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NX26F041A-3V-R

型号：

NX26F041A-3V-R

描述：

1M位和4M位串行闪存2 -PIN接口NXS[ 1M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 2-PIN NXS INTERFACE ]

品牌：

ETC[ ETC ]

页数：

14 页

PDF大小：

245 K

下载PDF手册
NX26F011A  
NX26F041A  
1M-BIT AND 4M-BIT SERIAL FLASH MEMORY  
WITH 2-PIN NXS INTERFACE  
PRE-RELEASE  
MAY1999  
1
2
3
4
5
6
7
8
9
10  
FEATURES  
• Tailored for Portable and Mobile Media-Storage  
– Ideal for portable/mobile applications that transfer  
and store data, audio, or images  
• 1M-bits or 4M-bits of NexFlash Serial Memory  
– 512 or 2,048 sectors of 264 bytes each  
– Simple commands: Reset, Read, Write,  
Ready/Busy  
– Removable Serial Flash Module package option  
– No pre-erase required, auto-erases before write  
• NexFlash™ Non-volatileMemoryTechnology  
– Patented Single-Transistor EEPROM Cell  
– High-density, cost-effective, low-voltage/power  
– 10K/100K endurance, ten years data retention  
• Two-pin NXS Serial Interface  
– Saves Microcontroller-pins, simplifies PCB layout,  
low switching noise compared to parallel Flash  
– Supports clock operation as fast as 16 MHz  
– Multi-device cascading, up to 16 devices  
• Flash Memory for Battery-Operation  
– Single 5V or 3V supply for Read, Erase/Write  
– Icc 5 mA active with 1 µA standby power  
– 5 ms Erase/Write times for efficient battery use  
• Development Tools and Accessories  
– SFK-NXS Serial Flash Development Kit  
Description  
TheNexFlash™NX26F011AandNX26F041ASerialFlash  
Memories are tailored for portable/mobile media-storage  
applicationsthattransferandstoredata,audioandimages.  
Manufactured using NexFlash’s patented single transistor  
EEPROM memory cell, the NX26F011A and NX26F041A  
provide a high-density, low-voltage, low-power, and cost  
effective solution for battery-operated nonvolatile data  
storage requirements. The NX26F011A and NX26F041A  
can operate with a single 5V or 3V supply for Read, Write,  
and Erase. Power consumption is very low due to µA  
standbycurrentandfastErase/Writeperformance(asfast  
as5mspersector)thatminimizespower-ontime,resulting  
inahighlyefficientenergy-per-transferratio.TheNX26F011A  
andNX26F041Aoffer1M-bitsand4M-bitsofFlashmemory  
organized in sectors of 264 bytes each. Each sector is  
individually addressable through basic commands or  
control functions such as Reset, Read, Erase/Write, and  
Ready/Busy. The NXS (NexFlash Serial) 2-wire serial  
interface is ideal for use with microcontrollers since it only  
requirestwopins.Thisleavespinsnormallyusedforparallel  
Flash free for other uses. The NXS interface supports clock  
ratesasfastas16MHzandallowsformulti-devicecascading  
of up to 16 devices. It also simplifies PC-board layout and 11  
generateslesstransientnoisethanparalleldevices.Devel-  
opment is supported with the NexFlash Serial Flash  
Development Kit.  
12  
This document contains PRELIMINARY INFORMATION. NexFlash reserves the right to make changes to its product at any time without notice in order to improve design and supply the  
bestpossibleproduct. Weassumenoresponsibilityforanyerrorswhichmayappearinthispublication.Copyright1998, NexFlashTechnologies, Inc.  
NexFlashTechnologies, Inc.  
1
PRELIMINARYNXSF009A-0599  
05/05/99 ©  
NX26F011A  
NX26F041A  
Pin Descriptions  
PackageTypes  
TheNX26F011AandNX26F041Aisavailableina24/28-pin  
TSOP (Type II) package (Figure 1 and Table 1) or a  
removableSerialFlashModule(seeNX25Mxxx/NX26Mxxx  
Serial Flash Module data sheet for further information).  
Device Address Pins (A0, A1, A2, A3)  
There is no active chip select on the NX26F011A and  
NX26F041A. Instead, four static device address pins  
(A0, A1, A2, and A3) are provided for decoding from one to  
16possibledevices(Figure2).Thisallowsupto4MB(using  
an NX26F011A device) or 32MB (using an NX26F041A  
device) to be addressed via a single 2-wire NXS interface.  
