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NX2301P

型号:

NX2301P

描述:

20 V ,2 A P沟道沟槽MOSFET沟道MOSFET技术继电器驱动器[ 20 V, 2 A P-channel Trench MOSFET Trench MOSFET technology Relay driver ]

品牌:

TYSEMI[ TY Semiconductor Co., Ltd ]

页数:

3 页

PDF大小:

228 K

Product specification  
NX2301P  
20 V, 2 A P-channel Trench MOSFET  
Rev. 1 — 26 October 2010  
Product data sheet  
1. Product profile  
1.1 General description  
P-channel enhancement mode Field-Effect Transistor (FET) in a small  
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using  
Trench MOSFET technology.  
1.2 Features and benefits  
„ 1.8 V RDSon rated for Low Voltage Gate Drive  
„ Very fast switching  
„ Trench MOSFET technology  
„ AEC-Q101 qualified  
1.3 Applications  
„ Relay driver  
„ High-speed line driver  
„ High-side loadswitch  
„ Switching circuits  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Conditions  
Tamb = 25 °C  
Tamb = 25 °C  
Min  
Typ  
Max  
20  
±8  
Unit  
V
VDS  
VGS  
ID  
drain-source voltage  
-
-
-
-
-
-
gate-source voltage  
drain current  
V
[1]  
[2]  
Tamb = 25 °C;  
VGS = 4.5 V  
2  
A
RDSon  
drain-source on-state  
resistance  
Tj = 25 °C;  
VGS = 4.5 V;  
ID = 1 A  
-
100  
120  
mΩ  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t 5 s.  
[2] Pulse test: tp 300 μs; δ ≤ 0.01.  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 3  
4008-318-123  
Product specification  
NX2301P  
20 V, 2 A P-channel Trench MOSFET  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Symbol  
Description  
gate  
Simplified outline  
Graphic symbol  
G
S
D
D
3
2
source  
drain  
3
G
1
2
S
017aaa094  
3. Ordering information  
Table 3.  
Ordering information  
Type number Package  
Name  
Description  
Version  
NX2301P  
TO-236AB plastic surface-mounted package; 3 leads  
SOT23  
4. Marking  
Table 4.  
Marking codes  
Type number  
Marking code[1]  
NX2301P  
MG*  
[1] * = placeholder for manufacturing site code  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol Parameter  
Conditions  
Tamb = 25 °C  
Tamb = 25 °C  
VGS = 4.5 V  
Tamb = 25 °C  
Tamb = 100 °C  
Min  
Max  
20  
±8  
Unit  
V
VDS  
VGS  
ID  
drain-source voltage  
-
-
gate-source voltage  
drain current  
V
[1]  
-
-
-
2  
A
A
A
1.2  
6  
IDM  
peak drain current  
Tamb = 25 °C;  
single pulse; tp 10 μs  
http://www.twtysemi.com  
sales@twtysemi.com  
2 of 3  
4008-318-123  
Product specification  
NX2301P  
20 V, 2 A P-channel Trench MOSFET  
Table 5.  
Limiting values …continued  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol Parameter  
Conditions  
Min  
Max  
400  
710  
2.8  
Unit  
mW  
mW  
W
[2]  
[1]  
Ptot  
total power dissipation  
Tamb = 25 °C  
-
-
-
Tsp = 25 °C  
Tj  
junction temperature  
ambient temperature  
storage temperature  
150  
+150  
+150  
°C  
Tamb  
Tstg  
55  
65  
°C  
°C  
Source-drain diode  
IS source current  
[1]  
Tamb = 25 °C  
-
0.7  
A
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t 5 s.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
http://www.twtysemi.com  
sales@twtysemi.com  
3 of 3  
4008-318-123  
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