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2SK2573(TENTATIVE)

型号:

2SK2573(TENTATIVE)

描述:

2SK2573 (暂定) - N沟道功率的F- MOS FET\n[ 2SK2573 (Tentative) - N-Channel Power F-MOS FET ]

品牌:

ETC[ ETC ]

页数:

4 页

PDF大小:

55 K

Power F-MOS FETs  
2SK2573 (Tentative)  
Silicon N-Channel Power F-MOS FET  
Features  
Avalanche energy capacity guaranteed  
High-speed switching  
Low ON-resistance  
unit: mm  
15.5±0.5  
3.0±0.3  
5˚  
φ3.2±0.1  
No secondary breakdown  
5˚  
Applications  
Contactless relay  
5˚  
5˚  
Diving circuit for a solenoid  
Driving circuit for a motor  
Control equipment  
5˚  
4.0  
2.0±0.2  
1.1±0.1  
0.7±0.1  
Switching power supply  
5.45±0.3  
5.45±0.3  
Absolute Maximum Ratings (TC = 25°C)  
5˚  
Parameter  
Symbol  
Ratings  
Unit  
V
Drain to Source breakdown voltage VDSS  
500  
1: Gate  
2: Drain  
3: Source  
1
2
3
Gate to Source voltage  
DC  
Pulse  
Avalanche energy capacity  
VGSS  
ID  
±30  
V
±20  
A
Drain current  
TOP-3E Package  
IDP  
±40  
A
EAS*  
20  
mJ  
Allowable power  
dissipation  
TC = 25°C  
Ta = 25°C  
100  
PD  
W
3
Channel temperature  
Storage temperature  
Tch  
150  
°C  
°C  
Tstg  
55 to +150  
*
L = 0.1mH, IL = 20A, 1 pulse  
Electrical Characteristics (TC = 25°C)  
Parameter  
Symbol  
IDSS  
Conditions  
VDS = 400V, VGS = 0  
VGS = ±20V, VDS = 0  
ID = 1mA, VGS = 0  
min  
typ  
max  
Unit  
µA  
µA  
V
Drain to Source cut-off current  
Gate to Source leakage current  
100  
±1  
IGSS  
Drain to Source breakdown voltage VDSS  
500  
1
Gate threshold voltage  
Vth  
VDS = 25V, ID = 1mA  
VGS = 10V, ID = 10A  
VDS = 25V, ID = 10A  
IDR = 20A, VGS = 0  
5
V
Drain to Source ON-resistance  
Forward transfer admittance  
Diode forward voltage  
RDS(on)  
| Yfs |  
VDSF  
0.32  
12  
0.4  
7.2  
S
2.8  
V
Input capacitance (Common Source) Ciss  
Output capacitance (Common Source) Coss  
Reverse transfer capacitance (Common Source) Crss  
3000  
430  
175  
150  
140  
480  
pF  
pF  
pF  
ns  
VDS = 20V, VGS = 0, f = 1MHz  
Turn-on time  
ton  
VDD = 150V, ID = 10A  
Fall time  
tf  
ns  
VGS = 10V, RL = 15Ω  
Turn-off time (delay time)  
Thermal resistance between channel and case  
Thermal resistance between channel and atmosphere  
td(off)  
Rth(ch-c)  
Rth(ch-a)  
ns  
1.25  
°C/W  
°C/W  
41.67  
1
Power F-MOS FETs  
2SK2573  
Area of safe operation (ASO)  
PD  
Ta  
IAS  
L-load  
102  
160  
140  
120  
100  
80  
102  
Non repetitive pulse  
TC=25˚C  
(1) TC=Ta  
(2) With a 100 × 100 × 2mm  
Al heat sink  
T
C=25˚C  
IDP  
ID  
(3) Without heat sink  
t=1ms  
10  
10  
E=20mJ  
DC  
100ms  
10ms  
(1)  
60  
1
1
40  
20  
(2)  
(3)  
PD=3.0W  
10–1  
0
10–1  
10–1  
1
10  
102  
103  
0
0
0
20 40 60 80 100 120 140 160  
10–2  
10–1  
1
10  
(
)
(
)
(
)
Drain to source voltage VDS  
V
Ambient temperature Ta ˚C  
L-load mH  
ID  
VGS  
RDS(on)  
ID  
Ciss, Coss, Crss  
VDS  
30  
25  
20  
15  
10  
5
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
10000  
TC=25˚C  
f=1MHz  
VDS=25V  
TC=25˚C  
TC=25˚C  
Ciss  
3000  
1000  
300  
100  
VGS=10V  
15V  
Coss  
Crss  
30  
10  
0
0
2
4
6
8
10  
10  
20  
30  
40  
50  
0
50  
100  
150  
200  
( )  
V
( )  
A
( )  
Drain to source voltage VDS V  
Gate to source voltage VGS  
Drain current ID  
| Yfs | ID  
ton, tf, td(off)  
ID  
16  
14  
12  
10  
8
800  
700  
600  
500  
400  
300  
200  
100  
0
VDS=25V  
TC=25˚C  
VCC=150  
VGS=10V  
TC=25˚C  
td(off)  
6
ton  
tf  
4
2
0
0
10  
20  
30  
40  
50  
5
10  
15  
20  
25  
( )  
A
( )  
A
Drain current ID  
Drain current ID  
2
Power F-MOS FETs  
2SK2573  
Rth(t)  
t
102  
Note: Rth was measured at Ta=25˚C  
and under natural convection.  
(1) Without heat sink  
(1)  
(2)  
(2) With a 100 × 100 × 2mm Al heat sink  
10  
1
10–1  
10–2  
10–3  
10–2  
10–1  
1
10  
102  
103  
( )  
s
Time  
t
3
Request for your special attention and precautions in using the technical information  
and semiconductors described in this material  
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-  
ment if any of the products or technologies described in this material and controlled under the  
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.  
(2) The technical information described in this material is limited to showing representative character-  
istics and applied circuit examples of the products. It does not constitute the warranting of industrial  
property, the granting of relative rights, or the granting of any license.  
(3) The products described in this material are intended to be used for standard applications or gen-  
eral electronic equipment (such as office equipment, communications equipment, measuring in-  
struments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,  
combustion equipment, life support systems and safety devices) in which exceptional quality and  
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or  
harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this material are subject to change without  
notice for reasons of modification and/or improvement. At the final stage of your design, purchas-  
ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to  
make sure that the latest specifications satisfy your requirements.  
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-  
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-  
wise, we will not be liable for any defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, redundant design is recommended,  
so that such equipment may not violate relevant laws or regulations because of the function of our  
products.  
(6) When using products for which dry packing is required, observe the conditions (including shelf life  
and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.  
(7) No part of this material may be reprinted or reproduced by any means without written permission  
from our company.  
Please read the following notes before using the datasheets  
A. These materials are intended as a reference to assist customers with the selection of Panasonic  
semiconductor products best suited to their applications.  
Due to modification or other reasons, any information contained in this material, such as available  
product types, technical data, and so on, is subject to change without notice.  
Customers are advised to contact our semiconductor sales office and obtain the latest information  
before starting precise technical research and/or purchasing activities.  
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but  
there is always the possibility that further rectifications will be required in the future. Therefore,  
Panasonic will not assume any liability for any damages arising from any errors etc. that may ap-  
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2001 MAR  
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