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2SK3070(L)

型号：

2SK3070(L)

描述：

晶体管| MOSFET | N沟道| 40V V（ BR ） DSS | 75A I（ D） | TO- 262VAR\n[ TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | TO-262VAR ]

品牌：

ETC[ ETC ]

页数：

12 页

PDF大小：

62 K

下载PDF手册
2SK3070(L),2SK3070(S)  
Silicon N Channel MOS FET  
High Speed Power Switching  
ADE-208-684G (Z)  
8th. Edition  
Feb. 1999  
Features  
•
Low on-resistance  
RDS(on) =4.5mΩ typ.  
•
•
Low drive current  
4V gate drive device can be driven from 5V source  
Outline  
LDPAK  
4
4
D
1
2
3
1
G
2
3
1. Gate  
2. Drain  
3. Source  
4. Drain  
S
2SK3070(L),2SK3070(S)  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
40  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
VGSS  
ID  
±20  
V
75  
A
1
Note  
Drain peak current  
ID(pulse)  
300  
A
Body-drain diode reverse drain current IDR  
75  
A
3
Note  
Avalanche current  
Avalanche energy  
Channel dissipation  
Channel temperature  
Storage temperature  
IAP  
50  
A
3
Note  
EAR  
333  
mJ  
W
°C  
°C  
2
Pch Note  
100  
Tch  
150  
Tstg  
–55 to +150  
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %  
2. Value at Tc = 25°C  
3. Value at Tch = 25°C, Rg ≥ 50Ω  
2
2SK3070(L),2SK3070(S)  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol  
Min  
Typ  
Max  
Unit  
Test Conditions  
Drain to source breakdown  
voltage  
V(BR)DSS  
40  
—
—
V
ID = 10mA, VGS = 0  
Gate to source leak current  
IGSS  
IDSS  
—
—
—
—
±0.1  
µA  
µA  
VGS = ±20V, VDS = 0  
Zero gate voltege drain  
current  
10  
VDS = 40 V, VGS = 0  
1
Gate to source cutoff voltage VGS(off)  
Static drain to source on state RDS(on)  
resistance  
1.0  
—
—
50  
—
—
—
—
—
—
—
—
—
—
—
—
2.5  
5.8  
10  
—
—
—
—
—
—
—
—
—
—
—
—
V
ID = 1mA, VDS = 10VNote  
1
4.5  
mΩ  
mΩ  
S
ID = 40A, VGS = 10VNote  
1
6.5  
ID = 40A, VGS = 4VNote  
1
Forward transfer admittance |yfs|  
80  
ID = 40A, VDS = 10VNote  
Input capacitance  
Output capacitance  
Ciss  
6800  
1300  
380  
130  
25  
pF  
pF  
pF  
nc  
nc  
nc  
ns  
ns  
ns  
ns  
V
VDS = 10V  
VGS = 0  
Coss  
Reverse transfer capacitance Crss  
f = 1MHz  
Total gate charge  
Gate to source charge  
Gate to drain charge  
Turn-on delay time  
Rise time  
Qg  
Qgs  
Qgd  
td(on)  
tr  
VDD = 25V  
VGS = 10V  
ID = 75A  
30  
60  
VGS = 10V, ID = 40A  
RL = 0.75Ω  
300  
550  
400  
1.05  
Turn-off delay time  
Fall time  
td(off)  
tf  
Body–drain diode forward  
voltage  
VDF  
IF = 75A, VGS = 0  
Body–drain diode reverse  
recovery time  
trr  
—
90  
—
ns  
IF = 75A, VGS = 0  
diF/ dt =50A/µs  
Note: 1. Pulse test  
3
2SK3070(L),2SK3070(S)  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
200  
150  
100  
50  
1000  
300  
100  
30  
10  
3
Operation in  
this area is  
