Power F-MOS FETs
2SK2327
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed
● High-speed switching
● Low ON-resistance
unit: mm
15.5±0.5
3.0±0.3
5˚
● No secondary breakdown
φ3.2±0.1
■ Applications
5˚
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
5˚
5˚
5˚
4.0
2.0±0.2
1.1±0.1
● Switching power supply
0.7±0.1
■ Absolute Maximum Ratings (TC = 25°C)
5.45±0.3
5.45±0.3
Parameter
Symbol
Ratings
600
Unit
V
5˚
Drain to Source breakdown voltage VDSS
Gate to Source voltage
DC
Pulse
Avalanche energy capacity
VGSS
ID
±30
V
1: Gate
2: Drain
3: Source
1
2
3
±10
A
Drain current
IDP
±20
A
TOP-3E Package
EAS*
100
mJ
Allowable power
dissipation
TC = 25°C
Ta = 25°C
100
PD
W
3
Channel temperature
Storage temperature
Tch
150
°C
°C
Tstg
−55 to +150
*
L = 2mH, IL = 10A, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
IDSS
Conditions
min
typ
max
Unit
µA
µA
V
Drain to Source cut-off current
Gate to Source leakage current
VDS = 480V, VGS = 0
100
±1
IGSS
VGS = ±30V, VDS = 0
Drain to Source breakdown voltage VDSS
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 5A
VDS = 25V, ID = 5A
IDR = 10A, VGS = 0
600
2
Gate threshold voltage
Vth
5
V
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
RDS(on)
| Yfs |
VDSF
0.6
6
0.75
Ω
3.6
S
−1.7
V
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
2000
210
70
pF
pF
pF
ns
VDS = 20V, VGS = 0, f = 1MHz
Turn-on time (delay time)
Rise time
td(on)
tr
30
VDD = 200V, ID = 5A
40
ns
Fall time
tf
VGS = 10V, RL = 40Ω
60
ns
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
td(off)
Rth(ch-c)
Rth(ch-a)
195
ns
1.25
°C/W
°C/W
41.67
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