WILLAS
2SK3019TT1
SOT-523 Plastic-Encapsulate MOSFETS
N-channel MOSFET
FEATURES
z
z
z
z
Low on-resistance
SOT-523
Fast switching speed
Low voltage drive makes this device ideal for portable equipment
Easily designed drive circuits
1
1. GATE
z
z
Easy to parallel
Pb-Free package is available
2. SOURCE
3. DRAIN
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
Equivalent circuit
Marking: KN
MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Units
Symbol Parameter
Value
VDS
VGSS
ID
30
V
V
Drain-Source Voltage
Gate-Source Voltage
±20
0.1
Continuous Drain Current
Thermal Resistance, Junction-to-Ambient
Power Dissipation
A
RθJA
PD
833
0.15
℃ /W
W
TJ
Junction Temperature
Storage Temperature
150
℃
℃
Tstg
-55~+150
MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate –Source leakage current
Gate Threshold Voltage
VDS
IDSS
VGS = 0V, ID = 10µA
VDS =30V,VGS = 0V
VGS =±20V, VDS = 0V
VDS = 3V, ID =100µA
VGS = 4V, ID =10mA
VGS =2.5V,ID =1mA
VDS =3V, ID = 10mA
30
V
µA
µA
V
1
±1
1.5
8
IGSS
VGS(th)
0.8
20
Ω
Drain-Source On-Resistance
RDS(on)
gFS
13
Ω
Forward Transconductance
Dynamic Characteristics*
Input Capacitance
mS
Ciss
Coss
Crss
13
9
pF
pF
pF
VDS =5V,VGS =0V,f =1MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics*
Turn-On Delay Time
Rise Time
4
td(on)
tr
15
35
80
80
ns
ns
ns
ns
VGS =5V, VDD =5V,
ID =10mA, Rg=10Ω, RL=500Ω,
Turn-Off Delay Time
Fall Time
td(off)
tf
* These parameters have no way to verify.
2012-09
WILLAS ELECTRONIC CORP.
