2SK3695-01
FUJI POWER MOSFET
200309
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings [mm]
Features
TO-220AB
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol Ratings
Unit
V
Remarks
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-Repetitive
VDS
ID
500
±13
±52
±30
13
A
ID(puls]
VGS
IAS
A
V
<
A
Tch 150°C
=
Equivalent circuit schematic
Maximum avalanche current
Non-Repetitive
EAS
202
mJ
*1
Maximum avalanche energy
Maximum Drain-Source dV/dt
Peak diode recovery dV/dt
Peak diode recovery -di/dt
Max. power dissipation
Drain(D)
<
dVDS/dt
dV/dt
-di/dt
PD
20
5
kV/s
kV/µs
A/µs
W
VDS 500V
=
*2
100
*3
2.02
Ta=25°C
Tc=25°C
Gate(G)
195
Operating and storage
temperature range
Tch
+150
Source(S)
°C
°C
Tstg
-55 to +150
*1 L=2.20mH, Vcc=50V, Starting Tch=25°C,See to Avalanche Energy Graph
<
<
<
*2 IF -ID, -di/dt=100A/µs, VCC BVDSS, Tch 150°C
=
=
=
<
<
<
*3 IF -ID, dV/dt=5kV/µs, VCC BVDSS, Tch 150°C
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Test Conditions
Item
Symbol
V(BR)DSS
VGS(th)
µ
ID= 250 A
VGS=0V
Drain-source breakdown voltaget
Gate threshold voltage
500
V
µ
ID= 250 A
VDS=VGS
V
3.0
5.0
25
Tch=25°C
µA
mA
nA
10
VDS=500V VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
1.0
10
0.42
2
VDS=400V VGS=0V
VGS=±30V VDS=0V
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
IGSS
RDS(on)
gfs
100
ID=6.5A VGS=10V
0.55
Ω
5.5
11
1100
165
9
S
ID=6.5A VDS=25V
VDS=25V
Ciss
Coss
Crss
td(on)
tr
1650
250
pF
VGS=0V
Output capacitance
13.5
f=1MHz
Reverse transfer capacitance
Turn-on time ton
ns
VCC=300V ID=6.5A
23
35
11
71
12
42
15
14
6.5
47
7.5
VGS=10V
Turn-off time toff
td(off)
tf
RGS=10 Ω
28
10
9
VCC=250V
ID=13A
nC
Total Gate Charge
QG
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
IAV
VGS=10V
13
L=2.20mH Tch=25°C
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
1.20
120
0.5
1.80
250
1.2
IF=13A VGS=0V Tch=25°C
IF=13A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
VSD
ns
µC
trr
Qrr
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
0.64
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
62.0
°C/W
1
