FUJI POWER MOSFET
2SK3502-01MR
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
TO-220F
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
600
Unit
V
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Equivalent circuit schematic
A
ID
±10
±40
±30
10
A
ID(puls]
VGS
V
Drain(D)
A
IAR *2
mJ
kV/µs
kV/µs
W
EAS*1
dVDS/dt *4
dV/dt *3
PD Ta=25
Tc=25
Tch
217
20
5
Gate(G)
°C
°C
2.16
Source(S)
50
+150
-55 to +150
Operating and storage
temperature range
°C
°C
Tstg
<
<
<
<
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
*1 L=3.99mH, Vcc=60V *2 Tch 150°C
=
=
=
=
<
*4 VDS 600V
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
Test Conditions
Drain-source breakdown voltaget
Gate threshold voltage
600
V
ID=1mA
VGS=0V
µ
3.0
5.0
25
V
ID= 250 A
VDS=VGS
µA
Tch=25°C
VDS=600V VGS=0V
Zero gate voltage drain current
IDSS
250
100
Tch=125°C
VDS=480V VGS=0V
VGS=±30V
VDS=0V
ID=5A VGS=10V
IGSS
RDS(on)
gfs
10
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
0.58
0.75
Ω
4
8
1200
140
6
S
ID=5A VDS=25V
Ciss
1800
210
9
pF
VDS=25V
Coss
Crss
td(on)
tr
Output capacitance
VGS=0V
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=300V ID=5A
ns
17
26
15
23
VGS=10V
35
53
td(off)
tf
Turn-off time toff
RGS=10 Ω
7
11
30
45
QG
nC
Total Gate Charge
VCC=250V
ID=10A
11
16.5
15
QGS
QGD
IAV
Gate-Source Charge
Gate-Drain Charge
10
VGS=10V
10
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
L=3.99mH Tch=25°C
1.00
1.50
VSD
trr
Qrr
V
IF=10A VGS=0V Tch=25°C
IF=10A VGS=0V
-di/dt=100A/µs
Tch=25°C
0.75
5.0
µs
µC
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
2.5
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
58.0
°C/W
1