The static address pins (A0-A3) must be tied high or low to  
match the device address field (DA3-DA0) in the sector  
Read and Erase/Write instruction sequences.  
Power Supply Pins (Vcc and GND)  
TheNX26F011AandNX26F041Asupportsinglepowersup-  
plyRead, Erase, andWriteoperationsavailablein5Vand3V  
Vccversions.Activepowerrequirementsareaslowas15mA  
for 3V versions with standby current in the 1 µA range.  
NXS Serial Interface Pins (SCK and SIO)  
No Connect Pins (N/C)  
The 2-wire NXS (NexFlash Serial) interface includes a  
Clock Input pin (SCK) and a single bidirectional I/O pin for  
data (SIO). All data to or from the SIO pin is clocked  
relative to the rising edge of SCK. The 2-wire NXS serial  
interfacemakestheNX26F011AandNX26F041Aanideal  
solutionforremovablenon-volatilestorage. Asimpleedge  
connector or cable/connector with four contacts (SCK,  
SIO, Vcc, and GND) can support communications with  
space efficiency and reliability. The NXS interface can  
operate at clock rates up to 16 MHz for 5V versions.  
The NX26F011A and NX26F041A uses only a few signal  
pins. As a result, the TSOP package has numerous  
noconnects(NC)thathavenoelectricalcontacttothedie.  
1
2
3
4
5
6
7
8
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
A0  
NC  
A2  
NC  
NC  
VCC  
GND  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
Table 1. Pin Descriptions  
A0, A1, A2, A3  
Device Address  
Serial Clock  
Serial Data I/O  
Power Supply  
Ground  
SCK  
SIO  
Vcc  
GND  
NC  
9
10  
11  
12  
13  
14  
A3  
SCK  
A1  
SIO  
No Connect  
Figure 1. NX26F011A and NX26F041A Pin  
Assignments  
2
NexFlashTechnologies, Inc.  
PRELIMINARYNXSF009A-0599  
05/05/99 ©  
NX26F011A  
NX26F041A  
NX26F011A or  
NX26F041A  
U0  
NX26F011A or  
NX26F041A  
U1  
NX26F011A or  
NX26F041A  
U2  
NX26F011A or  
NX26F041A  
U3  
1
0
0
0
0
A0  
A1  
A2  
A3  
1
0
0
0
A0  
A1  
A2  
A3  
0
1
0
0
A0  
A1  
A2  
A3  
1
1
0
0
A0  
A1  
A2  
A3  
....  
2
SCK  
SIO  
3
4
1
0
0
1
A0  
A1  
A2  
A3  
0
1
0
1
A0  
A1  
A2  
A3  
1
1
0
1
A0  
A1  
A2  
A3  
0
0
0
1
A0  
A1  
A2  
A3  
....  
5
NX26F011A or  
NX26F041A  
U8  
NX26F011A or  
NX26F041A  
U9  
NX26F011A or  
NX26F041A  
U10  
NX26F011A or  
NX26F041A  
U11  
6
Figure 2. NX26F011A or NX26F041A Used in a Multi-device Configuration with up to 16-Devices on the 2-wire NSX  
7
FUNCTIONAL OVERVIEW  
Sector 0 (0000H)  
8
2112 Bits (264 Bytes) Per Sector  
The NexFlash NX26F011A and NX26F041A provide up to  
1M-bitsor4M-bitsofnon-volatilememoryorganizedas512  
or2,048smallsectorsof264bytes(4,288bits)each(Figure  
3). Each sector is individually addressable using basic  
instructionsequencesandcontrolfunctionscommunicated  
through the devices 2-wire NXS interface.  
Sector 1 (0001H)  
9
Sector 2 (0002H)  
ReadandErase/WriteInstructionSequences  
10  
11  
12  
Sectors 3-2045/4093  
(0003-1FD/7FD)  
The NX26F011A and NX26F041A have two basic instruc-  
tionsequences:ReadandErase/Write. Unlikesomeother  
Flashtechnologies, the erase and write operations of the  
NX26F011A and NX26F041A are performed together in  
one single operation (as fast as 5 ms per sector). Thus,  
pre-erase of the memory is not necessary.  