limited by R  
DS(on)  
1
0.3  
0.1  
Ta = 25°C  
0
3
Drain to Source Voltage  
30  
50  
100  
150  
200  
0.1 0.3  
1
10  
100  
V
(V)  
DS  
Case Temperature Tc (°C)  
Typical Transfer Characteristics  
Typical Output Characteristics  
100  
80  
60  
40  
20  
100  
80  
60  
40  
20  
4 V  
V
= 10 V  
DS  
Pulse Test  
3.5 V  
5 V  
Pulse Test  
V
GS  
= 10 V  
3 V  
75°C  
25°C  
Tc = –25°C  
2.5 V  
0
0
1
2
3
4
5
2
4
6
8
10  
Gate to Source Voltage  
V
(V)  
GS  
Drain to Source Voltage  
V
(V)  
DS  
4
2SK3070(L),2SK3070(S)  
Drain to Source Saturation Voltage vs.  
Gate to Source Voltage  
Static Drain to Source on State Resistance  
vs. Drain Current  
100  
0.5  
0.4  
0.3  
0.2  
0.1  
Pulse Test  
Pulse Test  
50  
20  
10  
5
I
= 50 A  
D
V
= 4 V  
GS  
10 V  
20 A  
16  
2
1
10 A  
1
3
1000  
12  
Gate to Source Voltage  
300  
(A)  
0
10  
Drain Current  
4
8
20  
30 100  
V
(V)  
I
GS  
D
Forward Transfer Admittance vs.  
Drain Current  
Static Drain to Source on State Resistance  
vs. Temperature  
500  
20  
Pulse Test  
V
= 10 V  
DS  
200 Pulse Test  
16  
12  
8
100  
50  
Tc = –25 °C  
I
= 50 A  
D
20  
10  
5
V
= 10 V  
GS  
10, 20 A  
25 °C  
75 °C  
2
1
10, 20, 50 A  
4
0
4 V  
0.5  
0.1 0.3  
–50  
0
50  
100  
150  
200  
1
3
10  
D
30  
100  
Case Temperature Tc (°C)  
Drain Current  
I
(A)  
5
2SK3070(L),2SK3070(S)  
Body–Drain Diode Reverse  
Typical Capacitance vs.  
Drain to Source Voltage  
Recovery Time  
30000  
10000  
1000  
V
GS  
= 0  
f = 1 MHz  
500  
Ciss  
200  
100  
50  
3000  
1000  
Coss  
Crss  
300  
100  
20  
di / dt = 50 A / µs  
V
= 0, Ta = 25 °C  
GS  
10  
0.1 0.3  
1
3
10  
30  
(A)  
100  
0
10  
20  
30  
40  
50  
Reverse Drain Current  
I
DR  
Drain to Source Voltage V  
(V)  
DS  
Dynamic Input Characteristics  
= 75 A  
Switching Characteristics  
1000  
500  
100  
80  
60  
40  
20  
20  
I
D
t
d(off)  
V
GS  
16  
12  
8
t
f
200  
100  
50  
V
= 40 V  
25 V  
DD  
t
r
10 V  
V
DS  
t
d(on)  
V
= 40 V  
25 V  
4
0
DD  
20  
10  
V
= 10 V, V  
= 30 V  
DD  
GS  
PW = 5 µs, duty < 1 %  
10 V  
10 20 50 100  
2
5
0
1
0.5  
80  
160  
240  
320  
400  
0.1 0.2  
Gate Charge Qg (nc)  
Drain Current  
I
(A)  
D
6
2SK3070(L),2SK3070(S)  
Reverse Drain Current vs.  
Source to Drain Voltage  
Maximun Avalanche Energy vs.  
Channel Temperature Derating  
500  
400  
300  
200  
100  
80  
60  
40  
20  
I
= 50 A  
AP  
10 V  
5 V  
V
= 25 V  
DD  
duty < 0.1 %  
Ω
Rg > 50  
V
= 0, –5 V  
GS  
100  
0
p
X “ Ł  
1.6 2.0  
0
0.4  
0.8  
1.2  
25  
50  
75  
100  
125  
150  
Source to Drain Voltage  
V
(V)  
Channel Temperature Tch (°C)  
SD  
Avalanche Test Circuit  
Avalanche Waveform  
V
DSS  
– V  
1
2
2
E
=
• L • I  
•
AP  
AR  
V
DSS  
DD  
L
V
DS  
