Product specification
NX2301P
20 V, 2 A P-channel Trench MOSFET
Rev. 1 — 26 October 2010
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
1.8 V RDSon rated for Low Voltage Gate Drive
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
Tamb = 25 °C
Tamb = 25 °C
Min
Typ
Max
−20
±8
Unit
V
VDS
VGS
ID
drain-source voltage
-
-
-
-
-
-
gate-source voltage
drain current
V
[1]
[2]
Tamb = 25 °C;
VGS = −4.5 V
−2
A
RDSon
drain-source on-state
resistance
Tj = 25 °C;
VGS = −4.5 V;
ID = −1 A
-
100
120
mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s.
[2] Pulse test: tp ≤ 300 μs; δ ≤ 0.01.
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