请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGQ85N33PCD1

型号：

IXGQ85N33PCD1

描述：

高级技术信息PolarTM高速IGBT与反并联二极管[ Advance Technical Information PolarTM High Speed IGBT with Anti-Parallel Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

150 K

下载PDF手册
Advance Technical Information  
PolarTM High Speed  
VCES  
ICP  
= 330 V  
= 340 A  
IXGQ85N33PCD1  
IGBT  
VCE(sat) ≤ 2.1 V  
with Anti-Parallel Diode  
for PDP Sustain Circuit  
Symbol  
Test Conditions  
Maximum Ratings  
TO-3P  
VCES  
VGEM  
TJ = 25°C to 150°C  
330  
V
V
±30  
G
C
IC25  
ICP  
TC = 25°C, IGBT chip capability  
TJ ≤ 150°C, tp ≤ 1 μs, D ≤ 1%  
TJ ≤ 150°C, tp < 10 μs  
85  
A
A
A
A
E
(TAB)  
C = Collector  
TAb = Collector  
340  
40  
G = Gate  
E = Emitter  
IDP  
IC(RMS)  
Lead current limit  
75  
Features  
SSOA  
VGE = 15 V, TVJ = 150°C, RG = 20 Ω  
ICM = 96  
A
• International standard package  
• Fast tfi for minimum turn off  
switching losses  
(RBSOA) Clamped inductive load, VCE < 300 V  
PC  
TC = 25°C  
150  
W
• MOS Gate turn-on  
- drive simplicity  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
• Positive dVsat/dt for  
paralleling  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body  
300  
260  
°C  
Md  
Mounting torque  
1.3/10 Nm/lb.in.  
5.5  
≤
Weight  
g
Symbol Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
Min. Typ. Max.  
VGE(th)  
ICES  
IC = 1 mA, VCE = VGE  
3.0  
6.0  
V
VCE = 330 V  
VGE = 0 V  
1 μA  
TJ = 125°C  
200 μA  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
VCE(sat)  
VGE = 15V,  
Note 1  
IC = 50 A  
1.43 2.1  
V
V
V
V
TJ = 125°C  
IC = 100 A  
TJ = 125°C  
1.47  
1.85 3.0  
2.0  
© 2006 IXYS CORPORATION, All rights reserved  
DS99610D(02/07)  
IXGQ85N33PCD1  
SymbolTest Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
Min. Typ. Max.  
TO-3P (IXTQ) Outline  
gfs  
IC = 43 A, VCE = 10 V  
30  
49  
S
Cies  
Coes  
Cres  
2200  
155  
25  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
80  
15  
23  
nC  
nC  
nC  
Qge  
Qgc  
IC = 43 A, VGE = 15 V, VCE = 0.5 VCES  
td(on)  
tri  
td(off)  
tfi  
td(on)  
tri  
td(off)  
tfi  
20  
43  
87  
72  
ns  
ns  
ns  
ns  
Resistive load, TJ = 25°C  
IC = 50 A, VGE = 15 V  
VCE = 240 V, RG = 5 Ω  
350  
20  
95  
ns  
ns  
ns  
ns  
Resistive load, TJ = 125°C  
IC = 50 A, VGE = 15 V  
VCE = 240 V, RG = 5 Ω  
88  
130  
RthJC  
RthCK  
0.833 K/W  
K/W  
0.25  
Reverse Diode  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
SymbolTest Conditions  
Min.  
Typ. Max.  
VF  
IF = 20A,VGE = 0 V, Note 1  
IF = 40A,VGE = 0 V, Note 1  
2.0  
2.8  
V
V
RthJC  
trr  
2.5 K/W  
250 ns  
Note 1: Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGQ85N33PCD1  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25  
º
C
@ 25 C  
º
180  
160  
140  
120  
100  
80  
300  
270  
240  
210  
180  
150  
120  
90  
V
= 15V  
13V  
GE  
V
= 15V  
13V  
GE  
11V  
11V  
9V  
7V  
9V  
7V  
60  
40  
60  
20  
30  
5V  
5V  
4
0
0
0
1
2
3
5
6
7
8
9
10  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. Dependence of VCE(  
Tem perature  
on  
)
sat  
º
C
180  
160  
140  
120  
100  
80  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
V
= 15V  
13V  
GE  
V
= 15V  
GE  
11V  
I
= 170A  
C
9V  
I
I
= 85A  
C
C
7V  
60  
40  
= 42.5A  
5V  
20  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
-50  
-25  
0
25  
50  
75  
100 125 150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Em itter Voltage  
