Power F-MOS FETs
2SK2326
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed
● High-speed switching
● Low ON-resistance
unit: mm
4.6±0.2
● No secondary breakdown
9.9±0.3
2.9±0.2
φ3.2±0.1
■ Applications
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
2.6±0.1
1.2±0.15
0.7±0.1
1.45±0.15
● Switching power supply
0.75±0.1
■ Absolute Maximum Ratings (TC = 25°C)
2.54±0.2
5.08±0.4
Parameter
Symbol
Ratings
Unit
V
Drain to Source breakdown voltage VDSS
600
1
2 3
7
Gate to Source voltage
DC
Pulse
Avalanche energy capacity
VGSS
ID
±30
V
1: Gate
2: Drain
3: Source
±5
A
Drain current
IDP
±10
A
TO-220E Package
EAS*
62.5
mJ
Allowable power
dissipation
TC = 25°C
Ta = 25°C
50
PD
W
2
Channel temperature
Storage temperature
Tch
150
°C
°C
Tstg
−55 to +150
*
L = 5mH, IL = 5A, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
IDSS
Conditions
min
typ
max
Unit
µA
µA
V
Drain to Source cut-off current
Gate to Source leakage current
VDS = 480V, VGS = 0
100
±1
IGSS
VGS = ±30V, VDS = 0
Drain to Source breakdown voltage VDSS
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 3A
VDS = 25V, ID = 3A
IDR = 5A, VGS = 0
600
2
Gate threshold voltage
Vth
5
V
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
RDS(on)
| Yfs |
VDSF
1
1.5
Ω
1.7
2.8
S
−1.6
V
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
1300
130
40
pF
pF
pF
ns
VDS = 20V, VGS = 0, f = 1MHz
Turn-on time (delay time)
Rise time
td(on)
tr
20
VDD = 200V, ID = 3A
35
ns
Fall time
tf
VGS = 10V, RL = 66.6Ω
50
ns
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
td(off)
Rth(ch-c)
Rth(ch-a)
150
ns
2.5
°C/W
°C/W
62.5
1
