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2SK2552

型号:

2SK2552

描述:

2SK2552数据表|数据表[ 01/2002 ][ 2SK2552 Data Sheet | Data Sheet[01/2002] ]

品牌:

ETC[ ETC ]

页数:

8 页

PDF大小:

48 K

DATA SHEET  
JUNCTION FIELD EFFECT TRANSISTOR  
2SK2552  
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR  
FOR IMPEDANCE CONVERTER OF ECM  
DESCRIPTION  
PACKAGE DRAWING (Unit: mm)  
The 2SK2552 is suitable for converter of ECM.  
+0.1  
–0.05  
0.1  
0.3 ± 0.05  
FEATURES  
Compact package  
G
High forward transfer admittance  
1000 µS TYP. (IDSS = 100 µA)  
1600 µS TYP. (IDSS = 200 µA)  
Includes diode and high resistance at G - S  
0 to 0.1  
D
S
+0.1  
–0  
0.2  
0.6  
0.5  
0.5  
0.75 ± 0.05  
1.0  
1.6 ± 0.1  
ORDERING INFORMATION  
PART NUMBER  
2SK2552  
PACKAGE  
SC-75 (USM)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
EQUIVALENT CIRCUIT  
Drain to Source Voltage Note1  
VDSX  
20  
–20  
10  
V
V
Gate to Drain Voltage  
Drain Current  
VGDO  
ID  
Drain  
mA  
mA  
mW  
°C  
Gate Current  
IG  
10  
Total Power Dissipation Note2  
Junction Temperature  
Storage Temperature  
Gate  
PT  
Tj  
200  
125  
Source  
Tstg  
–55 to +125 °C  
Notes 1. VGS = –1.0 V  
2. Mounted on ceramic substrate of 3.0 cm2 x 0.64 mm  
Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
D15941EJ1V0DS00 (1st edition)  
Date Published January 2002 NS CP(K)  
Printed in Japan  
2002  
©
2SK2552  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTICS  
Zero Gate Voltage Drain Cut-off Current  
Gate Cut-off Voltage  
SYMBOL  
IDSS  
TEST CONDITIONS  
VDS = 5.0 V, VGS = 0 V  
MIN. TYP. MAX. UNIT  
40  
600  
µA  
V
VGS(off)  
| yfs1 |  
| yfs2 |  
Ciss  
VDS = 5.0 V, ID = 1.0 µA  
0.1  
350  
350  
1.0  
Forward Transfer Admittance  
Forward Transfer Admittance  
Input Capacitance  
VDS = 5.0 V, ID = 30 µA, f = 1.0 kHz  
VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz  
VDS = 5.0 V, VGS = 0 V, f = 1.0 MHz  
See Test Circuit  
µS  
µS  
pF  
µV  
7.0  
1.8  
8.0  
3.0  
Noise Voltage  
NV  
IDSS RANK  
MARKING  
J2  
J3  
J4  
J5  
J6  
J7  
IDSS  
40 to 70  
60 to 110  
90 to 180  
150 to 300  
200 to 450  
300 to 600  
(µA)  
NOISE VOLTAGE TEST CIRCUIT  
+4.5 V  
JIS A  
NV (r.m.s)  
R = 1 k  
C = 10 pF  
2
Data Sheet D15941EJ1V0DS  
2SK2552  
TYPICAL CHARACTERISTICS (TA = 25°C)  
GATE TO SOURCE CURRENT vs.  
GATE TO SOURCE VOLTAGE  
DERATING FACTOR OF  
POWER DISSIPATION  
40  
30  
100  
80  
20  
10  
µ
1.0 0.8 0.6 0.4 0.2  
0
60  
0.2 0.4 0.6 0.8 1.0  
10  
20  
30  
40  
40  
20  
0
20  
40 60  
80 100 120 140 160  
VGS - Gate to Source Voltage - V  
TA - Ambient Temperature - ˚C  
INPUT CAPACITANCE vs.  
DRAIN TO SOURCE VOLTAGE  
DRAIN CURRENT vs.  
GATE TO SOURCE VOLTAGE  
100  
50  
1.0  
0.8  
0.6  
0.4  
0.2  
V
DS = 0 V  
V
DS = 5 V  
f = 1.0 MHz  
µ
0
A
20  
10  
5
µ
I
µ
S
D
1
2
1
1
2
5
10  
20  
50  
100  
0.6  
0.4  
0.2  
0
+0.2  
V
DS - Drain to Source Voltage - V  
V
GS - Gate to Source Voltage - V  
GATE TO SOURCE CUT-OFF VOLTAGE AND FORWARD  
TRANSFER ADMITTANCE vs. ZERO-GATE VOLTAGE  
DRAIN CURRENT CO-RELATION  
10.0  
V
DS = 5 V  
µ
5.0  
2.0  
1.0  
0.5  
|yfs  
|
0.2  
0.1  
V
GS (off)  
0.05  
0.02  
0.01  
10  
20  
50  
100  
200  
500 1000  