Sector 510/2046 (1FE/1FE)  
Sector 511/2047 (1FF/7FF)  
Both Read and Erase/Write instructions are made up of a  
series of serial bit fields that include command, sector  
address, device address, and sector data. The Read  
instructionsequencealsoallowsthedevicetobepolledfor  
Ready/Busy status.  
Figure3. NX26F011AandNX26F041AArray  
NexFlashTechnologies, Inc.  
3
PRELIMINARYNXSF009A-0599  
05/05/99 ©  
NX26F011A  
NX26F041A  
supplyoperatingvoltage).Duringthistimethedevicecanbe  
tested for a Ready/Busy condition via a 16-bit status value  
obtainedintheReadinstructionsequence.TheBusystatus  
condition (6666H) indicates that the device has not yet  
completeditswriteoperationandwillnotacceptreadorwrite  
instructions. The Ready status condition (9999H) indicates  
thatthedeviceisavailableforfurtherreadorwriteoperations.  
Note that a delay time of tRP (~30 µs to 100 µs depending on  
the voltage version being used) is required after the first low  
to high clock transition of the Ready/Busy status read.  
The instruction sequence format, flow charts, and clocking  
diagramsforReadandErase/Writeoperationsareshownin  
Figures 5 and 6, Figures 7 and 8, and Figures 9 and 10,  
respectively. All data within an instruction sequence is  
clockedontherisingedge.Allinstructionsequencefieldsare  
orderedbymostsignificantbitfirst(MSB).Dataiserasedand  
writtentotheNX26F041AandNX26F011Amemoryarraya  
full sector (264 bytes) at a time. If all 264 bytes of a given  
sector are not fully clocked into the device, the remaining  
byte locations will be overwritten with indeterminate values.  
Toensurethehighestlevelofdataintegritywriteoperations  
should be verified and rewritten, if needed, (see High Data  
Integrity Applications).  
SectorTag/SyncBytes  
The first byte of each sector is pre-programmed during  
manufacturingwithaTag/Syncvalueof“C9H”.Althoughthe  
first byte of each sector can be changed, it is recommended  
thatTag/Syncvaluebemaintainedandincorporatedaspart  
of the application’s sector formatting. The Tag/Sync values  
serve two purposes. First, they provide a sync-detect that  
can help verify if the instruction sequence was clocked into  
thedeviceproperly.Secondly,theyserveasatagtoidentify  
a fully functional (valid) sector. This is especially important  
if “restricted sector” devices are used.  
Reset and Idle  
Uponpower-upandbetweenReadandErase/Writeinstruc-  
tion sequences, the device’s internal control logic will be  
reset. This is accomplished by asserting the SCK pin low  
(toVIL)forgreaterthantRESET (~5msto10msdependingon  
the voltage version being used). Once reset, the device  
enters standby operation and will not wake-up until the next  
rising edge of SCK. After an initial rising SCK occurs, the  
device becomes ready for a new instruction sequence. Full  
active power consumption starts after the correct device  
address is decoded during a Read or Write instruction  
sequence. To idle an instruction sequence between clocks,  
SCK must be kept high (at VIH) for as long as needed. Note  
that power will be in the active state when SCK is held high.  
Restricted sector devices provide a more cost effective  
alternativetoNX26F011AorNX26F041Adeviceswith100%  
valid sectors. Restricted sector devices have a limited  
number of sectors (32 maximum. for the NX26F011A and  
NX26F041A)thatdonotmeetmanufacturingprogramming  
criteria over the specified operating range. When such a  
sectorisdetected,thefirstbyteistaggedwithapatternother  
than “C9H”. In addition to individual sector tagging, all  
restricted sectors for a given device are listed in the “device  
information format” (see Device Initialization).  
DeviceInitialization  
Afterpower-upitisrecommendedthatthedeviceinformation  
sector be read to electronically identify the device. The  
deviceinformationformatcontainsadeviceIDthatidentifies  
themanufacturer,partnumber(memorysize),andoperating  
range. It also contains a list of any restricted sectors  
(seeSectorTag/Syncbytes).Forafurtherdescriptionofthe  
NX26F011AandNX26F041Adeviceinformationformat,see  
theSerialFlashDeviceInformationSectorApplicationNote  
SFAN-02.  
