IXGX 32N170AH1
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
PLUS247 Outline (IXGX)
IC = I ; VCE = 10 V
Note 2 C25
16
23
S
Cies
Coes
Cres
3500
310
40
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qg
Qge
Qgc
155
30
51
nC
nC
nC
td(on)
tri
td(off)
tfi
46
57
260
50
ns
ns
500 ns
100 ns
4.2 mJ
Inductive load, TJ = 25°C
IC = IC25, VGE = 15 V
RG = 2.7 Ω, VCE = 0.5 VCES
Eoff
2.5
td(on)
tri
Eon
td(off)
tfi
48
59
4.0
300
70
ns
ns
mJ
ns
Inductive load, TJ = 125°C
IC = IC25, VGE = 15 V
RG = 2.7 Ω, VCE = 0.5 VCES
ns
Eoff
3.0
mJ
RthJC
RthCK
0.35 K/W
K/W
0.15
ReverseDiode(FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = 60A, VGE = 0 V, Pulse test,
t ≤ 300 µs, duty cycle d ≤ 2 %
2.4
2.4
2.7
V
V
TJ = 125°C
IRM
trr
IF = 60A, VGE = 0 V, -diF/dt = 600 A/µs
VR = 1200 V
50
55
150
350
A
A
ns
ns
TJ = 125°C
TJ = 125°C
RthJC
0.35 K/W
Notes:1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
3. See DH60-18A and IXGH32N170A datasheets for additional
characteristics
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
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