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2SK2330S

型号：

2SK2330S

品牌：

ETC[ ETC ]

页数：

9 页

PDF大小：

56 K

下载PDF手册
2SK2330 L , 2SK2330 S  
Silicon N Channel MOS FET  
Application  
HDPAK  
4
High speed power switching  
4
Features  
1
2
3
• Low on–resistance  
2, 4  
• High speed switching  
• No secondary breakdown  
• Suitable for Switching regulator, DC – DC  
converter  
1
1
2
3
1. Gate  
2. Drain  
3. Source  
4. Drain  
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Ratings  
Unit  
———————————————————————————————————————————  
Drain to source voltage  
V
500  
V
DSS  
———————————————————————————————————————————  
Gate to source voltage  
V
±30  
V
GSS  
———————————————————————————————————————————  
Drain current  
I
15  
A
D
———————————————————————————————————————————  
Drain peak current  
I
*
60  
A
D(pulse)  
———————————————————————————————————————————  
Body–drain diode reverse drain current  
I
15  
A
DR  
———————————————————————————————————————————  
Channel dissipation  
Pch**  
100  
W
———————————————————————————————————————————  
Channel temperature  
Tch  
150  
°C  
———————————————————————————————————————————  
Storage temperature  
Tstg  
–55 to +150  
°C  
———————————————————————————————————————————  
PW ≤ 10 µs, duty cycle ≤ 1 %  
** Value at Tc = 25 °C  
*
2SK2330 L , 2SK2330 S  
Table 2 Electrical Characteristics (Ta = 25°C)  
Item  
Symbol  
Min  
Typ  
Max  
Unit Test conditions  
———————————————————————————————————————————  
Drain to source breakdown  
V
500  
—
—
V
I
= 10 mA, V  
= 0  
(BR)DSS  
D
GS  
voltage  
———————————————————————————————————————————  
Gate to source breakdown  
V
±30  
—
—
V
I
= ±100 µA, V  
= 0  
(BR)GSS  
G
DS  
voltage  
———————————————————————————————————————————  
Gate to source leak current  
I
—
—
±10  
µA  
V
= ±25 V, V  
= 0  
GSS  
GS  
DS  
———————————————————————————————————————————  
Zero gate voltage drain current  
I
—
—
250  
µA  
V
= 400 V, V  
= 0  
DSS  
DS  
GS  
———————————————————————————————————————————  
Gate to source cutoff voltage  
———————————————————————————————————————————  
V
2.0  
—
3.0  
V
I
= 1 mA, V  
= 10 V  
GS(off)  
D
DS  
Static drain to source on state  
R
—
0.3  
0.4  
Ω
I = 8 A  
DS(on)  
D
resistance  
V
= 10 V *  
GS  
———————————————————————————————————————————  
Forward transfer admittance  
|y |  
8
13  
—
S
I = 8 A  
fs  
D
V
= 10 V *  
DS  
———————————————————————————————————————————  
Input capacitance  
Ciss  
—
2050  
—
pF  
V
= 10 V  
DS  
————————————————————————————————  
Output capacitance  
Coss  
—
600  
—
pF  
V
= 0  
GS  
————————————————————————————————  
Reverse transfer capacitance  
Crss  
—
75  
—
pF  
f = 1 MHz  
———————————————————————————————————————————  
Turn–on delay time  
t
—
30  
—
ns  
I = 8 A  
d(on)  
D
————————————————————————————————  
Rise time  
t
—
110  
—
ns  
V
= 10 V  
r
GS  
————————————————————————————————  
Turn–off delay time  
t
—
150  
—
ns  
R = 3.75 Ω  
L
d(off)  
————————————————————————————————  
Fall time  
t
—
70  
—
ns  
f
———————————————————————————————————————————  
Body–drain diode forward  
V
—
1.0  
—
V
I = 15 A, V  
= 0  
DF  
F
GS  
voltage  
———————————————————————————————————————————  
Body–drain diode reverse  
recovery time  
t
—
500  
—
µs  
I
= 15 A, V  
= 0,  
rr  
GS  
F
diF / dt = 100 A / µs  
———————————————————————————————————————————  
* Pulse Test  
See characteristic curves of 2SK1168.  
2SK2334 L , 2SK2334 S  
Silicon N Channel MOS FET  
Application  
DPAK–2  
4
High speed power switching  
