S
M
D
T
y
p
e
IC
Product specification
2SK3634
TO-252
Unit: mm
+0.15
-0.15
+0.1
2.30
-0.1
6.50
Features
+0.2
5.30
-0.2
+0.8
0.50
-0.7
High voltage: VDSS = 200 V
Gate voltage rating: 30 V
0.127
max
RDS(on) = 0.60
MAX. (VGS = 10 V, ID = 3.0 A)
+0.1
0.80
-0.1
Low Ciss: Ciss = 270 pF TYP. (VDS = 10 V, VGS = 0 V)
Built-in gate protection diode
+0.1
0.60
-0.1
2.3
4.60
1 Gate
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
200
Gate to source voltage
V
30
A
6.0
18
Drain current
Idp *
A
20
Power dissipation
TC=25
TA=25
PD
W
1.0
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Symbol
IDSS
Testconditons
Min
Typ
Max
10
Unit
A
VDS=200V,VGS=0
VGS= 30V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=3.0A
VGS=10V,ID=3.0A
IGSS
10
A
VGS(off)
2.5
2
3.5
4
4.5
V
S
Yfs
RDS(on)
Ciss
Coss
Crss
ton
0.47 0.60
270
75
33
4
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS=10V,VGS=0,f=1MHZ
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
tr
8
ID=3.0A,VGS(on)=10V,RG=0 ,VDD=100V
Turn-off delay time
Fall time
toff
14
6
tf
Total Gate Charge
QG
9
VDD = 160V
VGS = 10 V
ID = 6.0A
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
1.5
4.5
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