µ
Zero-Gate Voltage Drain Current -  
A
3
Data Sheet D15941EJ1V0DS  
2SK2552  
DRAIN CURRENT vs.  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
DRAIN TO SOURCE VOLTAGE  
RANK: J2  
RANK: J3  
0.15 V  
250  
200  
150  
100  
50  
300  
240  
180  
120  
60  
0.15 V  
µ
µ
0.10 V  
0.05 V  
0.10 V  
0.05 V  
V
GS = 0 V  
V
GS = 0 V  
0.15 V  
0.05 V  
0.10 V  
0.15 V  
0.05 V  
0.10 V  
0
0
0
0
0
2
4
6
8
10  
10  
10  
0
2
4
6
8
10  
V
DS - Drain to Source Voltage - V  
VDS - Drain to Source Voltage - V  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
RANK: J5  
RANK: J4  
500  
400  
300  
200  
100  
0
400  
320  
240  
160  
80  
0.15 V  
0.10 V  
0.15 V  
0.10 V  
µ
µ
0.05 V  
0.05 V  
V
GS = 0 V  
V
GS = 0 V  
0.05 V  
0.10 V  
0.05 V  
0.10 V  
0.15 V  
0.15 V  
0
0
2
4
6
8
10  
2
4
6
8
V
DS - Drain to Source Voltage - V  
VDS - Drain to Source Voltage - V  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
RANK: J6  
RANK: J7  
0.15 V  
0.10 V  
700  
560  
420  
280  
140  
0
900  
720  
540  
360  
180  
0
0.15 V  
0.10 V  
µ
µ
0.05 V  
0.05 V  
VGS = 0 V  
V
GS = 0 V  
0.05 V  
0.10 V  
0.05 V  
0.10 V  
0.15 V  
0.15 V  
2
4
6
8
0
2
4
6
8
10  
V
DS - Drain to Source Voltage - V  
VDS - Drain to Source Voltage - V  
4
Data Sheet D15941EJ1V0DS  
2SK2552  
[MEMO]  
5
Data Sheet D15941EJ1V0DS  
2SK2552  
[MEMO]  
6
Data Sheet D15941EJ1V0DS  
2SK2552  
[MEMO]  
7
Data Sheet D15941EJ1V0DS  
2SK2552  
The information in this document is current as of January, 2002. The information is subject to  
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or  
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all  
products and/or types are available in every country. Please check with an NEC sales representative  
for availability and additional information.  
No part of this document may be copied or reproduced in any form or by any means without prior  
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.  
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of  
third parties by or arising from the use of NEC semiconductor products listed in this document or any other  
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of customer's equipment shall be done under the full  
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third  
parties arising from the use of these circuits, software and information.  
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (including death) to persons arising from defects in NEC  
semiconductor products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failure features.  
NEC semiconductor products are classified into the following three quality grades:  
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products  
developed based on a customer-designated "quality assurance program" for a specific application. The  
recommended applications of a semiconductor product depend on its quality grade, as indicated below.  
Customers must check the quality grade of each semiconductor product before using it in a particular  
application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4  
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PANASONIC

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