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IXGN400N30A3

型号：

IXGN400N30A3

描述：

超低甚小孔径终端PT IGBT高达10kHz的开关[ Ultra-Low-Vsat PT IGBT for up to 10kHz Switching ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

174 K

下载PDF手册
GenX3TM 300V IGBT  
VCES = 300V  
IC25 = 400A  
VCE(sat) ≤ 1.15V  
IXGN400N30A3  
Ultra-Low-Vsat PT IGBT for  
up to 10kHz Switching  
E
SOT-227B, miniBLOC  
E153432  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
300  
300  
V
V
E c  
TJ = 25°C to 150°C, RGE = 1MΩ  
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
TC = 25°C (Chip Capability)  
TC = 110°C  
Terminal Current Limit  
400  
200  
A
A
A
A
E c  
IC110  
ILRMS  
ICM  
C
200  
G = Gate, C = Collector, E = Emitter  
TC = 25°C, 1ms  
1200  
cEither Emitter Terminal Can Be Used  
as Main or Kelvin Emitter  
SSOA  
V
GE= 15V, TVJ = 125°C, RG = 1Ω  
ICM = 400  
A
V
(RBSOA)  
Clamped Inductive Load  
@ 0.8 • VCES  
PC  
TJ  
TC = 25°C  
735  
W
Features  
-55 ... +150  
°C  
z Optimized for Low Conduction Losses  
z High Current Capability  
z International Standard Package  
z miniBLOC, with Aluminium Nitride  
Isolation  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
VISOL  
50/60Hz  
IISOL ≤ 1mA  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
Md  
Mounting Torque  
Terminal Connection Torque (M4)  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Advantages  
Weight  
30  
g
z High Power Density  
z Low Gate Drive Requirement  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z Power Inverters  
z UPS  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
300  
3.0  
Typ.  
Max.  
z Motor Drives  
BVCES  
VGE(th)  
ICES  
IC = 1mA, VGE = 0V  
IC = 4mA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
z Inrush Current Protection Circuits  
5.0  
50 μA  
TJ = 125°C  
2 mA  
IGES  
VCE = 0V, VGE = ±20V  
±400 nA  
VCE(sat)  
IC = 100A, VGE = 15V, Note 1  
IC = 400A  
1.15  
V
V
1.70  
DS99592B(7/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGN400N30A3  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B miniBLOC (IXGN)  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
100  
170  
S
Cies  
Coes  
Cres  
19  
1350  
190  
nF  
pF  
pF  
Qg(on)  
Qge  
560  
83  
nC  
C
IC = 100V, VGE = 15V, VCE = 0.5 • VCES  
Qgc  
185  
nC  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
45  
45  
ns  
ns  
ns  
ns  
Resistive Load, TJ = 25°C  
IC = 100A, VGE = 15V  
210  
107  
VCE = 0.8 • VCES, RG = 1Ω  
47  
53  
ns  
ns  
ns  
ns  
Resistive Load, TJ = 125°C  
IC = 100A, VGE = 15V  
240  
315  
VCE = 0.8 • VCES, RG = 1Ω  
RthJC  
RthCK  
0.17 °C/W  
°C/W  
0.05  
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGN400N30A3  
Fig. 1. Output Characteristics  
@ TJ = 25ºC  
Fig. 2. Output Characteristics  
@ TJ = 125ºC  
300  
250  
200  
150  
100  
50  
350  
300  
250  
200  
150  
100  
50  
VGE = 15V  
VGE = 15V  
11V  
9V  
11V  
9V  
7V  
7V  
5V  
5V  
0
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
0.0  
-50  
4.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
150  
6.8  
VCE - Volts  
VCE - Volts  
Fig. 4. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 3. Dependence of VCE(sat) on  
Junction Temperature  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
TJ = 25ºC  
VGE = 15V  
I C = 300A  
I C = 300A  
200A  
100A  
I C = 200A  
I C = 100A  
5
6
7
8
9
10  
11  
12  
13  
14  
15  
-25  
0
25  
50  
75  
100  
125  
VGE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Input Admittance  
Fig. 6. Transconductance  
280  
240  
200  
160  
120  
80  
350  
300  
250  
200  
150  
100  
50  
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
25ºC  
- 40ºC  
125ºC  
40  
0
0
0
40  
80  
120  
160  
200  
240  
280  
4.4  
4.8  
5.2  
5.6  
6.0  
6.4  
IC - Amperes  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGN400N30A3  
Fig. 8. Capacitance  
Fig. 7. Gate Charge  
16  
14  
12  
10  
8
100,000  
10,000  
1,000  
100  
VCE = 150V  
C = 100A  
I G = 10 mA  
= 1 MHz  
f
I
C
C
ies  
oes  
6
4
C
res  
2
0
0
5
10  
15  
20  
25  
30  
35  
40  
0
100  
200  
300  
400  
500  
600  
VCE - Volts  
QG - NanoCoulombs  
Fig. 10. Maximum Transient Thermal Impedance  
Fig. 9. Reverse-Bias Safe Operating Area  
1.000  
0.100  
0.010  
0.001  
450  
400  
350  
300  
250  
200  
150  
100  
50  
TJ = 125ºC  
RG = 1Ω  
dv / dt < 10V / ns  
0
25  
75  
125  
175  
225  
275  
325  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
VCE - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGN400N30A3  
Fig. 11. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 12. Resistive Turn-on Rise Time  
vs. Collector Current  
56  
54  
52  
50  
48  
46  
44  
56  
54  
52  
50  
48  
46  
44  
RG = 1ꢀ , VGE = 15V  
CE = 240V  
I C = 300A, 200A, 100A  
V
TJ = 125ºC  
RG = 1ꢀ , VGE = 15V  
CE = 240V  
V
TJ = 25ºC  
100  
120  
140  
160  
180  
200  
220  
240  
260  
280  
300  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 13. Resistive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 14. Resistive Turn-off Switching Times  
vs. Junction Temperature  
130  
120  
110  
100  
90  
80  
76  
72  
68  
64  
60  
56  
52  
48  
44  
40  
400  
350  
300  
250  
200  
150  
100  
50  
250  
240  
230  
220  
210  
200  
190  
180  
t f  
t
d(off) - - - -  
RG = 1ꢀ, VGE = 15V  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGE = 15V  
V
CE = 240V  
V
CE = 240V  
I C = 200A, 100A  
80  
I C = 300A, 200A, 100A  
70  
60  
50  
40  
30  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times  
vs. Collector Current  
350  
300  
250  
200  
150  
100  
50  
240  
230  
220  
210  
200  
190  
180  
380  
360  
340  
320  
300  
280  
260  
240  
220  
200  
180  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
t f  
t
d(off) - - - -  
t f  
t
d(off) - - - -  
TJ = 125ºC, VGE = 15V  
RG = 1ꢀ, VGE = 15V  
VCE = 240V  
VCE = 240V  
TJ = 125ºC  
I C = 100A  
I C = 200A, 300A  
TJ = 25ºC  
100  
120  
140  
160  
180  
200  
220  
240  
260  
280  
300  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
IC - Amperes  
IXYS REF: G_400N30A3(96)11-18-08-A  
© 2009 IXYS CORPORATION, All Rights Reserved  
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