HighDataIntegrityApplications  
Data storage applications that use Flash memory or other  
non-volatilemediamusttakeintoconsiderationthepossibil-  
ity of noise or other adverse system conditions that may  
affectdataintegrity.Forthoseapplicationsthatrequirehigher  
levels of data integrity it is a recommended practice to use  
Error Correcting Code (ECC) techniques. The NexFlash  
SerialFlashDevelopmentKitprovidesasoftwareroutinefor  
a 32-bit ECC that can detect up to two bit errors and correct  
one. The ECC not only minimizes problems caused by  
systemnoisebutcanalsoextendFlashmemoryendurance.  
For those systems without the processing power to handle  
ECC algorithms, a simple “verification after write” is recom-  
mended. The NexFlash Serial Flash Development Kit  
software includes a simple Write/Verify routine that will  
comparedatawrittentoagivensectorandrewritethesector  
if the compare is not correct.  
AsshowninFigure6, theaddressforthedeviceinformation  
sector address is at 5000H for both the NX26F011A and  
NX26F041A. The device information sector is a “read-only”  
sector. This assures that all device specific information,  
such as the restricted sector list, is maintained and never  
written over inadvertently.  
Ready/BusyStatus  
After an Erase/Write instruction sequence has been  
executed, the device will become Busy while it erases and  
writes the addressed sector’s memory. This period of time  
willnotexceedtWP (~5to30msbasedonthespecifiedpower  
4
NexFlashTechnologies, Inc.  
PRELIMINARYNXSF009A-0599  
05/05/99 ©  
NX26F011A  
NX26F041A  
Command  
Address  
1
Reserved  
Status  
Data  
2
C3-C0 SA11-0 DA3-0 SA15-12 R31-R0 S15-S0 D0 - - - D2112  
INITIAL CLOCK  
To wake device from standby  
(Data is "Don't Care")  
3
COMMAND TYPE  
1H = Read  
MAIN SECTOR ADDRESS  
000H-1FF for NX26F011A  
000H-7FF for NX26F041A  
4
DEVICE ADDRESS  
A0-A3 pins = 0H-FH  
5
AUXILARY SECTOR ADDRESS  
0H = To address main sector address 0-FFF  
5H = Device information sector  
6
RESERVED  
Use 00 00 00 00H  
INPUT STATUS BYTES  
9999H = Ready, 6666H = Busy  
Note: Delay is required during  
7
status byte read, see tRP in  
AC Characteristics  
8
INPUT SECTOR DATA BITS  
0-2112 (264 Bytes)  
9
Figure 5. Sector Read Instruction - Sequence and Bit Instruction  
10  
11  
12  
NexFlashTechnologies, Inc.  
5
PRELIMINARYNXSF009A-0599  
05/05/99 ©  
NX26F011A  
NX26F041A  
Command  
Address  
Reserved  
Data  
Control  
C3-C0 A11-SA0 DA3-0 A15-12 R31-R0 D0 - - - D2112 X15-X0  
INITIAL CLOCK  
To wake device from standby  
(Data is "Don't Care")  
COMMAND TYPE  
2H = Write  
MAIN SECTOR ADDRESS  
000H-1FF for NX26F011A  
000H-7FF for NX26F041A  
DEVICE ADDRESS  
A0-A3 pins = 0H-FH  
AUXILARY SECTOR ADDRESS  
0H = main sector address 0-FFF  
RESERVED  
Use 00 00 00 00H  
SECTOR DATA BITS  
0-2112 (264 Bytes)  
16 EXTRA CLOCKS  
(Data is "Don't Care")  
Figure 6. Sector Erase/Write Instruction - Sequence and Bit Format  
6
NexFlashTechnologies, Inc.  
PRELIMINARYNXSF009A-0599  
05/05/99 ©  
NX26F011A  
NX26F041A  
Start Sector Read Routine  
Start Sector Erase/Write Routine  
1
Output clock (low to high) to  
wake device from standby  
Call Read Sector Routine to  
check Ready/Busy and Tag  
2
Output Command Sequence:  
Device  
Ready and Sector  
Tag valid  
-Read command C3-C0 (0001B)  
-Main Sector Address A1-A0  
(000-1FF-7FF)  
No*  
3
-Device Address DA3-DA0  
(per state of A3, A2, A1, A0 pins)  
Yes  
Output one clock to wake  
device from stand-by  
-Auxilary Address A15-A12  
0H for main array  
5H device information sector  
4
-Four reserved bytes R31-R0  
(00 00 00 00H)  
Output Command Sequence:  
-Read command C3-C0 (0001B)  
5
-Main Sector Address A1-A0  
(000-1FF-7FF)  
Input Ready/Busy Status S15-S0.  
