Power F-MOS FETs
2SK2495
Silicon N-Channel Power F-MOS FET
■ Features
unit: mm
● Avalanche energy capacity guaranteed
● High-speed switching
● No secondary breakdown
3.4±0.3
8.5±0.2
6.0±0.5
1.0±0.1
■ Applications
● High-speed switching (switching power supply)
● For high-frequency power amplification
1.5max.
0.8±0.1
1.1max.
0.5max.
■ Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol
Ratings
Unit
V
2.54±0.3
Drain to Source breakdown voltage VDSS
250
5.08±0.5
Gate to Source voltage
DC
Pulse
Avalanche energy capacity
VGSS
ID
±30
V
1
2
3
±2
A
Drain current
1: Gate
2: Drain
3: Source
IDP
±4
A
EAS*
10
30
mJ
N Type Package
Allowable power
dissipation
TC = 25°C
Ta = 25°C
PD
W
1.3
Channel temperature
Storage temperature
Tch
150
°C
°C
Tstg
−55 to +150
*
L = 5mH, IL = 2A, VDD = 30V, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
IDSS
Conditions
VDS = 200V, VGS = 0
VGS = ±30V, VDS = 0
min
typ
max
Unit
µA
µA
V
Drain to Source cut-off current
Gate to Source leakage current
100
±1
IGSS
Drain to Source breakdown voltage VDSS
ID = 1mA, VGS = 0
250
1
Gate threshold voltage
Vth
VDS = 10V, ID = 1mA
VGS = 10V, ID = 1A
VDS = 25V, ID = 1A
IDR = 2A, VGS = 0
5
2
V
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
RDS(on)
| Yfs |
VDSF
1.2
1
Ω
0.5
S
−1.6
V
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
220
60
20
10
20
45
90
pF
pF
pF
ns
VDS = 10V, VGS = 0, f = 1MHz
Turn-on time (delay time)
Rise time
td(on)
tr
VDD = 200V, ID = 2A
ns
Fall time
tf
VGS = 10V, RL = 100Ω
ns
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
td(off)
Rth(ch-c)
Rth(ch-a)
ns
4.17
96.2
°C/W
°C/W
1