Monitor  
I
AP  
V
(BR)DSS  
Monitor  
I
AP  
Rg  
V
V
DD  
D. U. T  
DS  
I
D
Vin  
15 V  
50Ω  
V
DD  
0
7
2SK3070(L),2SK3070(S)  
Normalized Transient Thermal Impedance vs. Pulse Width  
3
1
Tc = 25°C  
D = 1  
0.5  
0.3  
0.1  
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c  
ch – c = 1.25 °C/W, Tc = 25 °C  
PW  
T
P
DM  
D =  
0.03  
0.01  
PW  
T
10 µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
Pulse Width PW (S)  
Switching Time Test Circuit  
Waveform  
Vout  
Monitor  
Vin Monitor  
D.U.T.  
90%  
R
L
10%  
10%  
90%  
Vin  
V
DD  
Vin  
10 V  
Vout  
10%  
50Ω  
= 30 V  
90%  
td(off)  
td(on)  
t
f
tr  
8
2SK3070(L),2SK3070(S)  
Package Dimensions  
As of January, 2001  
Unit: mm  
4.44 ± 0.2  
1.3 ± 0.15  
10.2 ± 0.3  
2.59 ± 0.2  
1.2 ± 0.2  
1.27 ± 0.2  
+ 0.2  
– 0.1  
0.86  
0.76 ± 0.1  
2.54 ± 0.5  
0.4 ± 0.1  
2.54 ± 0.5  
Hitachi Code  
JEDEC  
LDPAK (L)  
—
EIAJ  
—
Mass (reference value)  
1.4 g  
9
2SK3070(L),2SK3070(S)  
As of January, 2001  
Unit: mm  
4.44 ± 0.2  
7.8  
6.6  
10.2 ± 0.3  
1.3 ± 0.15  
+ 0.2  
– 0.1  
0.1  
2.2  
1.27 ± 0.2  
0.4 ± 0.1  
+ 0.2  
– 0.1  
1.2 ± 0.2  
0.86  
2.54 ± 0.5  
2.54 ± 0.5  
Hitachi Code  
JEDEC  
LDPAK (S)-(1)  
—
EIAJ  
—
Mass (reference value)  
1.3 g  
10  
2SK3070(L),2SK3070(S)  
As of January, 2001  
Unit: mm  
4.44 ± 0.2  
7.8  
6.6  
10.2 ± 0.3  
1.3 ± 0.2  
+ 0.2  
– 0.1  
0.1  
2.2  
1.27 ± 0.2  
0.4 ± 0.1  
+ 0.2  
1.2 ± 0.2  
2.54 ± 0.5  
0.86  
– 0.1  
2.54 ± 0.5  
Hitachi Code  
LDPAK (S)-(2)  
JEDEC  
—
EIAJ  
—
Mass (reference value)  
1.35 g  
11  
2SK3070(L),2SK3070(S)  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
Asia  
: http://semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
: http://sicapac.hitachi-asia.com  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
179 East Tasman Drive, Dornacher Straβe 3  
Hitachi Europe GmbH  
Electronic Components Group  
Hitachi Asia Ltd.  
Hitachi Tower  
16 Collyer Quay #20-00,  
Singapore 049318  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower,  
San Jose,CA 95134  
D-85622 Feldkirchen, Munich  
World Finance Centre,  
Tel: <1> (408) 433-1990 Germany  
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Tel : <65>-538-6533/538-8577  
Fax : <65>-538-6933/538-3877  
URL : http://www.hitachi.com.sg  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon,  
Hong Kong  
Tel : <852>-(2)-735-9218  
Fax : <852>-(2)-730-0281  
URL : http://www.hitachi.com.hk  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road,  
Hung-Kuo Building,  
Taipei (105), Taiwan  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 585160  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.  
Colophon 2.0  
12  
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