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IXGN50N120C3H1

型号：

IXGN50N120C3H1

描述：

高速PT IGBT为20-50 kHz开关[ High-Speed PT IGBT for 20-50 kHz Switching ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

196 K

下载PDF手册
Advance Technical Information  
GenX3TM 1200V  
IGBT w/ Diode  
VCES  
IC110  
VCE(sat)  
= 1200V  
= 50A  
≤£ 4.2V  
IXGN50N120C3H1  
High-Speed PT IGBT for  
20-50 kHz Switching  
SOT-227B, miniBLOC  
E153432  
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
Maximum Ratings  
E c  
1200  
1200  
±20  
±30  
95  
V
V
V
V
A
G
VCGR  
VGES  
VGEM  
IC25  
IC110  
IF110  
Transient  
E c  
TC = 25°C  
TC = 110°C  
TC = 110°C  
C
50  
58  
A
A
G = Gate, C = Collector, E = Emitter  
c
either emitter terminal can be used as  
Main or Kelvin Emitter  
ICM  
TC = 25°C, 1ms  
240  
ICM = 100  
VCE ≤ VCES  
460  
A
SSOA  
(RBSOA)  
PC  
VGE= 15V, TVJ = 125°C, RG = 2Ω  
Clamped Inductive Load  
TC = 25°C  
A
W
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z Optimized for Low Switching Losses  
z Square RBSOA  
z High Current Capability  
z Isolation Voltage 2500V~  
z Anti-Parallel Ultra Fast Diode  
z International Standard Package  
TJM  
Tstg  
VISOL  
-55 ... +150  
50/60Hz  
IISOL ≤ 1mA  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Weight  
30  
g
Advantages  
z High Power Density  
z Low Gate Drive Requirement  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z Power Inverters  
z UPS  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z SMPS  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.0  
V
z PFC Circuits  
z Welding Machines  
z Lamp Ballasts  
VCE = VCES, VGE= 0V  
250 μA  
TJ = 125°C  
14 mA  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC  
= 40A, VGE = 15V, Note 1  
TJ = 125°C  
4.2  
V
V
2.6  
DS100246(03/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGN50N120C3H1  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B miniBLOC (IXGN)  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 40A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
24  
40  
S
Cies  
Coes  
Cres  
4250  
455  
pF  
pF  
pF  
120  
Qg  
196  
24  
nC  
nC  
nC  
Qge  
Qgc  
IC = 50A, VGE = 15V, VCE = 0.5 • VCES  
84  
td(on)  
tri  
Eon  
td(off)  
tfi  
31  
36  
ns  
ns  
mJ  
ns  
ns  
Inductive load, TJ = 25°C  
2.0  
123  
64  
IC = 40A, VGE = 15V  
VCE = 0.5 • VCES, RG = 2Ω  
Note 2  
Eoff  
0.63  
1.2 mJ  
td(on)  
tri  
23  
37  
ns  
ns  
Inductive load, TJ = 125°C  
Eon  
td(off)  
tfi  
3.0  
170  
315  
2.1  
mJ  
ns  
IC = 40A, VGE = 15V  
VCE = 0.5 • VCES, RG = 2Ω  
Note 2  
ns  
Eoff  
mJ  
RthJC  
RthCK  
0.27 °C/W  
°C/W  
0.05  
Reverse Diode (FRED)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 50A, VGE = 0V, Note 1  
2.1  
2.4  
2.3  
V
V
TJ = 125°C  
IRM  
50  
75  
A
IF = 50A, VGE = 0V,  
-diF/dt = 2500A/μs, VR = 800V  
trr  
ns  
0.30 °C/W  
RthJC  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGN50N120C3H1  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
275  
250  
225  
200  
175  
150  
125  
100  
75  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
13V  
VGE = 15V  
13V  
11V  
11V  
9V  
9V  
7V  
7V  
5V  
50  
25  
5V  
0
0
1
2
3
4
5
6
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
VGE = 15V  
13V  
11V  
VGE = 15V  
9V  
7V  
I C = 100A  
I C = 50A  
I C = 25A  
5V  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
8.0  
7.5  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
TJ = 25ºC  
I C = 100A  
TJ = 125ºC  
25ºC  
- 40ºC  
50A  
25A  
5
6
7
8
9
10  
11  
12  
13  
14  
15  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
VGE - Volts  
VGE - Volts  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGN50N120C3H1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 600V  
I
I
C = 50A  
G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
100  
80  
60  
40  
20  
0
C
ies  
C
C
oes  
res  
TJ = 125ºC  
G = 2Ω  
R
= 1 MHz  
5
f
dv / dt < 10V / ns  
10  
0
10  
15  
20  
25  
30  
35  
40  
200  
400  
600  
800  
1000  
1200  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGN50N120C3H1  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
8
7
6
5
4
3
2
1
0
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
11  
10  
9
E
E
on - - - -  
VGE = 15V  
off  
RG = 2  
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
CE = 600V  
Ω ,  
VCE = 600V  
V
TJ = 125ºC  
8
I C = 80A  
7
6
5
TJ = 25ºC  
I C = 40A  
4
3
2
20  
30  
40  
50  
60  
70  
80  
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
600  
550  
500  
450  
400  
350  
300  
250  
200  
150  
100  
4.0  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
10  
t f i  
t d(off)  
- - - -  
E
E
on - - - -  
off  
RG = 2Ω VGE = 15V  
9
8
7
6
5
4
3
2
1
0
TJ = 125ºC, GE = 15V  
V
,
VCE = 600V  
VCE = 600V  
I C = 80A  
I C = 40A  
I C = 40A  
I C = 80A  
0
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
450  
400  
350  
300  
250  
200  
150  
100  
50  
260  
350  
300  
250  
200  
150  
100  
50  
180  
170  
160  
150  
140  
130  
120  
110  
tf i  
RG = 2Ω , VGE = 15V  
CE = 600V  
td(off)  
- - - -  
t f i  
td(off)  
- - - -  
240  
220  
200  
180  
160  
140  
120  
100  
80  
RG = 2Ω , VGE = 15V  
I
= 40A  
C
V
VCE = 600V  
TJ = 125ºC  
I C = 80A  
TJ = 25ºC  
70  
0
0
20  
30  
40  
50  
60  
80  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
IC - Amperes  
TJ - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGN50N120C3H1  
Fig. 19. Inductive Turn-on Switching Times vs.  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
td(on)  
- - - -  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
34  
32  
30  
28  
26  
24  
22  
20  
18  
16  
14  
180  
160  
140  
120  
100  
80  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
tr i  
RG = 2Ω , VGE = 15V  
CE = 600V  
tr i  
t d(on) - - - -  
TJ = 125ºC, VGE = 15V  
VCE = 600V  
TJ = 125ºC, 25ºC  
V
I C = 80A  
I C = 40A  
60  
40  
20  
0
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
20  
30  
40  
50  
IC - Amperes  
60  
70  
80  
RG - Ohms  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
Fig. 21. Forward Current vs. Forward Voltage  
80  
70  
60  
50  
40  
30  
20  
10  
0
140  
120  
100  
80  
32  
30  
28  
26  
24  
22  
20  
tr i  
RG = 2Ω , VGE = 15V  
CE = 600V  
td(on)  
- - - -  
V
I C = 80A  
T
= 125ºC  
J
60  
T
= 25ºC  
I C = 40A  
J
40  
20  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
TJ - Degrees Centigrade  
VF - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_50N120C3H1(7N)03-01-10-A  
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