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2SK3541M3T5

型号:

2SK3541M3T5

描述:

SOT- 723塑封装的MOSFET[ SOT-723 Plastic-Encapsulate MOSFETS ]

品牌:

WILLAS[ WILLAS ELECTRONIC CORP ]

页数:

4 页

PDF大小:

463 K

WILLAS  
2SK3541M3T5  
SOT-723 Plastic-Encapsulate MOSFETS  
N-Channel MOSFET  
FEATURES  
SOT-723  
z
z
z
z
z
Low on-resistance  
Fast switching speed  
Low voltage drive makes this device ideal for portable equipment  
Drive circuits can be simple  
1. GATE  
2. SOURCE  
3. DRAIN  
Parallel use is easy  
APPLICATIONS  
Interfacing , Switching  
MARKING:KN  
KN  
Pb-Free package is available  
RoHS product for packing code suffix ”G”  
Halogen free product for packing code suffix “H”  
*A protection diode is included between the gate and the source terminals to protect the diode against static electricity  
when the product is in use. Use a protection circuit when the fixed voltages are exceeded.  
Maximum ratings (Ta=25unless otherwise noted)  
Parameter  
Symbol  
Value  
30  
Units  
Drain-source voltage  
Gate-source voltage  
VDS  
VGS  
ID  
V
±20  
±100  
Continuous drain current  
Power dissipation  
mA  
W
PD  
0.15  
Thermal resistance from junction to ambient  
Junction temperature  
RθJA  
TJ  
833  
/W  
150  
Storage temperature  
Tstg  
-55 ~+150  
* Pw10µs ,Duty cycle1%  
2012-09  
WILLAS ELECTRONIC CORP.  
WILLAS  
2SK3541M3T5  
SOT-723 Plastic-Encapsulate MOSFETS  
Electrical characteristics (Ta=25unless otherwise noted)  
Parameter  
Drain-source breakdown voltage  
Gate-source leakage current  
Zero gate voltage drain current  
Gate threshold voltage  
Symbol  
V(BR) DSS  
IGSS  
Test Condition  
VGS = 0V, ID =10µA  
Min  
Typ  
Max  
Unit  
V
30  
±1  
1.0  
1.5  
8
VDS =0V, VGS =±20V  
VDS =30V, VGS =0V  
VDS =3V, ID =100µA  
VGS =4V, ID =10mA  
VGS =2.5V, ID =1mA  
VDS =3V, ID =10mA  
µA  
µA  
V
IDSS  
VGS(th)  
0.8  
20  
5
7
Static drain-source on-state resistance  
RDS(on)  
13  
Forward transconductance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
gFS  
Ciss  
Coss  
Crss  
td(on)  
tr  
mS  
13  
9
VDS =5V,VGS =0V,f =1MHz  
pF  
4
15  
35  
80  
80  
VGS=5V,VDD=5V, ID =10mA  
ns  
RL=500,RG=10ꢀ  
Turn-off delay time  
Fall time  
td(off)  
tf  
2012-09  
WILLAS ELECTRONIC CORP.  
WILLAS  
2SK3541M3T5  
SOT-723 Plastic-Encapsulate MOSFETS  
Typical Characteristics  
Output Characteristics  
Transfer Characteristics  
0.20  
0.15  
0.10  
0.05  
0.00  
200  
4.0V  
3.5V  
VGS=3.0V  
Ta=25  
100  
Pulsed  
30  
10  
VGS=2.5V  
3
1
VGS=2.0V  
VGS=1.5V  
VDS=3V  
Ta=25℃  
Pulsed  
0.3  
0.1  
0
1
2
3
4
5
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE VDS (V)  
GATE TO SOURCE VOLTAGE VGS (V)  
RDS(ON)  
ID  
RDS(ON)  
——  
VGS  
——  
60  
40  
20  
0
15  
10  
5
Ta=25℃  
Ta=25℃  
Pulsed  
Pulsed  
ID=100mA  
VGS=2.5V  
ID=50mA  
VGS=4V  
0
3
1
10  
30  
100  
0
5
10  
15  
20  
200  
DRAIN CURRENT ID (mA)  
GATE TO SOURCE VOLTAGE VGS (V)  
IS ——  
VSD  
200  
100  
VGS=0V  
Ta=25℃  
Pulsed  
30  
10  
3
1
0.3  
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
SOURCE TO DRAIN VOLTAGE VSD (V)  
2012-09  
WILLAS ELECTRONIC CORP.  
WILLAS  
2SK3541M3T5  
SOT-723 Plastic-Encapsulate MOSFETS  
Outline Drawing  
SOT-723  
.049(1.25)  
.045(1.15)  
.007(0.17)  
.003(0.07)  
.003(0.8)  
.011(0.27)  
.006(0.15)  
Dimensions in inches and (millimeters)  
Rev.C  
2012-09  
WILLAS ELECTRONIC CORP.  
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