SS
MM
DD
TTyy
pp
ee
TraMnOsiSstFIIoCCErsT
Product specification
2SK3716
TO-252
Unit: mm
+0.15
-0.15
+0.1
2.30
-0.1
6.50
+0.2
5.30
-0.2
+0.8
0.50
-0.7
Features
Super low on-state resistance:
RDS(on)1 = 6.5 mÙ MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 9.1 mÙ MAX. (VGS = 4.5 V, ID = 30 A)
Low Ciss: Ciss = 2700 pF TYP.
0.127
max
+0.1
0.80
-0.1
Built-in gate protection diode
+0.1
0.60
-0.1
2.3
4.60
1 Gate
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
40
20
Gate to source voltage
V
A
60
Drain current
Idp *
A
240
1.0
Power dissipation
TA=25
TC=25
PD
W
84
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Symbol
IDSS
Testconditons
Min
Typ
Max
10
Unit
A
VDS=40V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=30A
VGS=10V,ID=30A
VGS=4.5V,ID=30A
Gate leakage current
Gate cut off voltage
IGSS
10
A
VGS(off)
Yfs
1.5
22
2.0
43
2.5
V
Forward transfer admittance
S
RDS(on)1
5.2
6.6
6.5
9.1
mÙ
mÙ
Drain to source on-state resistance
RDS(on)2
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
ton
2700
770
290
11
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS=10V,VGS=0,f=1MHZ
tr
13
ID=30A,VGS(on)=10V,RG=0 ,VDD=20V
Turn-off delay time
Fall time
toff
69
tf
14
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
50
VDD = 32V
VGS = 10 V
ID =60A
9
13
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