4
3
Features  
1
2
• Low on–resistance  
2, 4  
• High speed switching  
• Low drive current  
1
2
3
• 4 V gate drive device can be driven from  
5 V source  
• Suitable for Switching regulator, DC – DC  
converter  
1
1. Gate  
2. Drain  
3. Source  
4. Drain  
• Avalanche Ratings  
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Ratings  
Unit  
———————————————————————————————————————————  
Drain to source voltage  
V
60  
V
DSS  
———————————————————————————————————————————  
Gate to source voltage  
V
±20  
V
GSS  
———————————————————————————————————————————  
Drain current  
I
20  
A
D
———————————————————————————————————————————  
Drain peak current  
I
*
80  
A
D(pulse)  
———————————————————————————————————————————  
Body–drain diode reverse drain current  
I
20  
A
DR  
———————————————————————————————————————————  
Avalanche current  
I
***  
20  
A
AP  
———————————————————————————————————————————  
Avalanche energy  
E
***  
34  
mJ  
AR  
———————————————————————————————————————————  
Channel dissipation  
Pch**  
30  
W
———————————————————————————————————————————  
Channel temperature  
Tch  
150  
°C  
———————————————————————————————————————————  
Storage temperature  
Tstg  
–55 to +150  
°C  
———————————————————————————————————————————  
PW ≤ 10 µs, duty cycle ≤ 1 %  
*
** Value at Tc = 25 °C  
*** Value at Tch = 25 °C, Rg ≥ 50 Ω  
2SK2334 L , 2SK2334 S  
Table 2 Electrical Characteristics (Ta = 25°C)  
Item  
Symbol  
Min  
Typ  
Max  
Unit Test conditions  
———————————————————————————————————————————  
Drain to source breakdown  
V
60  
—
—
V
I
= 10 mA, V  
= 0  
(BR)DSS  
D
GS  
voltage  
———————————————————————————————————————————  
Gate to source breakdown  
V
±20  
—
—
V
I
= ±100 µA, V  
= 0  
(BR)GSS  
G
DS  
voltage  
———————————————————————————————————————————  
Gate to source leak current  
I
—
—
±10  
µA  
V
= ±16 V, V  
= 0  
GSS  
GS  
DS  
———————————————————————————————————————————  
Zero gate voltage drain current  
I
—
—
100  
µA  
V
= 50 V, V  
= 0  
DSS  
DS  
GS  
———————————————————————————————————————————  
Gate to source cutoff voltage  
———————————————————————————————————————————  
V
1.0  
—
2.25  
V
I
= 1 mA, V  
= 10 V  
GS(off)  
D
DS  
Static drain to source on state  
R
—
0.04  
0.055  
Ω
I = 10 A  
DS(on)  
D
resistance  
V
= 10 V *  
GS  
————————————————————————  
—
0.055  
0.07  
Ω
I = 10 A  
D
V
= 4 V *  
GS  
———————————————————————————————————————————  
Forward transfer admittance  
|y |  
9
15  
—
S
I = 10 A  
fs  
D
V
= 10 V *  
DS  
———————————————————————————————————————————  
Input capacitance  
Ciss  
—
980  
—
pF  
V
= 10 V  
DS  
————————————————————————————————  
Output capacitance  
Coss  
—
440  
—
pF  
V
= 0  
GS  
————————————————————————————————  
Reverse transfer capacitance  
Crss  
—
135  
—
pF  
f = 1 MHz  
———————————————————————————————————————————  
Turn–on delay time  
t
—
14  
—
ns  
I = 10 A  
d(on)  
D
————————————————————————————————  
Rise time  
t
—
90  
—
ns  
V
= 10 V  
r
GS  
————————————————————————————————  
Turn–off delay time  
t
—
180  
—
ns  
R = 3 Ω  
L
d(off)  
————————————————————————————————  
Fall time  
t
—
125  
—
ns  
f
———————————————————————————————————————————  
Body–drain diode forward  
V
—
1.0  
—
V
I = 20 A, V  
= 0  
DF  
F
GS  
voltage  
———————————————————————————————————————————  
Body–drain diode reverse  
recovery time  
t
—
90  
—
µs  
I
= 20 A, V  
= 0,  
rr  
GS  
F
diF / dt = 50 A / µs  
———————————————————————————————————————————  
* Pulse Test  
