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2SK2175

型号:

2SK2175

描述:

晶体管| MOSFET | N沟道| 60V V( BR ) DSS | 15A I( D) | TO- 220AB\n[ TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-220AB ]

品牌:

ETC[ ETC ]

页数:

9 页

PDF大小:

105 K

2SK2175  
Silicon N-Channel MOS FET  
November 1996  
Application  
High speed power switching  
Features  
Low on-resistance  
High speed switching  
Low drive current  
4 V gate drive device can be driven from 5 V source  
Suitable for Switching regulator, DC-DC converter  
Avalanche ratings  
Outline  
TO-220AB  
1
D
2
3
1. Gate  
2. Drain  
G
(Flange)  
3. Source  
S
2SK2175  
Absolute Maximum Ratings  
°
(Ta = 25 C)  
Item  
Symbol  
VDSS  
Ratings  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
60  
VGSS  
±20  
V
ID  
15  
A
1
Drain peak current  
ID(pulse)  
IDR  
IAP*3  
EAR*3  
*
60  
A
Body to drain diode reverse drain current  
Avalanche current  
15  
A
10  
A
Avalanche energy  
8.5  
mJ  
W
°C  
°C  
Channel dissipation  
Pch*2  
30  
Channel temperature  
Storage temperature  
Tch  
150  
Tstg  
–55 to +150  
Notes 1. PW 10 µs, duty cycle 1 %  
2. Value at Tc = 25 °C  
3. Value at Tch = 25 °C, Rg 50 Ω  
2
2SK2175  
Electrical Characteristics  
°
(Ta = 25 C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test conditions  
Drain to source breakdown  
voltage  
V(BR)DSS  
V(BR)GSS  
IGSS  
60  
V
ID = 10 mA, VGS = 0  
Gate to source breakdown  
voltage  
±20  
V
IG = ±100 µA, VDS = 0  
Gate to source leak current  
1.0  
±10  
250  
2.25  
0.13  
µA  
µA  
V
VGS = ±16 V, VDS = 0  
VDS = 50 V, VGS = 0  
ID = 1 mA, VDS = 10 V  
Zero gate voltage drain current IDSS  
Gate to source cutoff voltage VGS(off)  
Static drain to source on state RDS(on)  
resistance  
0.10  
ID = 8 A  
VGS = 10 V*1  
0.13  
8
0.18  
ID = 8 A  
VGS = 4 V*1  
Forward transfer admittance  
Input capacitance  
|yfs|  
4.5  
S
ID = 8 A  
VDS = 10 V*1  
Ciss  
390  
pF  
VDS = 10 V  
VGS = 0  
f = 1 MHz  
Output capacitance  
Coss  
190  
45  
pF  
pF  
ns  
Reverse transfer capacitance Crss  
Turn-on delay time  
td(on)  
10  
ID = 8 A  
VGS = 10 V  
RL = 3.75 Ω  
Rise time  
tr  
65  
90  
90  
1.3  
ns  
ns  
ns  
V
Turn-off delay time  
Fall time  
td(off)  
tf  
Body to drain diode forward  
voltage  
VDF  
IF = 15 A, VGS = 0  
Body to drain diode reverse  
recovery time  
trr  
90  
ns  
IF = 15 A, VGS = 0,  
diF / dt = 50 A / µs  
Note 1. Pulse Test  
3
2SK2175  
4
2SK2175  
5
2SK2175  
6
2SK2175  
Avalanche Test Circuit and Waveform  
1
V
DSS  
– V  
2
E
=
• L • I  
AP  
AR  
V
DSS  
DD  
2
L
V
DS  
Monitor  
I
AP  
V
(BR)DSS  
Monitor  
I
AP  
Rg  
V
V
DD  
D. U. T  
DS  
I
D
Vin  
15 V  
50Ω  
V
DD  
0
7
2SK2175  
Normalized Transient Thermal Impedance vs. Pulse Width  
3
1
Tc = 25°C  
D = 1  
0.5  
0.3  
0.1  
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c  
ch – c = 4.16 °C/W, Tc = 25 °C  
PW  
T
P
DM  
D =  
0.03  
0.01  
PW  
T
10 µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
Pulse Width PW (S)  
Switching Time Test Circuit  
Waveform  
Vout  
Monitor  
Vin Monitor  
D.U.T.  
90%  
R
L
10%  
10%  
90%  
Vin  
V
DD  
= 30 V  
Vin  
10 V  
Vout  
10%  
50Ω  
90%  
td(off)  
td(on)  
t
f
tr  
8
2SK2175  
Notice  
When using this document, keep the following in mind:  
1. This document may, wholly or partially, be subject to change without notice.  
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or  
part of this document without Hitachi’s permission.  
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or  
any other reasons during operation of the user’s unit according to this document.  
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and  
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any  
intellectual property claims or other problems that may result from applications based on the examples  
described herein.  
5. No license is granted by implication or otherwise under any patents or other rights of any third  
party or Hitachi, Ltd.  
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL  
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.  
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are  
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL  
APPLICATIONS.  
9
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PANASONIC

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