Note tRP delay time is  
required during status read  
(See AC Timing and Figure 10)  
-Device Address DA3-DA0  
(per state of A3, A2, A1, A0 pins)  
-Auxilary Address A15-A12  
0H for main array  
6
Ready?  
-Four reserved bytes R31-R0  
(00 00 00 00H)  
(99 99H)  
No*  
Yes  
7
Input first byte of data  
(Tag/Sync) from sector  
Output (Rewrite )1st byte of sector  
with C9H Tag/Sync bite  
Valid Sector?  
(C9H)  
8
No*  
Output remaining 264 bytes  
(2112 bits) of sector data  
Yes  
9
Return to write routine?  
Yes*  
Output two bytes of zeros (00 00H)  
No  
Input remaining 264 bytes of  
sector data (2112 bits)  
10  
11  
12  
Assert CLK low for RESET  
to invoke Erase/Write Operation  
and then standby operation  
t
*Set Flag and process  
accordingly upon return  
*Set Flag and process  
accordingly upon return  
Assert CLK low for tRESET to  
reset device and invoke standby  
Return (1)  
Return  
Figure 7. Sector Read Operation Flow Chart  
Figure 8. Sector Erase/Write Operation Flow Chart  
Note:  
1. To ensure higher data integrity verify each sector write with a sector read. See High Data Integrity Applications on Page 4.  
NexFlashTechnologies, Inc.  
7
PRELIMINARYNXSF009A-0599  
05/05/99 ©  
NX26F011A  
NX26F041A  
Device leaves standby mode at this edge  
SCK  
SIO  
0
0
0
1
A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 DA3 DA2 DA1 DA0 A15 A14 A13 A12  
Read  
12-Bit Sector Address  
Device  
Aux.  
Command  
Address  
Address  
SCK  
SIO  
MSB  
LSB  
Four Reserved Bytes (Use 00 00 00 00H)  
tRP  
SCK  
SIO  
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
Status Word (S15-S0): Ready: 9999H or Busy:6666H  
Device Drives SIO Line  
Float SIO so data direction can change from device input to output  
2112 Clocks  
Bytes 0 to 262  
tRESET  
8 Clocks  
SCK  
SIO  
Bytes 0 to 263  
Device Releases SIO Line  
Figure 9. Read Instruction Sequence Clocking  
8
NexFlashTechnologies, Inc.  
PRELIMINARYNXSF009A-0599  
05/05/99 ©  
NX26F011A  
NX26F041A  
1
Device leaves standby mode at this edge  
SCK  
2
0
0
1
0
A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 DA3 DA2 DA1 DA0  
0
0
0
0
SIO  
Write  
12-Bit Sector Address  
Device  
0H  
Command  
Address  
3
SCK  
SIO  
4
MSB  
LSB  
Four reserved bytes (use 00 00 00 00H)  
8 Clocks  
5
8 Clocks  
Byte 0  
2080 Clocks  
SCK  
SIO  
6
Byte 1  
Bytes 2 to 261  
7
Device enters standby mode after  
16 Extra Clocks  
t
WP  
tRESET  
tWP  
8 Clocks  
Byte 263  
8 Clocks  
Byte 262  
8
SCK  
SIO  
Don't Care  
9
Figure 10. Erase/Write Instruction Sequence Clocking  
10  
11  
12  
NexFlashTechnologies, Inc.  
9
PRELIMINARYNXSF009A-0599  
05/05/99 ©  
NX26F011A  
NX26F041A  
ABSOLUTE MAXIMUM RATINGS(1)  
Symbol  
Vcc  
Parameter  
Conditions  
Range  
0 to 7.0  
Unit  
V
SupplyVoltage  
VIN, VOUT  
TSTG  
Voltage Applied to Any Pin  
StorageTemperature  
LeadTemperature  
RelativetoGround  
Soldering, TenSeconds  
–0.5 to Vcc + 0.6  
–65 to +150  
+300  
V
°C  
°C  
TLEAD  
Note:  
1. This device has been designed and tested for the specified operation ranges. Proper operation outside of these levels is not  
guaranteed. Exposure beyond absolute maximum ratings (listed above) may cause permanent damage  
OPERATING RANGES  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
Vcc  
SupplyVoltage  
5.0V  
3.0V  
3.0V  
4.5  
2.7  
5.5  
3.6  
V
V
TA  
AmbientTemperature,Operating  
Commercial  
Extended(1)  
Industrial(1)  
0
–15  
–40  
+70  
+80  
+85  
°C  
°C  
°C  
Note:  
