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IXGN60N60C2

型号：

IXGN60N60C2

描述：

HiPerFASTTM的IGBT与二极管[ HiPerFASTTM IGBTs with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

156 K

下载PDF手册
HiPerFASTTM IGBTs  
with Diode  
VCES = 600V  
IC110 = 60A  
VCE(sat) ≤ 2.5V  
IXGN60N60C2  
IXGN60N60C2D1  
trr  
= 35ns  
C2-Class High Speed IGBTs  
E
SOT-227B, miniBLOC  
E153432  
E
60C2  
60C2D1  
Ec  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
G
TJ = 25°C to 150°C  
600  
600  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1 MΩ  
Ec  
VGES  
VGEM  
IC25  
Continuous  
±20  
±30  
75  
V
V
A
A
A
C
Transient  
TC = 25°C (Limited by Leads)  
TC = 110°C  
G = Gate, C = Collector, E = Emitter  
c Either Emitter Terminal can be used as  
Main or Kelvin Emitter  
IC110  
ICM  
60  
TC = 25°C, 1 ms  
300  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped Inductive Load  
ICM = 100  
A
V
Features  
(RBSOA)  
@ VCE ≤ 600  
z
International Standard Package  
PC  
TC = 25°C  
480  
W
miniBLOC  
Aluminium Nitride Isolation  
z
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
- High Power Dissipation  
z Anti-Parallel Ultra Fast Diode  
TJM  
Tstg  
z
Isolation Voltage 3000 V~  
Low VCE(sat) for Minimum On-State  
-55 ... +150  
z
VISOL  
50/60 Hz  
IISOL ≤ 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
Conduction Losses  
MOS Gate Turn-on  
z
- Drive Simplicity  
Low Collector-to-Case Capacitance  
(< 50 pF)  
Low Package Inductance (< 5 nH)  
Md  
Mounting Torque  
Terminal Connection Torque (M4)  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
z
z
Weight  
30  
g
- Easy to Drive and to Protect  
Applications  
z
AC Motor Speed Control  
DC Servo and Robot Drives  
DC Choppers  
Uninterruptible Power Supplies (UPS)  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z
z
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.0  
V
z
Switch-Mode and Resonant-Mode  
VCE = VCES  
VGE = 0V  
650  
5
μA  
mA  
Power Supplies  
TJ = 125°C  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±100  
2.5  
nA  
Advantages  
Easy to Mount with 2 Screws  
Space Savings  
High Power Density  
z
VCE(sat)  
IC = 50A, VGE = 15V, Note 1  
2.1  
1.8  
V
V
z
z
© 2009 IXYS CORPORATION, All Rights Reserved  
DS99177A(01/09)  
IXGN60N60C2  
IXGN60N60C2D1  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B miniBLOC  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 50A, VCE = 10V, Note 1  
40  
58  
S
Cies  
Coes  
Cres  
4750  
530  
65  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg  
146  
28  
nC  
nC  
nC  
Qge  
Qgc  
IC = 50A, VGE = 15V, VCE = 0.5 • VCES  
50  
td(on)  
tri  
td(off)  
tfi  
18  
25  
ns  
ns  
ns  
ns  
mJ  
Inductive load, TJ = 25°C  
IC = 50A, VGE = 15 V  
95  
150  
0.80  
VCE = 400V, RG = 2Ω  
35  
Eoff  
0.48  
td(on)  
tri  
18  
25  
ns  
ns  
Inductive load, TJ = 125°C  
Eon  
td(off)  
tfi  
0.90  
130  
80  
mJ  
ns  
IC = 50A, VGE = 15V  
V
CE = 400V, RG = 2Ω  
ns  
Eoff  
1.20  
mJ  
RthJC  
RthCS  
0.26 °C/W  
°C/W  
0.05  
Reverse Diode (FRED)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Oherwise Specified)  
Min. Typ.  
Max.  
IF = 60A, VGE = 0V, Note 1  
VF  
2.1  
V
V
TJ = 150°C  
TJ = 100°C  
1.4  
35  
IRM  
8.3  
A
IF = 60A, -di/dt = 100A/μs,  
VR = 100V, VGE = 0V,  
trr  
ns  
IF = 1A, -di/dt = 200A/μs, VR = 30V,VGE = 0V  
RthJC  
0.85 °C/W  
Note 1: PulseTest, t ≤ 300μs, Duty Cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGN60N60C2  
