SMD Type
MOSFET
Product specification
2SK3456
TO-263
Unit: mm
Features
+0.2
4.57
-0.2
+0.1
1.27
-0.1
Low gate charge
QG = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A)
Gate voltage rating 30 V
Low on-state resistance
+0.1
-0.1
0.1max
1.27
RDS(on) = 0.60
MAX. (VGS = 10 V, ID = 6.0 A)
+0.1
0.81
-0.1
Avalanche capability ratings
2.54
1 Gate
+0.2
2.54
-0.2
Surface mount package available
+0.1
5.08
-0.1
+0.2
0.4
-0.2
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
500
Gate to source voltage
V
30
12
A
Drain current
Idp *
A
36
100
Power dissipation
TC=25
TA=25
PD
W
1.5
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Symbol
IDSS
IGSS
VGS(off)
Yfs
Testconditons
Min
Typ
Max
10
Unit
A
VDS=500V,VGS=0
VGS= 30V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=6.0A
VGS=10V,ID=6.0A
100
3.5
A
2.5
2.0
V
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
S
RDS(on)1
Ciss
Coss
Crss
ton
0.48 0.60
1620
250
10
24
18
50
15
30
9
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS=10V,VGS=0,f=1MHZ
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
tr
ID=6.0A,VGS(on)=10V,RG=10
,VDD=150V
Turn-off delay time
Fall time
toff
tf
Total Gate Charge
QG
ID =12A, VDD =400V, VGS = 10 V
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
11
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