vs. Gate-to-Em itter voltage  
Fig. 6. Input Adm ittance  
200  
180  
160  
140  
120  
100  
80  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
= 25ºC  
T
J
I
= 170A  
85A  
C
42.5A  
60  
T = 125ºC  
J
40  
25ºC  
- 40ºC  
20  
0
5
6
7
8
9
10 11 12 13 14 15  
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
9
9.5  
VG E - Volts  
VG E - Volts  
© 2006 IXYS CORPORATION, All rights reserved  
IXGQ85N33PCD1  
Fig. 8. Resistive Turn-On Rise Tim e  
vs. Junction Tem perature  
Fig. 7. Transconductance  
60  
50  
40  
30  
20  
10  
0
160  
140  
120  
100  
80  
= - 40ºC  
T
J
25ºC  
125ºC  
I
= 85A  
C
R
V
V
= 5Ω  
G
= 15V  
GE  
CE  
= 240V  
I
= 42.5A  
C
60  
40  
20  
I
= 21A  
C
0
25 35 45 55 65 75 85 95 105 115 125  
0
40  
80  
120  
160  
200  
240  
280  
T - Degrees Centigrade  
J
I C - Amperes  
Fig. 9. Resistive Turn-On Rise Tim e  
vs. Collector Current  
Fig. 10. Resistive Turn-On Rise Tim e  
vs. Gate Resistance  
160  
140  
120  
100  
80  
18 0  
16 0  
14 0  
12 0  
10 0  
80  
I
= 85A  
C
C
= 125ºC  
T
J
R
V
V
= 5Ω  
G
= 15V  
GE  
CE  
= 240V  
I
= 42.5A  
= 25ºC  
T
J
= 125ºC  
T
J
V
V
= 15V  
GE  
CE  
60  
60  
= 240V  
I
= 21A  
14  
C
40  
40  
20  
20  
4
6
8
10  
R
12  
- Ohms  
16  
18  
20  
20  
30  
40  
50  
60  
70  
80  
90  
I C - Amperes  
G
Fig. 11. Resistive Turn-On Delay Tim e  
vs. Gate Resistance  
Fig. 12. Resistive Turn-Off Sw itching  
Tim e vs. Junction Tem perature  
23.5  
23  
180  
160  
140  
120  
100  
80  
I
= 21A  
= 85A  
t d(off)  
C
= 125ºC  
T
J
I
= 42.5A  
C
t f  
- - - - - -  
V
V
= 15V  
GE  
CE  
22.5  
22  
I
R
= 5Ω  
C
= 240V  
G
V
V
= 15V  
GE  
CE  
I
= 42.5A  
C
21.5  
21  
= 240V  
I
I
= 85A  
= 21A  
C
C
20.5  
20  
I
= 21A  
42.5A  
85A  
C
19 . 5  
19  
60  
4
6
8
10 12 14 16 18 20 22 24  
- Ohms  
25  
50  
75  
100  
125  
150  
R
T J - Degrees Centigrade  
G
IXYS reserves the right to change limits, test conditions and dimensions.  
IXGQ85N33PCD1  
Fig. 13. Resistive Turn-Off Sw itching  
Tim e vs. Collector Current  
Fig. 14. Resistive Turn-off Sw itching  
Tim e vs. Gate Resistance  
200  
180  
160  
140  
120  
100  
80  
240  
220  
200  
180  
160  
140  
120  
100  
80  
t d(off)  
, t f  
t d(off)  
, t f  
- - - - -  
- - - - -  
T = 125ºC  
J
= 125ºC, V  
R
V
= 5Ω ,  
V
= 15V  
T
V
= 15V  
G
GE  
J
GE  
= 240V  
= 240V  
CE  
CE  
I
= 21A  
85A  
C
42.5A  
25ºC < T < 125ºC  
J
21A  
42.5A  
85A  
60  
= 25ºC  
T
J
40  
60  
20  
50  
0
30  
40  
50  
60  
70  
80  
90  
350  
40  
0
2
4
6
8
10 12 14 16 18 20  
I C - Amperes  
RG- Ohms  
Fig. 15. Reverse-Bias Safe  
Operating Area  
Fig. 16. Gate Charge  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
V
I
= 150V  
CE  
= 42.5A  
= 10mA  
C
G
I
6
= 150ºC  
T
J
4
R
= 20Ω  
G
dV/dT < 10V/ns  
2
0
100  
150  
200  
250  
300  
0
10  
20  
30  
40  
50  
60  
70  
80  
VC E - Volts  
Q G - nanoCoulombs  
Fig. 18. Maxim um Transient Therm al  
Resistance  
Fig. 17. Capacitance  
1.00  
10000  
1000  
100  
f = 1 MHz  
C
ies  
0.10  
C
C
oes  
res  
10  
0.01  
0.00001 0.0001 0.001  
5
10  
15  
20  
25  
30  
35  
0.01  
0.1  
1
10  
VC E - Volts  
Pulse Width - Seconds  
© 2006 IXYS CORPORATION, All rights reserved  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

 		IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

 		IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.195035s