Power F-MOS FETs
2SK2660
Silicon N-Channel Power F-MOS FET
■ Features
● High-speed switching
unit: mm
● High drain-source voltage
6.5±0.1
5.3±0.1
4.35±0.1
2.3±0.1
0.5±0.1
■ Applications
● High-speed switching
■ Absolute Maximum Ratings (TC = 25°C)
1.0±0.1
0.1±0.05
0.93±0.1
Parameter
Symbol
Ratings
Unit
V
0.5±0.1
Drain to Source breakdown voltage VDSS
200
0.75±0.1
2.3±0.1
4.6±0.1
Gate to Source voltage
VGSS
ID
±30
V
DC
±4
A
Drain current
Pulse
IDP
±8
A
1: Gate
2: Drain
3: Source
Allowable power
dissipation
TC = 25°C
Ta = 25°C
10
1
2
3
PD
W
1
U Type Package
Channel temperature
Storage temperature
Tch
150
°C
°C
Tstg
−55 to +150
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
IDSS
Conditions
VDS = 160V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
min
typ
max
0.1
Unit
mA
µA
V
Drain to Source cut-off current
Gate to Source leakage current
IGSS
±1
Drain to Source breakdown voltage VDSS
200
1
Gate threshold voltage
Vth
VDS = 25V, ID = 1mA
VGS = 10V, ID = 2A
5
V
Drain to Source ON-resistance
Forward transfer admittance
RDS(on)
| Yfs |
0.8
1
1.1
Ω
VDS = 25V, ID = 2A, f = 1MHz
0.5
S
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
290
50
9
pF
pF
pF
ns
VDS = 20V, VGS = 0, f = 1MHz
Turn-on time (delay time)
Rise time
td(on)
tr
td(off)
tf
10
25
45
40
VGS = 10V, ID = 2A
ns
Turn-off time (delay time)
Fall time
RL = 50Ω, VDD = 100V
ns
ns
1
