2SK2120
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit Test conditions
———————————————————————————————————————————
Drain to source breakdown
V
60
—
—
V
I
= 10 mA, V
= 0
(BR)DSS
D
GS
voltage
———————————————————————————————————————————
Gate to source breakdown
V
±20
—
—
V
I
= ±200 µA, V
= 0
(BR)GSS
G
DS
voltage
———————————————————————————————————————————
Gate to source leak current
I
—
—
±10
µA
V
= ±16 V, V
= 0
GSS
GS
DS
———————————————————————————————————————————
Zero gate voltage drain current
I
—
—
250
µA
V
= 50 V, V
= 0
DSS
DS
GS
———————————————————————————————————————————
Gate to source cutoff voltage
———————————————————————————————————————————
V
1.0
—
2.25
V
I
= 1 mA, V
= 10 V
GS(off)
D
DS
Static drain to source on state
R
—
0.018
0.022
Ω
I = 20 A
DS(on)
D
resistance
V
= 10 V *
GS
————————————————————————
—
0.023
0.028
Ω
I = 20 A
D
V
= 4 V *
GS
———————————————————————————————————————————
Forward transfer admittance
|y |
22
35
—
S
I = 20 A
fs
D
V
= 10 V *
DS
———————————————————————————————————————————
Input capacitance
Ciss
—
3530
—
pF
V
= 10 V
DS
————————————————————————————————
Output capacitance
Coss
—
1480
—
pF
V
= 0
GS
————————————————————————————————
Reverse transfer capacitance
Crss
—
300
—
pF
f = 1 MHz
———————————————————————————————————————————
Turn–on delay time
t
—
33
—
ns
I = 20 A
d(on)
D
————————————————————————————————
Rise time
t
—
155
—
ns
V
= 10 V
r
GS
————————————————————————————————
Turn–off delay time
t
—
450
—
ns
R = 1.5 Ω
L
d(off)
————————————————————————————————
Fall time
t
—
220
—
ns
f
———————————————————————————————————————————
Body–drain diode forward
V
—
1.2
—
V
I = 40 A, V
= 0
DF
F
GS
voltage
———————————————————————————————————————————
Body–drain diode reverse
recovery time
t
—
120
—
ns
I
= 40 A, V
= 0,
rr
GS
F
diF / dt = 50 A / µs
———————————————————————————————————————————
* Pulse Test
■ See characteristic curve of 2SK1911.
