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2SK3434-ZJ

型号：

2SK3434-ZJ

描述：

晶体管| MOSFET | N沟道| 60V V（ BR ） DSS | 48A I（ D） | TO- 263AB\n[ TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 48A I(D) | TO-263AB ]

品牌：

ETC[ ETC ]

页数：

8 页

PDF大小：

81 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3434  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
ORDERING INFORMATION  
DESCRIPTION  
PART NUMBER  
2SK3434  
PACKAGE  
TO-220AB  
TO-262  
The 2SK3434 is N-channel MOS Field Effect Transistor  
designed for high current switching applications.  
2SK3434-S  
2SK3434-ZJ  
2SK3434-Z  
FEATURES  
TO-263  
• Super low on-state resistance  
RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 24 A)  
RDS(on)2 = 31 mΩ MAX. (VGS = 4.0 V, ID = 24 A)  
• Low Ciss: Ciss = 2100 pF TYP.  
• Built-in gate protection diode  
TO-220SMDNote  
Note TO-220SMD package is produced only  
in Japan.  
(TO-220AB)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
60  
±20  
V
V
Gate to Source Voltage  
Drain Current (DC)  
±48  
A
Drain Current (pulse) Note1  
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
±120  
56  
A
W
PT  
1.5  
W
°C  
°C  
A
(TO-262)  
Tch  
150  
Storage Temperature  
Tstg  
IAS  
–55 to +150  
28  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
EAS  
78  
mJ  
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%  
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V  
(TO-263,TO-220SMD)  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published March 2001 NS CP(K)  
Printed in Japan  
D14603EJ2V0DS00 (2nd edition)  
The mark ★ shows major revised points.  
1999, 2001  
©
2SK3434  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTICS  
Zero Gate Drain Current  
SYMBOL  
IDSS  
TEST CONDITIONS  
VDS = 60 V, VGS = 0 V  
MIN. TYP. MAX. UNIT  
10  
µA  
V
Gate Cut-off Voltage  
VGS(off)  
| yfs |  
RDS(on)1  
RDS(on)2  
Ciss  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 24 A  
VGS = 10 V, ID = 24 A  
VGS = 4.0 V, ID = 24 A  
VDS = 10 V  
1.5  
13  
2.0  
27  
2.5  
Forward Transfer Admittance  
Drain to Source On-state Resistance  
S
16  
20  
31  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
22  
Input Capacitance  
2100  
340  
170  
40  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
Coss  
Crss  
VGS = 0 V  
f = 1MHz  
td(on)  
tr  
td(off)  
tf  
VDD = 30 V, ID = 24 A  
VGS(on) = 10 V  
400  
120  
160  
40  
Turn-off Delay Time  
Fall Time  
RG = 10 Ω  
Total Gate Charge  
QG  
VDD = 48 V  
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
QGD  
VF(S-D)  
trr  
VGS = 10 V  
7
ID = 48 A  
11  
IF = 48 A, VGS = 0 V  
IF = 48 A, VGS = 0 V  
di/dt = 100 A/µs  
1.0  
43  
ns  
nC  
Qrr  
61  
TEST CIRCUIT 1 AVALANCHE CAPABILITY  
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
D.U.T.  
L
RG  
= 25 Ω  
V
GS  
R
L
90%  
GS(on)  
PG.  
V
GS  
V
10%  
V
DD  
50 Ω  
Wave Form  
0
RG  
V
GS = 20 V → 0 V  
PG.  
V
DD  
90%  
I
D
90%  
10%  
BVDSS  
I
D
I
AS  
V
0
GS  
10%  
I
D
0
V
DS  
Wave Form  
I
D
t
r
t
t
d(on)  
d(off)  
t
f
VDD  
τ
t
on  
toff  
τ = 1µs  
Starting Tch  
Duty Cycle ≤ 1%  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
I
G
= 2 mA  
RL  
PG.  
V
DD  
50 Ω  
2
Data Sheet D14603EJ2V0DS  
2SK3434  
TYPICAL CHARACTERISTICS (TA = 25°C )  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
70  
60  
100  
80  
60  
40  
20  
0
50  
40  
30  
20  
10  
0
0
20  
40 60  
80 100 120 140 160  
20 40  
60  
80 100 120 140 160  
0
T
ch - Channel Temperature - ˚C  
T
C
- Case Temperature - ˚C  
FORWARD BIAS SAFE OPERATING AREA  
★
1000  
100  
10  
I
D(pulse)  
PW  
=
10  
100  
µ
s
1
µ
ms  
s
Limited  
I
D(DC)  
10  
ms  
S = 10 V)  
RDS(on)  
(at V  
G
DC  
P
o
w
Limited  
er Dissipation  
1
TC  
= 25˚C  
Single Pulse  
0.1  
0.1  
1
10  
DS - Drain to Source Voltage - V  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
100  
V
1000  
100  
10  
Rth(ch-A) = 83.3˚C/W  
Rth(ch-C) = 2.23˚C/W  
1
0.1  
0.01  
Single Pulse  
100 1000  
µ
10  
1 m  
10 m  
PW - Pulse Width - s  
Data Sheet D14603EJ2V0DS  
100 m  
1
10  
100  
µ
3
2SK3434  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD TRANSFER CHARACTERISTICS  
Pulsed  
1000  
100  
50  
40  
30  
20  
T
A
= −40˚C  
25˚C  
10  
1
75˚C  
V
GS =10 V  
150˚C  
V
GS = 4.0 V  
10  
0
Pulsed  
V
DS = 10 V  
5.0  
0.1  
0
0.2  
0.4  
0.6  
0.8  
6.0  
1.0  
2.0  
3.0  
4.0  
VDS - Drain to Source Voltage - V  
V
GS - Gate to Source Voltage - V  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
100  
10  
50  
V
DS = 10 V  
Pulsed  
Pulsed  
40  
30  
20  
10  
0
T
A
= −40˚C  
25˚C  
1
75˚C  
I = 24 A  
D
150˚C  
0.1  
0.01  
0.01  
0.1  
1
10  
100  
5
10  
15  
20  
0
