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IXGF30N400

型号：

IXGF30N400

描述：

高电压IGBT电容器放电应用[ High Voltage IGBT For Capacitor Discharge Applications ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

199 K

下载PDF手册
High Voltage IGBT  
For Capacitor Discharge  
Applications  
VCES = 4000V  
IC25 = 30A  
VCE(sat) ≤ 3.1V  
IXGF30N400  
( Electrically Isolated Tab)  
ISOPLUS i4-PakTM  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
4000  
V
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
1
2
Isolated Tab  
5
IC25  
IC110  
ICM  
TC = 25°C  
30  
15  
A
A
A
1 = Gate  
2 = Emitter  
5 = Collector  
TC = 110°C  
TC = 25°C, VGE = 20V, 1ms  
360  
SSOA  
(RBSOA)  
PC  
V
GE= 20V, TVJ = 125°C, RG = 2Ω  
ICM = 300  
VCE ≤ 0.8 • VCES  
160  
A
Clamped Inductive Load  
TC = 25°C  
Features  
W
ꢀ
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
4000V Electrical Isolation  
High Peak Current Capability  
Low Saturation Voltage  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
-55 ... +150  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
Molding Epoxies Meet UL 94 V-0  
Flammability Classification  
FC  
Mounting Force  
20..120 / 4.5..27  
Nm/lb.in.  
VISOL  
Weight  
50/60Hz, 1 minute  
4000  
5
V~  
g
Advantages  
ꢀ
High Power Density  
Easy to Mount  
ꢀ
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
4000  
3.0  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = 0.8 • VCES, VGE = 0V  
V
5.0  
V
ꢀ
Capacitor Discharge  
Pulser Circuits  
50 μA  
ꢀ
Note 2, TJ = 100°C  
3
mA  
IGES  
VCE = 0V, VGE = ±20V  
±200 nA  
VCE(sat)  
IC = 30A, VGE = 15V, Note 1  
IC = 90A  
3.1  
5.2  
V
V
DS99978C(11/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGF30N400  
ISOPLUS i4-PakTM (HV) Outline  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 30A, VCE = 10V, Note 1  
VGE = 15V, VCE = 20V, Note 1  
14  
23  
S
A
IC(ON)  
360  
Cies  
Coes  
Cres  
3040  
95  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
IC = 30A, VGE = 15V, VCE = 600V  
30  
Qg  
135  
22  
nC  
nC  
nC  
Qge  
Qgc  
50  
td(on)  
tr  
td(off)  
tf  
55  
146  
210  
514  
ns  
ns  
ns  
ns  
Pin 1 = Gate  
Resistive Switching Times  
IC = 30A, VGE = 15V,  
Pin 2 = Emitter  
Pin 3 = Collector  
Tab 4 = Isolated  
VCE = 1250V, RG = 2Ω  
RthJC  
RthCS  
RthJA  
0.78 °C/W  
°C/W  
0.15  
30  
°C/W  
Notes:  
1. Pulse test, t < 300μs, duty cycle, d < 2%.  
2. Device must be heatsunk for high-temperature leakage current  
measurements to avoid thermal runaway.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGF30N400  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ =25ºC  
400  
360  
320  
280  
240  
200  
160  
120  
80  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
VGE = 15V  
13V  
11V  
13V  
9V  
7V  
11V  
9V  
7V  
5V  
40  
5V  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
6.0  
15  
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ =125ºC  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
VGE = 15V  
13V  
11V  
9V  
7V  
I C = 60A  
I C = 30A  
5V  
I C = 15A  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = 25ºC  
I C = 60A  
TJ = 125ºC  
25ºC  
- 40ºC  
30A  
15A  
13  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
5
6
7
8
9
10  
11  
12  
14  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGF30N400  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
16  
14  
12  
10  
8
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
VCE = 600V  
I
I
C = 30A  
G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
0
20  
40  
60  
80  
100  
120  
140  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Capacitance  
Fig. 9. Reverse-Bias Safe Operating Area  
350  
300  
250  
200  
150  
100  
50  
10,000  
1,000  
100  
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
G = 2Ω  
dV / dt < 10V / ns  
R
C
res  
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
400  
800  
1200  
1600  
2000  
2400  
2800  
3200  
3600  
4000  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGF30N400  
Fig. 12. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 13. Resistive Turn-on  
Rise Time vs. Drain Current  
500  
450  
400  
350  
300  
250  
200  
150  
100  
500  
450  
400  
350  
300  
250  
200  
150  
100  
RG = 2ꢀ , VGE = 15V  
CE = 1250V  
V
T
J
= 125ºC  
I
= 60A  
D
RG = 2ꢀ , VGE = 15V  
CE = 1250V  
V
I
= 30A  
D
T
J
= 25ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
TJ - Degrees Centigrade  
IC - Amperes  
Fig. 14. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 15. Resistive Turn-off  
Switching Times vs. Junction Temperature  
10,000  
1,000  
100  
1,000  
600  
550  
500  
450  
400  
350  
300  
250  
200  
250  
240  
230  
220  
210  
200  
190  
180  
170  
t r  
TJ = 125ºC, VGE = 15V  
CE = 1250V  
td(on)  
- - - -  
t f  
RG = 2ꢀ, VGE = 15V  
CE = 1250V  
td(off)  
- - - -  
V
V
I C = 30A  
I
= 60A, 30A  
C
100  
I C = 60A  
10  
1000  
1
10  
100  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 17. Resistive Turn-off  
Switching Times vs. Gate Resistance  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
260  
250  
240  
230  
220  
210  
200  
190  
180  
170  
160  
10,000  
1,000  
100  
10,000  
1,000  
100  
t f  
TJ = 125ºC, VGE = 15V  
CE = 1250V  
td(off)  
t f  
RG = 2ꢀ, VGE = 15V  
CE = 1250V  
td(off)  
- - - -  
- - - -  
V
V
I
= 30A  
C
I
= 60A  
T
= 125ºC, 25ºC  
C
J
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
1
10  
100  
1000  
IC - Amperes  
RG - Ohms  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_30N400(8P)11-23-09-C  
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