1. Contact NexFlash for availability of extended or industrial grade devices.  
DC ELECTRICAL CHARACTERISTICS  
Symbol  
Parameter  
Conditions  
Min  
Typ  
—
Max  
Unit  
V
VIL  
Input Low Voltage  
Input High Voltage  
Output Low Voltage  
Output High Voltage  
Output Low Voltage CMOS(1)  
Output High Voltage CMOS(1)  
Input Leakage  
–0.4  
Vcc x 0.6  
—
Vcc x 0.2  
Vcc + 0.5  
0.45  
VIH  
—
V
VOL  
IOL = 2 mA, VCC = 4.5V  
IOH = –400 µA, VCC = 4.5V  
VCC = Min, IOL = 10 µA  
VCC = Min, IOH = –10 µA  
0 < VI N < Vcc  
—
V
VOH  
2.4  
—
—
V
VOLC  
VOHC  
IL I  
—
—
0.15  
V
VCC – 0.3  
–10  
—
—
V
—
+10  
µA  
µA  
IOL  
I/O Leakage  
0 < VIN < Vcc, Output Disabled  
–10  
—
+10  
ICC (active)  
Active Power Supply Current(2) fCLK ≤ 8 MHz (1/tCP)  
VCC = 4.5V to 5.5V  
VCC = 2.7V to 3.3V  
—
—
15  
5
30  
10  
mA  
µA  
pF  
pF  
ICCSB (standby) Standby Power Supply Current SIO = 0V or VCC,  
SCK = 0V  
—
—
—
<1  
—
—
10  
10  
10  
CIN  
Input Capacitance(1)  
TA = 25°C, VCC = 5V or 3V  
Frequency = 1 MHz  
COUT  
Output Capacitance(1)  
TA = 25°C, VCC = 5V or 3V  
Frequency = 1 MHz  
Notes:  
1. Tested on a sample basis or specified via design or characterization data.  
2. The device leaves “standby” power consumption after the clock transitions from low-to-high. Full “active” power consumption  
starts after the correct device address has been decoded during a sector read or write sequence.  
10  
NexFlashTechnologies, Inc.  
PRELIMINARYNXSF009A-0599  
05/05/99 ©  
NX26F011A  
NX26F041A  
AC ELECTRICAL CHARACTERISTICS  
5V (16 MHz)  
3V (8 MHz)  
Symbol Description  
Min Typ Max  
Min Typ Max  
Unit  
ns  
1
t
t
t
t
t
t
t
t
CP  
SCKSerialClockPeriod  
62  
26  
—
—
40  
0
—
—
—
—
—
—
—
—
—
—
7
125  
57  
—
—
100  
0
—
—
—
—
—
—
—
—
—
—
5
CL, tCH  
CR  
SCK Serial Clock High or Low Time  
SCK Serial Clock Rise Time(1)  
SCK Serial Clock Fall Time(1)  
ns  
ns  
2
CF  
7
5
ns  
DS  
SIO Setup Time to SCK Rising Edge  
SIO Hold Time From SCK Rising Edge  
SIO Valid after SCK(2)  
—
—
60  
5
—
—
115  
10  
ns  
DH  
ns  
DV  
—
1.5  
—
3
ns  
3
RESET  
SCKLowDurationfor  
µs  
Valid Reset or Standby (See Figures 9 & 10)  
ReadPre-dataDelay(See Figure 9)  
Erase/Write Program Time(3) (See Figure 10)  
t
t
RP  
30  
—
—
100  
—
—
µs  
ms  
4
WP  
—
3
5
—
5
10  
Notes:  
1. Test points are 10% and 90% points for rise/fall times. All other timings are measured at the 50% point.  
2. With 50 pF (8 MHz) or 30 pF (16 MHz) load SIO to GND.  
3. The NX26F011A and NX26F041A are designed for Erase/Write endurances of 10K cycles. Endurance in the range of 100K  
cycles can be obtained using ECC software methods like those provided in the SFK Serial Flash Development Kit.  
5
6
7
CLOCK AND DATA TIMING  
8
9
tCP  
tCH  
tCL  
t
CF  
t
CR  
SCK  
SIO  
10  
11  
12  
tDV  
tDV  
tDS  
tDH  
Read  
Write  
NexFlashTechnologies, Inc.  