2SK2334 L , 2SK2334 S  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
200  
100  
50  
40  
30  
20  
10  
20  
10  
5
Operation in  
this area is  
limited by R  
2
1
DS(on)  
0.5  
0.2  
Ta = 25 °C  
2
0
50  
100  
150  
200  
1
5
10 20  
50 100  
(V)  
Drain to Source Voltage  
V
DS  
Case Temperature Tc (°C)  
Typical Output Characteristics  
Typical Transfer Characteristics  
= 10 V  
50  
20  
16  
12  
8
10 V  
6 V  
Pulse Test  
5 V  
V
DS  
Pulse Test  
40  
30  
20  
10  
4.5 V  
4 V  
3.5 V  
3 V  
Tc = 75°C  
25°C  
4
2.5 V  
= 2 V  
–25°C  
V
GS  
0
2
4
6
8
10  
0
5
1
2
3
4
Gate to Source Voltage  
V
(V)  
GS  
Drain to Source Voltage  
V
(V)  
DS  
2SK2334 L , 2SK2334 S  
Static Drain to Source on State Resistance  
Drain to Source Saturation Voltage vs.  
Gate to Source Voltage  
vs. Drain Current  
1
1.0  
0.8  
0.6  
0.4  
0.2  
Pulse Test  
Pulse Test  
0.5  
I
= 15 A  
10 A  
5 A  
D
0.2  
0.1  
V
GS  
= 4 V  
10 V  
0.05  
0.02  
0.01  
1
2
5
10 20  
50 100  
(A)  
0
2
4
6
8
10  
Drain Current  
I
Gate to Source Voltage  
V
(V)  
GS  
D
Forward Transfer Admittance vs.  
Drain Current  
Static Drain to Source on State Resistance  
vs. Temperature  
0.1  
50  
Pulse Test  
I
= 10 A  
D
20  
10  
Tc = –25 °C  
25 °C  
0.08  
2 A, 5 A  
V
= 4 V  
GS  
75 °C  
0.06  
0.04  
0.02  
5
2
2 A, 5 A, 10 A  
10 V  
1
V
= 10 V  
DS  
Pulse Test  
10 30  
Drain Current I (A)  
0.5  
0.1 0.3  
0
–40  
1
3
100  
0
40  
80  
120  
160  
Case Temperature Tc (°C)  
D
2SK2334 L , 2SK2334 S  
Typical Capacitance vs.  
Drain to Source Voltage  
Body–Drain Diode Reverse  
Recovery Time  
10000  
1000  
500  
V
GS  
= 0  
f = 1 MHz  
3000  
1000  
Ciss  
200  
100  
50  
Coss  
300  
100  
Crss  
30  
10  
20  
10  
di/dt = 50 A/µs  
V
= 0, Ta = 25°C  
GS  
0
10  
20  
30  
40  
50  
0.1 0.3  
1
3
10  
30  
(A)  
100  
Reverse Drain Current  
I
DR  
Drain to Source Voltage V  
(V)  
DS  
Switching Characteristics  
= 10 V, V  
Dynamic Input Characteristics  
1000  
500  
100  
20  
16  
12  
8
V
= 30 V  
GS  
DD  
PW = 5 µs, duty < 1 %  
80  
60  
40  
20  
t
t
V
= 10 V  
25 V  
d(off)  
DD  
V
GS  
200  
50 V  
V
DS  
f
100  
50  
t
r
I
= 20 A  
D
4
0
V
= 50 V  
25 V  
10 V  
20  
10  
DD  
t
d(on)  
3
0.3  
1
10  
(A)  
30  
0
20  
40  
60  
80  
100  
Gate Charge Qg (nc)  
Drain Current  
I
D
2SK2334 L , 2SK2334 S  
Reverse Drain Current vs.  
Souece to Drain Voltage  
Maximun Avalanche Energy vs.  
Channel Temperature Derating  
20  
16  
12  
8
40  
32  
24  
16  
Pulse Test  
I
V
= 20 A  
= 25 V  
AP  
DD  
duty < 0.1 %  
Ω
Rg > 50  
10 V  
5 V  
V
= 0, –5 V  
GS  
4
8
0
0
0.4  
0.8  
1.2  
1.6  
SD  
2.0  
(V)  
25  
50  
75  
100  
125  
150  
Source to Drain Voltage  
V
Channel Temperature Tch (°C)  
Avalanche Test Circuit and Waveform  
1
V
DSS  
2
E
=
• L • I  
•
AP  
AR  
V
– V  
DD  
DSS  
2
L
V
DS  
Monitor  
I
AP  
V
(BR)DSS  
Monitor  
I
AP  
Rg  
V
V
DD  
D. U. T  
DS  
I
D
Vin  
–15 V  
50Ω  
V
DD  
0
2SK2334 L , 2SK2334 S  
Normalized Transient Thermal Impedance vs. Pulse Width  
3
1
Tc = 25°C  
D = 1  
0.5  
0.3  
0.1  
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c  
ch – c = 4.17 °C/W, Tc = 25 °C  
PW  
T
P
DM  
D =  
0.03  
0.01  
PW  
T
10 µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
Pulse Width PW (S)  
Switching Time Test Circuit  
Waveform  
Vout  
Monitor  
Vin Monitor  
D.U.T.  
90%  
R
L
10%  
Vin  
V
DD  
Vin  
10 V  
Vout  
10%  
90%  
10%  
50Ω  
= 30 V  
90%  
td(off)  
td(on)  
t
f
tr  
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