找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

2SK3892

型号:

2SK3892

描述:

硅N沟道功率MOSFET[ Silicon N-channel power MOSFET ]

品牌:

PANASONIC[ PANASONIC ]

页数:

4 页

PDF大小:

277 K

This product complies with the RoHS Directive (EU 2002/95/EC).  
Power MOSFETs  
2SK3892  
Silicon N-channel power MOSFET  
For contactless relay, diving circuit for a solenoid,  
driving circuit for a motor, control equipment and  
switching power supply  
Package  
Code  
Features  
TO-220D-A1  
Pin Name  
1: Gate  
Gate-source surrender voltage VGSS : ± 30 guaranteed  
Avalanche energy capacity guaranteed: EAS > 986 mJ  
High-speed switching: tf = 39 ns  
2: rain  
ce  
Absolute Maximum Ratings TC = 25°C  
Marking Symbol: K3892  
Parameter  
Drain-source surrender voltage  
Gate-source surrender voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Rating  
Unit  
V
2
Internal Connection  
V
D
22  
A
Peak drain current  
IDP  
88  
A
G
Avalanche energy capability *  
EAS  
986  
mJ  
W
W
°C  
°C  
40  
S
Drain power dissipaion  
PD  
T = 25°C  
a
2.0  
Junction temperature  
Storage mperaure  
150  
T
stg  
5 to +150  
Note) : L = 2.7 mH22 A, VDD = 50 V, 1 pulse  
*
Elecrical Chaistics TC = 25°C±3°C  
Drain-source surrend
Drain-source cutoff curret  
Gate-source cutoff current  
Gate threshold voltage  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
V
VDSS  
IDSS  
IGSS  
Vth  
ID = 1 mA, VG= 0  
200  
VDS = 160 V, VGS = 0  
VGS = ±30 V, VDS = 0  
VDS = 10 V, ID = 1.0 mA  
10  
±1.0  
4.5  
62  
mA  
mA  
V
2.5  
7
Drain-source ON resistance  
Forward transfer admittance  
RDS(on) VGS = 10 V, ID = 11.0A  
48  
15  
mW  
S
VDS = 10 V, ID = 11.0A  
Yfs  
Short-circuit input capacitance  
(Common source)  
Ciss  
3177  
456  
41  
pF  
pF  
pF  
Short-circuit output capacitance  
(Common source)  
Coss  
Crss  
VDS = 25 V, VGS = 0, f = 1 MHz  
Reverse transfer capacitance  
(Common source)  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
54  
60  
ns  
ns  
ns  
ns  
VDD = 100 V, ID = 11.0A  
RL = 9.1 W, VGS = 10 V  
Turn-off delay time  
Fall time  
194  
39  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: January 2009  
SJG00043BED  
1
This product complies with the RoHS Directive (EU 2002/95/EC).  
2SK3892  
Electrical Characteristics (continued) TC = 25°C±3°C  
Parameter  
Diode forward voltage  
Symbol  
VDSF  
trr  
Conditions  
IDR = 22A, VGS = 0  
Min  
Typ  
Max  
Unit  
V
-1.5  
Reverse recovery time  
Reverse recovery charge  
Gate charge load  
127  
756  
50  
ns  
L = 230 mH, VDD = 100 V  
IDR = 11.0A, di / dt = 100A/ms  
Qrr  
nC  
Qg  
nC  
Gate-source charge  
Qgs  
VDD = 100 V, ID = 11.0A, VGS = 10 V  
12  
nC  
Gate-drain charge  
Qgd  
18  
nC  
Thermal resistance (ch-c)  
Thermal resistance (ch-a)  
Rth(ch-c)  
Rth(ch-a)  
3.13  
62.5  
°C/W  
°C/W  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measurinmethods for transistors.  
2
SJG00043BED  
This product complies with the RoHS Directive (EU 2002/95/EC).  
2SK3892  
TO-220D-A1  
Unit: mm  
4.6 ±0.2  
2.9 ±0.2  
9.9 ±0.3  
3.2 ±0.1  
.4 ±0.
1.6 ±0
2.6 ±0.1  
0.8 ±0.1  
0.40 ±0.05  
2.54 ±0.3  
5.08 ±0.5  
1
2
3
SJG00043BED  
3
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any  
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any  
other company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office  
equipment, communications equipment, measuring instruments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support  
systems and safety devices) in which exceptional quality and reliability requied, or if the failure or malfunction of the prod-  
ucts may directly jeopardize life or harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this book are subjet to change wit notice for modification and/or im-  
provement. At the final stage of your design, purchasingr use of the roducts, therfor the most up-to-date Product  
Standards in advance to make sure that the latest specifictions stisfy your requirements.  
(5) When designing your equipment, comply with he ange f absolute maximing nd the guaranteed operating conditions  
(operating power supply voltage and operating nvirent etc.). Especiall, plee be ceful not to exceed the range of absolute  
maximum rating on the transient state, such as powpower-off and modeswitching. Otherwise, we will not be liable for any  
defect which may arise later in your equpmen
Even when the products are used withthe guaanteed values, kinto he cosideration of incidence of break down and failure  
mode, possible to occur to semiconductor products. Measures on the sytems such as redundant design, arresting the spread of fire  
or preventing glitch are recommin ordto prevent physicinjury, fre, social damaes, for example, by using the products.  
(6) Comply with the instructios for se in rder to prevent breakdwn and characteristics change due to external factors (ESD, EOS,  
thermal stress and mechanicastress) at the time of andlig, mounting or at customer's process. When using products for which  
damp-proof packinis reqired, stisfy the condtions, sch as shelf life and the elapsed time since first opening the packages.  
(7) This book may e not eprinted or reprodhethr wholly or partially, without the prior written permission of our company.  
2008080
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.202932s