Power F-MOS FETs
2SK2122
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed: EAS > 3.2mJ
● High-speed switching: tf = 50ns
● No secondary breakdown
unit: mm
4.6±0.2
9.9±0.3
2.9±0.2
φ3.2±0.1
■ Applications
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
2.6±0.1
1.2±0.15
0.7±0.1
1.45±0.15
● Switching power supply
0.75±0.1
■ Absolute Maximum Ratings (TC = 25°C)
2.54±0.2
5.08±0.4
Parameter
Symbol
Ratings
Unit
V
Drain to Source breakdown voltage VDSS
250
1
2 3
7
Gate to Source voltage
DC
Pulse
Avalanche energy capacity
VGSS
ID
±20
V
1: Gate
2: Drain
3: Source
±8
A
Drain current
TO-220E Package
IDP
±16
A
EAS*
3.2
mJ
Allowable power
dissipation
TC = 25°C
Ta = 25°C
40
PD
W
2
Channel temperature
Storage temperature
Tch
150
°C
°C
Tstg
−55 to +150
*
L = 0.1mH, IL = 8A, VDD = 50V, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
IDSS
Conditions
VDS = 200V, VGS = 0
VGS = ±20V, VDS = 0
ID = 1mA, VGS = 0
min
typ
max
Unit
mA
µA
V
Drain to Source cut-off current
Gate to Source leakage current
0.1
±1
IGSS
Drain to Source breakdown voltage VDSS
250
2
Gate threshold voltage
Vth
VDS = 10V, ID = 1mA
5
V
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
RDS(on)
| Yfs |
VDSF
VGS = 10V, ID = 5A
VDS = 10V, ID = 5A
0.4
4.7
0.6
Ω
2.7
S
IDR = 8A, VGS = 0
−1.7
V
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
1100
200
60
pF
pF
pF
ns
VDS = 10V, VGS = 0, f = 1MHz
Turn-on time (delay time)
Rise time
td(on)
tr
20
VGS = 10V, ID = 5A
20
ns
Fall time
tf
VDD = 100V, RL = 20Ω
30
ns
Turn-off time (delay time)
Thermal resistance between channel and case
td(off)
Rth(ch-c)
130
ns
3.125
°C/W
1