11  
PRELIMINARYNXSF009A-0599  
05/05/99 ©  
NX26F011A  
NX26F041A  
PACKAGE INFORMATION  
Plastic TSOP - 28-pin  
Package Code: V (Type I)  
1
E
H
N
D
SEATING PLANE  
A
L
α
e
B
C
A1  
Plastic TSOP (T—Type I)  
Millimeters Inches  
Min Max  
Symbol Min  
Max  
Ref. Std.  
No.Leads  
Notes:  
28  
1. Controlling dimension: millimeters, unless  
A
A1  
B
C
D
E
H
e
1.00  
0.05  
0.15  
0.10  
7.90  
11.60 11.80  
13.30 13.50  
0.55 BSC  
1.20  
0.20  
0.25  
0.20  
8.10  
0.039 0.047  
0.002 0.008  
0.006 0.010  
0.004 0.008  
0.311 0.319  
0.457 0.465  
0.524 0.531  
0.022 BSC  
otherwise specified.  
2. BSC = Basic lead spacing between centers.  
3. Dimensions D and E do not include mold  
flash protrusions and should be measured  
from the bottom of the package.  
4. Formed leads shall be planar with respect  
to one another within 0.004 inches at the  
seating plane.  
L
0.50  
0.70  
0.020 0.028  
α
0°  
5°  
0°  
5°  
12  
NexFlashTechnologies, Inc.  
PRELIMINARYNXSF009A-0599  
05/05/99 ©  
NX26F011A  
NX26F041A  
ORDERING INFORMATION  
Size  
Order Part No.  
Package/Description(2)  
1M-bit  
NX26F011A-3V-R(1)  
NXS, 28-pin, TSOP (Type I)  
≤32 RS, 3V Low Voltage  
1
1M-bit  
NX26F011A-5V-R(1)  
NXS, 28-pin, TSOP (Type I)  
≤32 RS, 5V Standard Voltage  
2
4M-bit  
4M-bit  
NX26F041A-3V-R  
NXS, 28-pin, TSOP (Type I)  
≤32 RS, 3V Low Voltage  
NX26F041A-5V-R(1)  
NXS, 28-pin, TSOP (Type I)  
≤32 RS, 5V Standard Voltage  
3
Notes:  
1. Add E (Extended) or I (Industrial) after package designator (V) for alternative temperature  
grades.  
2. See 26Mxxx data sheet for Serial Flash Module package.  
4
5
6
PRELIMINARY DESIGNATION  
LIFE SUPPORT POLICY  
The “Preliminary” designation on an NexFlash data sheet  
indicates that the product is not fully characterized. The  
specifications are subject to change and are not guaran-  
teed.NexFlashoranauthorizedsalesrepresentativeshould  
be consulted for current information before using this  
product.  
NexFlash does not recommend the use of any of its  
products in life support applications where the failure or  
malfunction of the product can reasonably be expected to  
cause failure in the life support system or to significantly  
affect its safety or effectiveness. Products are not autho-  
rizedforuseinsuchapplicationsunlessNexFlashreceives  
written assurances, to its satisfaction, that:  
7
8
IMPORTANT NOTICE  
(a) the risk of injury or damage has been minimized;  
(b) the user assumes all such risks; and  
9
NexFlash reserves the right to make changes to the  
products contained in this publication in order to improve  
design, performance or reliability. NexFlash assumes no  
responsibility for the use of any circuits described herein,  
conveys no license under any patent or other right, and  
makesnorepresentationthatthecircuitsarefreeofpatent  
infringement. Charts and schedules contained herein  
reflectrepresentativeoperatingparameters,andmayvary  
depending upon a user’s specific application. While the  
informationinthispublicationhasbeencarefullychecked,  
NexFlash shall not be liable for any damages arising as a  
result of any error or omission.  
(c) potential liability of NexFlash is adequately protected  
under the circumstances.  
10  
11  
12  
Trademarks:  
NexFlashTM is a trademark of NexFlash Technologies, Inc.  
All other marks are the property of their respective owners.  
NexFlashTechnologies, Inc.  
13  
PRELIMINARYNXSF009A-0599  
05/05/99 ©  
NX26F011A  
NX26F041A  
14  
NexFlashTechnologies, Inc.  
PRELIMINARYNXSF009A-0599  
05/05/99 ©  
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