IXGN60N60C2D1  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
10 0  
90  
80  
70  
60  
50  
40  
30  
20  
10  
200  
17 5  
15 0  
12 5  
10 0  
75  
VGE = 15V  
VG E = 15V  
13V  
11V  
9V  
13V  
11V  
9V  
7V  
7V  
5V  
50  
5V  
3
25  
0
0
0.5  
0.5  
5
1
1.5  
2
2.5  
3.5  
1
25  
3.5  
1.5  
2
2.5  
VCE - Volts  
3
3.5  
4
4.5  
150  
8.5  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Temperature Dependence of VCE(sat)  
10 0  
90  
80  
70  
60  
50  
40  
30  
20  
10  
1. 2  
1. 1  
1
VG E = 15V  
13V  
11V  
9V  
VG E = 15V  
I C = 100A  
7V  
0.9  
0.8  
0.7  
0.6  
0.5  
I C = 50A  
I C = 25A  
5V  
0
1
1.5  
2
2.5  
3
3.5  
50  
75  
100  
125  
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
5
4.5  
4
200  
17 5  
15 0  
12 5  
10 0  
75  
º
T J = 25 C  
3.5  
3
2.5  
2
I C = 100A  
º
TJ= 125 C  
50  
50A  
25A  
º
25 C  
-40  
º
C
1. 5  
25  
1
0
6
7
8
9
10  
11 12 13  
14 15  
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGN60N60C2  
IXGN60N60C2D1  
Fig. 7. Transconductance  
Fig. 8. Dependence of Eoff on RG  
10 0  
90  
80  
70  
60  
50  
40  
30  
20  
10  
6
5
4
3
2
º
TJ = 125 C  
GE = 15V  
CE =400V  
I C = 100A  
I C= 75A  
V
V
º
TJ = -40 C  
º
25 C  
º
125 C  
I C = 50A  
I C = 25A  
1
0
0
2
4
6
8
10  
R G - Ohms  
12  
14  
16  
0
20  
0
25  
50  
75  
100  
125  
150  
175 200  
I C - Amperes  
Fig. 10. Dependence of Eoff on Temperature  
Fig. 9. Dependence of Eoff on IC  
5
4
3
2
5
4
3
2
R G= 2 Ohms  
RG = 10 Ohms - - - - -  
R G = 2 Ohms  
R G= 10 Ohms - - - - -  
I C = 100A  
VG E = 15V  
VC E = 400V  
VGE = 15V  
VCE = 400V  
º
TJ = 125 C  
I C = 75A  
I C = 50A  
º
TJ = 25 C  
1
1
I C = 25A  
0
0
30  
40  
50  
60  
70  
80  
90  
100  
25  
50  
75  
100  
125  
I C - Amperes  
TJ - Degrees Centigrade  
Fig. 11. Gate Charge  
Fig. 12. Capacitance  
10,000  
15  
12  
9
VC E = 300V  
I C = 50A  
I G = 10mA  
C
ies  
1,000  
C
oes  
6
100  
3
C
res  
f = 1 MHz  
0
10  
0
5
10  
15  
20  
25  
30  
35  
40  
20  
40  
60  
80  
100  
120  
140  
160  
VCE- Volts
Q G - nanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS REF: G_60N60C2(7Y)12-11-08-A  
IXGN60N60C2  
IXGN60N60C2D1  
160  
A
140  
4000  
nC  
80  
TVJ= 100°C  
VR = 300V  
TVJ= 100°C  
VR = 300V  
A
120  
100  
80  
60  
40  
20  
0
3000  
2000  
1000  
0
60  
IF= 120A, 60A, 30A  
IF  
IRM  
Qr  
TVJ= 150°C  
100°C  
IF= 120A, 60A, 30A  
40  
20  
0
25°C  
A/μs  
1000  
0
1
2
V
100  
1000  
0
200  
400  
600  
A/μs  
-diF/dt  
VF  
-diF/dt  
Fig. 13. Forward Current IF Versus VF  
2.0  
Fig. 14. Reverse Recorvery Charge Qr  
Versus -diF/dt  
Fig. 15. Peak Reverse Current IRM  
Versus -diF/dt  
140  
20  
1.6  
μs  
TVJ= 100°C  
TVJ= 100°C  
VR = 300V  
ns  
V
IF = 60A  
130  
VFR  
tfr  
trr  
trr  
1.5  
Kf  
15  
10  
5
1.2  
VFR  
120  
110  
100  
90  
IF= 30A, 60A, 120A  
1.0  
0.8  
0.4  
0.
IRM  
0.5  
QRM  
0.0  
80  
0
A/μs  
1000  
0
40  
80  
120  
160  
0
200  
400  
600  
1000  
A/μs  
0
200  
400  
600  
°C  
diF/dt  
TVJ  
-diF/dt  
Fig. 16. Dynamic Paraments Qr, IRM  
Versus TvJ  
Fig. 17. Recorvery Time trr Versus  
-diF/dt  
Fig. 18. Peak Forward Voltage VRM  
and trr Versus -diF/dt  
1.000  
0.100  
0.010  
0.001  
0.0001  
0.010.1
0.001  
1
10  
Pulse Width [ s ]  
Fig. 27. Maximum Transient Thermal Impedance (for diode)  
© 2009 IXYS CORPORATION, All Rights Reserved  
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