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2SK2411-Z

型号：

2SK2411-Z

描述：

晶体管| MOSFET | N沟道| 60V V（ BR ） DSS | 30A I（ D） | TO- 263AB\n[ TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB ]

品牌：

ETC[ ETC ]

页数：

8 页

PDF大小：

62 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2411, 2SK2411-Z  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
PACKAGE DIMENSIONS  
The 2SK2411 is N-Channel MOS Field Effect Transistor designed  
for high speed switching applications.  
(in millimeter)  
4.8 MAX.  
10.6 MAX.  
10.0  
3.6 ±0.2  
1.3 ±0.2  
FEATURES  
• Low On-Resistance  
RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A)  
4
RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A)  
1 2 3  
• Low Ciss  
• Built-in G-S Gate Protection Diodes  
• High Avalanche Capability Ratings  
Ciss = 1500 pF TYP.  
0.5 ±0.2  
1.3 ±0.2  
2.8 ±0.2  
0.75 ±0.1  
2.54  
2.54  
1. Gate  
2. Drain  
QUALITY GRADE  
3. Source  
4. Fin (Drain)  
Standard  
JEDEC: TO-220AB  
Please refer to "Quality grade on NEC Semiconductor Devices" (Document  
number IEI-1209) published by NEC Corporation to know the  
specification of quality grade on the devices and its recommended applica-  
MP-25 (TO-220)  
4.8 MAX.  
(10.0)  
1.3 ±0.2  
0.5 ±0.2  
tions.  
4
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
1.4  
±0.2  
Drain to Source Voltage  
Gate to Source Voltage  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
60  
±20  
±30  
±120  
75  
V
V
1.0 ±0.3  
(2.54) (2.54)  
1
2 3  
Drain Current (DC)  
A
Drain Current (pulse)*  
A
Total Power Dissipation (Tc = 25 ˚C)  
Total Power Dissipation (TA = 25 ˚C)  
Channel Temperature  
W
W
°C  
PT2  
1.5  
Tch  
150  
Storage Temperature  
Tstg  
–55 to +150 °C  
MP-25Z(SURFACE MOUNT TYPE)  
Single Avalanche Current**  
Single Avalanche Energy**  
IAS  
30  
90  
A
Drain  
EAS  
mJ  
*
PW ≤ 10 µs, Duty Cycle ≤ 1 %  
Body  
Diode  
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0  
Gate  
Gate Protection  
Diode  
Source  
The information in this document is subject to change without notice.  
Document No. D13398EJ1V0DS00 (1st edition)  
(Previous No. TC-2492)  
Date Published March 1998 N CP(K)  
Printed in Japan  
1994  
©
2SK2411, 2SK2411-Z  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTIC  
Drain to Source On-Resistance  
Drain to Source On-Resistance  
Gate to Source Cutoff Voltage  
Forward Transfer Admittance  
Drain Leakage Current  
Gate to Source Leakage Current  
Input Capacitance  
SYMBOL  
RDS(on)1  
RDS(on)2  
VGS(off)  
| yfs |  
IDSS  
MIN.  
TYP.  
31  
MAX.  
40  
UNIT  
TEST CONDITIONS  
VGS = 10 V, ID = 15 A  
VGS = 4 V, ID = 15 A  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 15 A  
VDS = 60 V, VGS = 0  
VGS = ±20 V, VDS = 0  
VDS = 10 V  
mΩ  
mΩ  
40  
60  
1.0  
15  
1.5  
27  
2.0  
V
S
µA  
10  
µA  
IGSS  
±10  
Ciss  
1500  
720  
190  
20  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
Output Capacitance  
Coss  
Crss  
VGS = 0  
Reverse Transfer Capacitance  
Turn-On Delay Time  
f = 1 MHz  
td(on)  
tr  
ID = 15 A  
Rise Time  
260  
130  
150  
50  
VGS(on) = 10 V  
Turn-Off Delay Time  
td(off)  
tf  
VDD = 30 V  
RG = 10 Ω  
Fall Time  
Total Gate Charge  
QG  
ID = 30 A  
Gate to Source Charge  
Gate to Drain Charge  
QGS  
QGD  
VF(S-D)  
trr  
5.0  
VDD = 48 V  
15  
VGS = 10 V  
Body Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
1.1  
IF = 30 A, VGS = 0  
110  
320  
ns  
nC  
IF = 30 A, VGS = 0  
di/dt = 100 A/µs  
Qrr  
Test Circuit 1 Avalanche Capability  
Test Circuit 2 Switching Time  
D.U.T.  
D.U.T.  
V
GS  
R
L
90 %  
V
GS  
L
VGS (on)  
RG  
= 25 Ω  
10 %  
Wave  
Form  
0
PG.  
R
G
PG  
R = 10 Ω  
G
VDD  
V
DD  
50 Ω  
90 %  
I
D
90 %  
10 %  
VGS = 20 V → 0  
I
D
10 %  
0
V
0
GS  
I
D
BVDSS  
Wave  
Form  
I
AS  
t
d (on)  
t
r
t
d (off)  
t
f
VDS  
t
I
D
VDD  
t
on  
t
off  
t = 1 µs  
Duty Cycle ≤ 1 %  
Starting Tch  
Test Circuit 3 Gate Charge  
D.U.T.  
= 2 mA  
I
G
RL  
PG.  
50 Ω  
VDD  
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.  
2
2SK2411, 2SK2411-Z  
TYPICAL CHARACTERISTICS (TA = 25 °C)  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
100  
80  
100  
80  
60  
60  
40  
40  
20  
0
20  
0
20  
40  
60  
80 100 120 140 160  
20  
40  
60  
80 100 120 140 160  
T
c
- Case Temperature - °C  
