  
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating  
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
Co.,Ltd. products described or contained herein.  
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,  
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute  
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a  
confirmation.  
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all  
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures  
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give  
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,  
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but  
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and  
structural design.  
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are  
controlled under any of applicable local export control laws and regulations, such products may require the  
export license from the authorities concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system, or  
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the  
SANYO Semiconductor Co.,Ltd. product that you intend to use.  
Upon using the technical information or products described herein, neither warranty nor license shall be  
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any  
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third  
party's intellectual property rights which has resulted from the use of the technical information and products  
mentioned above.  
This catalog provides information as of September, 2012. Specications and information herein are subject  
to change without notice.  
PS No.4839-6/6  
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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