请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGR72N60B3H1

型号：

IXGR72N60B3H1

描述：

GenX3 600VIGBT W /二极管电气绝缘标签[ GenX3 600VIGBT W/ Diode Electrically Isolated Tab ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

249 K

下载PDF手册
TM  
VCES  
IC110  
VCE(sat)  
tfi(typ)  
= 600V  
= 40A  
£ 1.80V  
= 92ns  
GenX3 600V IGBT  
IXGR72N60B3H1  
w/ Diode  
(Electrically Isolated Tab)  
Medium Speed Low Vsat PT IGBT  
for 5-40 kHz Switching  
ISOPLUS247TM  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
600  
600  
V
V
G
VCGR  
TJ = 25C to 150C, RGE = 1M  
C
E
Isolated Tab  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
G = Gate  
C
= Collector  
IC25  
IC110  
IF110  
ICM  
TC = 25C (Limited by Leads)  
TC = 110C  
TC = 110C  
75  
40  
A
A
A
A
E = Emitter  
34  
TC = 25C, 1ms  
450  
Features  
SSOA  
VGE = 15V, TVJ = 125C, RG = 3  
ICM = 240  
A
(RBSOA)  
Clamped Inductive Load  
VCE VCES  
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
Optimized for Low Conduction and  
Switching Losses  
2500V~ Electrical Isolation  
Square RBSOA  
Anti-Parallel Ultra Fast Diode  
PC  
TC = 25C  
200  
W
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
VISOL  
FC  
50/60 Hz, 1 Minute  
Mounting Force  
2500  
V~  
20..120/4.5..27  
N/lb  
TL  
Maximum Lead Temperature for Soldering  
1.6mm (0.062 in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
TSOLD  
High Power Density  
Low Gate Drive Requirement  
Weight  
5
g
Applications  
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VGE(th)  
ICES  
IC = 250A, VCE = VGE  
3.0  
5.0  
V
VCE = VCES, VGE = 0V  
300 A  
mA  
TJ = 125C  
5
IGES  
VCE = 0V, VGE = 20V  
100 nA  
VCE(sat)  
IC = 60A, VGE = 15V, Note 1  
IC = 120A  
1.50  
1.75  
1.80  
V
V
DS99875B(7/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXGR72N60B3H1  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS247 (IXGR) Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 50A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
45  
76  
S
Cies  
Coes  
Cres  
6800  
576  
80  
pF  
pF  
pF  
Qg  
225  
40  
nC  
nC  
nC  
Qge  
Qgc  
IC = 60A, VGE = 15V, VCE = 0.5 • VCES  
82  
td(on)  
tri  
31  
33  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 50A, VGE = 15V  
1
2
3
- Gate  
- Collector  
- Emitter  
Eon  
td(off)  
tfi  
1.4  
152  
92  
mJ  
ns  
VCE = 480V, RG = 3  
240  
150  
2.0  
ns  
Note 2  
Eoff  
1.0  
mJ  
td(on)  
tri  
29  
34  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 50A, VGE = 15V  
Eon  
td(off)  
tfi  
2.7  
228  
142  
2.2  
mJ  
ns  
VCE = 480V, RG = 3  
Note 2  
ns  
Eoff  
mJ  
RthJC  
RthCS  
0.62 C/W  
C/W  
0.15  
Reverse Diode (FRED)  
(Symbol Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 60A, VGE = 0V, Note 1  
1.6  
1.4  
2.3  
1.8  
V
V
TJ = 150°C  
TJ = 100°C  
IRM  
IF = 60A, VGE = 0V,  
8.3  
A
-diF/dt = 200A/μs, VR = 300V  
trr  
IF = 60A, -di/dt = 200A/μs, VR = 300V, TJ = 100°C  
140  
ns  
RthJC  
0.80 °C/W  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGR72N60B3H1  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
120  
100  
80  
60  
40  
20  
0
V
= 15V  
GE  
V
= 15V  
GE  
300  
250  
200  
150  
100  
50  
13V  
11V  
13V  
11V  
9V  
7V  
9V  
7V  
0
0
1
2
3
4
5
6
7
8
0.0  
0.0  
5
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.5  
15  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
120  
100  
80  
60  
40  
20  
0
V
= 15V  
GE  
V
= 15V  
GE  
13V  
11V  
9V  
I
I
= 120A  
= 60A  
C
C
7V  
5V  
I
= 30A  
100  
C
-50  
-25  
0
25  
50  
75  
125  
150  
0.5  
1.0  
1.5  
2.0  
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
180  
160  
140  
120  
100  
80  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
T
= 25ºC  
J
I
= 120A  
C
60A  
30A  
T
J
= 125ºC  
60  
25ºC  
- 40ºC  
40  
20  
0
6
7
8
9
10  
11  
12  
13  
14  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
VGE - Volts  
VGE - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXGR72N60B3H1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
16  
14  
12  
10  
8
T
J
= - 40ºC  
120  
100  
80  
60  
40  
20  
0
V
= 300V  
CE  
I
I
= 60A  
C
G
= 10mA  
25ºC  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0
20  
40  
60  
80  
100 120 140 160 180 200 220 240  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
280  
240  
200  
160  
120  
80  
10,000  
1,000  
100  
C
ies  
C
oes  
T
= 125ºC  
J
C
res  
25  
R
= 3Ω  
G
40  
dv / dt < 10V / ns  
f
= 1 MHz  
5
0
10  
100  
200  
300  
400  
500  
600  
0
10  
15  
20  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_72N60B3(76)02-10-09-D  
IXGR72N60B3H1  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
E
R
E
on - - - -  
off  
= 3ꢀ V  
  