T
c
- Case Temperature - °C  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD BIAS SAFE OPERATING AREA  
1000  
100  
100  
90  
80  
70  
60  
Pulsed  
V
GS = 10 V  
V
GS = 6 V  
I
D (pulse)  
µ
µ
I
D (DC)  
50  
VGS = 4 V  
40  
30  
20  
10  
10  
1
T
c
= 25 °C  
Single Pulse  
0
2
4
6
8
10  
12  
0.1  
1
10  
100  
V
DS - Drain to Source Voltage - V  
VDS - Drain to Source Voltage - V  
FORWARD TRANSFER CHARACTERISTICS  
Pulsed  
1000  
100  
VDS = 10 V  
T = –25 °C  
A
10  
1
25 °C  
125 °C  
0
5
10  
V
GS - Gate to Source Voltage - V  
3
2SK2411, 2SK2411-Z  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1000  
100  
10  
Rth (ch-a) = 83.3 °C/W  
R
th (ch-c) = 1.67 °C/W  
1
0.1  
Single Pulse  
0.01  
10µ  
100µ  
1 m  
10 m  
100 m  
1
10  
100  
1000  
PW - Pulse Width - s  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
1000  
100  
60  
50  
40  
30  
20  
V
DS = 10 V  
Pulsed  
Pulsed  
TA  
= –25 °C  
25 °C  
75 °C  
125 °C  
ID = 15 A  
10  
1
10  
0
1
10  
- Drain Current - A  
100  
0
5
10  
15  
20  
I
D
V
GS - Gate to Source Voltage - V  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
GATE TO SOURCE CUTOFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
60  
50  
40  
2.0  
1.5  
1.0  
V
DS = 10 V  
= 1 mA  
Pulsed  
I
D
V
GS = 4 V  
30  
20  
10  
0
V
GS = 10 V  
0.5  
0
–50  
0
50  
100  
150  
1
10  
- Drain Current - A  
100  
ID  
T
ch - Channel Temperature - °C  
4
2SK2411, 2SK2411-Z  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
1000  
100  
10  
80  
70  
60  
Pulsed  
V
GS = 4 V  
50  
40  
30  
20  
10 V  
V
GS = 0  
V
GS = 10 V  
10  
0
I
D
= 15 A  
1
–50 –25  
0
25 50  
75 100 125 150  
0
1.0  
2.0  
3.0  
T
ch - Channel Temperature - °C  
VSD - Source to Drain Voltage - V  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
10000  
1000  
100  
10  
V
GS = 0  
f = 1 MHz  
C
iss  
t
d (off)  
1000  
100  
10  
C
oss  
t
f
t
r
Crss  
t
d (on)  
V
V
DD = 30 V  
GS = 10 V  
RG = 10 Ω  
1.0  
1
10  
DS - Drain to Source Voltage - V  
100  
0.1  
1.0  
10  
100  
V
ID  
- Drain Current - A  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
1000  
100  
10  
80  
70  
16  
14  
µ
di/dt = 50 A/ s  
I = 30 A  
D
VGS = 0  
V
DD = 48 V  
60  
50  
12  
10  
V
GS  
40  
30  
20  
8
6
4
2
V
DS  
10  
0
0
10 20  
30  
40 50  
60  
70  
80  
0.1  
1.0  
10  
100  
Q
g
- Gate Charge - nC  
I
D
- Drain Current - A  
5
2SK2411, 2SK2411-Z  
SINGLE AVALANCHE ENERGY vs.  
INDUCTIVE LOAD  
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
100  
100  
80  
V
R
V
DD = 30 V  
G
= 25 Ω  
GS = 20 V → 0  
I
AS = 30 A  
IAS ≤ 30 A  
60  
10  
40  
20  
0
V
DD = 30 V  
V
GS = 20 V → 0  
R = 25 Ω  
G
1.0  
µ
µ
25  
50  
75  
100  
125  
150  
10  
100  
1 m  
10 m  
L - Inductive Load - H  
Starting Tch - Starting Channel Temperature - °C  
6
2SK2411, 2SK2411-Z  
REFERENCE  
Document Name  
Document No.  
C11745E  
C11531E  
C10535E  
C10943X  
MEI-1202  
X10679E  
D12971E  
D12972E  
D13085E  
NEC semiconductor device reliability/quality control system.  
Quality grade on NEC semiconductor devices.  
Semiconductor device mounting technology manual.  
IC package manual.  
Guide to quality assurance for semiconductor devices.  
Semiconductor selection guide.  
Power MOS FET features and application switching power supply.  
Application circuits using Power MOS FET.  
Safe operating area of Power MOS FET.  
The diode connected between the gate and source of the transistor serves as a protector against ESD. When  
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the  
rated voltage may be applied to this device.  
7
2SK2411, 2SK2411-Z  
[MEMO]  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in  
this document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property  
rights of third parties by or arising from use of a device described herein or any other liability arising from use  
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other  
intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a  
customer designated "quality assurance program" for a specific application. The recommended applications of  
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device  
before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 96.5  
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