ID - Drain Current - A  
VGS - Gate to Source Voltage - V  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
GATE TO SOURCE THRESHOLD VOLTAGE vs.  
CHANNEL TEMPERATURE  
40  
30  
3.0  
Pulsed  
V
DS = 10 V  
= 1 mA  
I
D
2.5  
2.0  
1.5  
1.0  
V
GS = 4.0 V  
20  
10  
0
V
GS = 10 V  
0.5  
0
1
10  
100  
1000  
−50  
0
50  
100  
150  
I
D - Drain Current - A  
T
ch - Channel Temperature - ˚C  
4
Data Sheet D14603EJ2V0DS  
2SK3434  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
60  
50  
40  
30  
20  
1000  
100  
10  
Pulsed  
Pulsed  
V
GS = 10 V  
V
GS = 4.0 V  
V
GS = 0 V  
VGS = 10 V  
1.0  
0.1  
10  
0
0
1.5  
1.0  
- Source to Drain Voltage - V  
0.5  
100  
150  
0
50  
−50  
V
SD  
T
ch - Channel Temperature - ˚C  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
10000  
1000  
1000  
V
GS = 0 V  
f = 1 MHz  
t
r
t
d(off)  
Ciss  
100  
10  
1
t
f
t
d(on)  
Coss  
100  
10  
Crss  
V
V
DD = 30 V  
GS = 10 V  
RG = 10 Ω  
0.1  
1
10  
100  
0.1  
1
10  
100  
I
D
- Drain Current - A  
V
DS - Drain to Source Voltage - V  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
16  
1000  
100  
80  
70  
60  
50  
40  
30  
20  
µ
di/dt = 100 A/ s  
GS = 0 V  
V
14  
12  
10  
8
V
GS  
V
DD = 48 V  
30 V  
12 V  
6
10  
1
4
V
DS  
2
10  
0
0.1  
1
10  
100  
5
10  
Q
15 20 25 30  
35 40  
0
I
D
- Drain Current - A  
G
- Gate Charge - nC  
5
Data Sheet D14603EJ2V0DS  
2SK3434  
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
SINGLE AVALANCHE CURRENT vs.  
INDUCTIVE LOAD  
100  
10  
160  
140  
120  
100  
80  
V
R
V
I
DD = 30 V  
= 25 Ω  
GS = 20 → 0 V  
AS ≤ 28 A  
G
I
AS = 28A  
EAS  
=
78  
mJ  
60  
1
40  
V
DD = 30V  
= 25 Ω  
GS = 20 →0 V  
20  
R
G
V
0.1  
10  
0
µ
100  
µ
1m  
10m  
25  
50  
75  
100  
125  
150  
L - Inductive Load - H  
Starting Tch - Starting Channel Temperature - ˚C  
6
Data Sheet D14603EJ2V0DS  
2SK3434  
PACKAGE DRAWINGS (Unit: mm)  
1) TO-220AB(MP-25)  
2) TO-262(MP-25 Fin Cut)  
4.8 MAX.  
4.8 MAX.  
1.3±0.2  
10.6 MAX.  
(10)  
4
φ
3.6±0.2  
1.3±0.2  
10.0  
1
2
3
4
1
2 3  
1.3±0.2  
1.3±0.2  
2.8±0.2  
0.5±0.2  
1.Gate  
0.75±0.3  
2.54 TYP.  
2.54 TYP.  
0.75±0.1  
0.5±0.2  
2.8±0.2  
2.Drain  
2.54 TYP.  
2.54 TYP.  
3.Source  
4.Fin (Drain)  
1.Gate  
2.Drain  
3.Source  
4.Fin (Drain)  
3) TO-263 (MP-25ZJ)  
4) TO-220SMD(MP-25Z)Note  
4.8 MAX.  
(10)  
4
4.8 MAX.  
(10)  
4
1.3±0.2  
1.3±0.2  
1.4±0.2  
1.0±0.3  
1.4±0.2  
0.7±0.2  
0.5±0.2  
0.5±0.2  
2.54 TYP.  
2.54 TYP.  
3
1
2
2.54 TYP.  
2.54 TYP.  
3
1
2
1.Gate  
2.Drain  
3.Source  
1.Gate  
2.Drain  
3.Source  
4.Fin (Drain)  
4.Fin (Drain)  
Note This package is produced only in Japan.  
EQUIVALENT CIRCUIT  
Remark The diode connected between the gate and source of the transistor  
serves as a protector against ESD. When this device actually used,  
an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
Drain  
Body  
Diode  
Gate  
Gate  
Protection  
Diode  
7
Data Sheet D14603EJ2V0DS  
Source  
2SK3434  
•
The information in this document is current as of March, 2001. The information is subject to change  
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data  
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products  
and/or types are available in every country. Please check with an NEC sales representative for  
availability and additional information.  
•
•
No part of this document may be copied or reproduced in any form or by any means without prior  
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.  
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of  
third parties by or arising from the use of NEC semiconductor products listed in this document or any other  
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of customer's equipment shall be done under the full  
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third  
parties arising from the use of these circuits, software and information.  
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (including death) to persons arising from defects in NEC  
semiconductor products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failure features.  
NEC semiconductor products are classified into the following three quality grades:  
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products  
developed based on a customer-designated "quality assurance program" for a specific application. The  
recommended applications of a semiconductor product depend on its quality grade, as indicated below.  
Customers must check the quality grade of each semiconductor product before using it in a particular  
application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4  
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