= 15V  
G
GE  
I
=100A  
C
V
= 480V  
CE  
T
J
= 125ºC  
E
E
on - - - -  
off  
T
J
= 125ºC , V = 15V  
GE  
I
I
= 50A  
= 25A  
C
C
V
= 480V  
CE  
T
J
= 25ºC  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
IC - Amperes  
RG - Ohms  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
7
7
6
5
4
3
2
1
0
240  
220  
200  
180  
160  
140  
120  
100  
80  
1300  
1150  
1000  
850  
I C = 25A, 50A, 100A  
6
5
4
3
2
1
0
I
= 100A  
C
I C = 100A  
700  
E
R
E
on - - - -  
off  
I C = 50A  
= 3ꢀ  
V
= 15V  
GE  
  
G
I
= 50A  
550  
C
V
= 480V  
CE  
400  
t f i  
td(off)  
- - - -  
I C = 25A  
250  
T
J
= 125ºC, VGE = 15V  
VCE = 480V  
I
= 25A  
C
100  
0
5
10  
15  
20  
25  
30  
35 40  
45  
50  
55  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
220  
200  
180  
160  
140  
120  
100  
80  
260  
245  
230  
215  
200  
185  
170  
155  
140  
230  
210  
190  
170  
150  
130  
110  
90  
250  
235  
220  
205  
190  
175  
160  
145  
130  
T
J
= 125ºC  
t f i  
t
d(off) - - - -  
I
= 25A, 50A, 100A  
C
R
G
= 3ꢀ , V = 15V  
GE  
V
= 480V  
CE  
t r i  
td(off)  
- - - -  
R
G
= 3 , V = 15V  
ꢀ  
GE  
T
J
= 25ºC  
70  
V
= 480V  
CE  
60  
70  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
20  
30  
40  
50  
60  
80  
90  
100  
TJ - Degrees Centigrade  
IC - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXGR72N60B3H1  
Fig. 19. Inductive Turn-on Switching Times vs.  
Collector Current  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
170  
150  
130  
110  
90  
140  
125  
110  
95  
90  
80  
70  
60  
50  
40  
30  
20  
10  
34  
33  
32  
31  
30  
29  
28  
27  
26  
t r i  
t
d(on) - - - -  
t r i  
td(on)  
- - - -  
T
J
= 125ºC, V = 15V  
GE  
R
G
= 3Ω , V = 15V  
GE  
V
= 480V  
CE  
V
= 480V  
CE  
I
= 100A  
T
J
= 25ºC, 125ºC  
C
80  
25ºC < T < 125ºC  
J
70  
65  
I
= 50A  
C
50  
50  
30  
35  
I
= 25A  
20  
C
10  
20  
0
5
10  
15  
25  
30  
35  
40  
45  
50  
55  
20  
30  
40  
50  
60  
70  
80  
90  
100  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
100  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
I
= 100A  
C
t r i  
td(on  
) - - - -  
R
G
= 3 , V = 15V  
ꢀ  
GE  
V
= 480V  
CE  
I
= 50A  
C
I
= 25A  
75  
C
25  
35  
45  
55  
65  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_72N60B3(76)02-10-09-D  
IXGR72N60B3H1  
Fig. 22 Typ. Reverse Recovery  
Charge Qrr  
Fig. 23 Typ. Peak Reverse  
Current IRM  
Fig. 21 Forward Current IF vs. VF  
Fig. 24 Typ. Dynamic Parameters  
Qrr, IRM  
Fig. 25 Typ Recovery Time trr  
1
0.1  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
Pulse Width [s]  
Fig. 26 Maximum Transient Thermal Impedance Junction to Case (for Diode)  
© 2013 IXYS CORPORATION, All Rights Reserved  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

 		IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

 		IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.235230s