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2SK3019TL

型号:

2SK3019TL

描述:

2.5V驱动N沟道MOS FET[ 2.5V Drive Nch MOS FET ]

品牌:

ROHM[ ROHM ]

页数:

4 页

PDF大小:

78 K

2SK3019  
Transistor  
2.5V Drive Nch MOS FET  
2SK3019  
zDimensions (Unit : mm)  
zStructure  
Silicon N-channel  
MOSFET  
EMT3  
0.7  
1.6  
0.3  
0.55  
( )  
3
zApplications  
( )  
2
( )  
1
Interfacing, switching (30V, 100mA)  
0.2  
0.2  
0.15  
0.5 0.5  
1.0  
(1)Source  
(2)Gate  
zFeatures  
1) Low on-resistance.  
(3)Drain  
Abbreviated symbol : KN  
2) Fast switching speed.  
3) Low voltage drive (2.5V) makes this device ideal for  
portable equipment.  
4) Drive circuits can be simple.  
5) Parallel use is easy.  
zPackaging specifications  
zEquivalent circuit  
Package  
Code  
Taping  
TL  
Drain  
Type  
Basic ordering unit  
(pieces)  
3000  
2SK3019  
Gate  
zAbsolute maximum ratings (Ta=25°C)  
Gate  
Protection  
Diode  
Parameter  
Drain-source voltage  
Gate-source voltage  
Symbol  
Limits  
30  
Unit  
V
Source  
VDSS  
GSS  
V
20  
V
A protection diode is included between the gate  
and the source terminals to protect the diode  
against static electricity when the product is in use.  
Use a protection circuit when the fixed voltages  
are exceeded.  
Continuous  
Pulsed  
I
D
100  
mA  
mA  
mW  
°C  
Drain current  
1
I
DP  
400  
2
Total power dissipation  
Channel temperature  
P
D
150  
Tch  
150  
Storage temperature  
Tstg  
55 to +150  
°C  
1 Pw10µs, Duty cycle1%  
2 With each pin mounted on the recommended lands.  
zThermal resistance  
Parameter  
Channel to ambient  
Symbol  
Rth(ch-a) ∗  
Limits  
833  
Unit  
°C / W  
With each pin mounted on the recommended lands.  
Rev.C  
1/3  
2SK3019  
Transistor  
zElectrical characteristics (Ta=25°C)  
Symbol Min.  
Typ.  
Max.  
1
Unit  
µA  
V
Conditions  
V
GS= 20V, VDS=0V  
Parameter  
I
GSS  
(BR)DSS  
DSS  
30  
Gate-source leakage  
V
I
D=10µA, VGS=0V  
Drain-source breakdown voltage  
I
1.0  
1.5  
8
µA  
V
V
V
DS=30V, VGS=0V  
Zero gate voltage drain curren  
t
V
GS(th)  
DS(on)  
DS(on)  
0.8  
DS=3V, I =100µA  
D
Gate threshold voltage  
R
R
5
I
I
I
D
D
D
=10mA, VGS=4V  
=1mA, VGS=2.5V  
=10mA, VDS=3V  
DS=5V  
Static drain-source on-state  
resistance  
7
13  
|Yfs  
|
20  
ms  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
C
iss  
oss  
rss  
d(on)  
13  
9
V
V
C
GS=0V  
C
4
f=1MHz  
t
t
15  
35  
80  
80  
I
D=10mA, VDD 5V  
t
r
V
GS=5V  
d(off)  
Turn-off delay time  
Fall time  
RL=500Ω  
t
f
RG  
=10Ω  
zElectrical characteristic curves  
0.15  
200m  
2
1.5  
1
V
DS=3V  
V
DS=3V  
4V  
3V  
100m  
50m  
I
D
=0.1mA  
Pulsed  
Ta=25°C  
Pulsed  
Pulsed  
3.5V  
20m  
10m  
5m  
0.1  
0.05  
0
2.5V  
2V  
2m  
1m  
Ta=125°C  
75°C  
25°C  
25°C  
0.5  
0
0.5m  
0.2m  
0.1m  
V
2
GS=1.5V  
0
1
3
4
5
50 25  
0
25  
50  
75 100 125 150  
3
0
1
2
4
DRAIN-SOURCE VOLTAGE : VDS (V)  
CHANNEL TEMPERATURE : Tch (°C)  
GATE-SOURCE VOLTAGE : VGS (V)  
Fig.1 Typical output characteristics  
Fig.2 Typical transfer characteristics  
Fig.3 Gate threshold voltage vs.  
channel temperature  
50  
50  
15  
V
GS=4V  
Ta=25°C  
Pulsed  
V
GS=2.5V  
Pulsed  
Pulsed  
Ta=125°C  
75°C  
Ta=125°C  
75°C  
20  
10  
5
20  
10  
5
25°C  
25°C  
25°C  
10  
5
25°C  
2
2
I
D=0.1A  
1
1
I
D=0.05A  
0.5  
0.001 0.002  
0.5  
0.001 0.002  
0
0.005  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
0
5
10  
15  
20  
0.005  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
DRAIN CURRENT : I  
D
(A)  
GATE-SOURCE VOLTAGE : VGS (V)  
DRAIN CURRENT : ID (A)  
Fig.4 Static drain-source on-state  
resistance vs. drain current (Ι)  
Fig.6 Static drain-source  
on-state resistance vs.  
gate-source voltage  
Fig.5 Static drain-source on-state  
resistance vs. drain current (ΙΙ)  
Rev.C  
2/3  
2SK3019  
Transistor  
9
8
7
0.5  
0.2  
200m  
V
GS=4V  
V
DS=3V  
V
GS=0V  
Pulsed  
Pulsed  
Pulsed  
100m  
50m  
Ta=−25°C  
25°C  
I
D
=100mA  
0.1  
20m  
75°C  
6
5
4
3
2
1
Ta=125°C  
0.05  
125°C  
10m  
5m  
ID=50mA  
75°C  
25°C  
25°C  
0.02  
0.01  
2m  
1m  
0.005  
0.5m  
0.002  
0.001  
0.2m  
0.1m  
0
50 25  
0
25  
50  
75 100 125 150  
0.0001 0.0002  
0.0005 0.001  
0.002  
0.005  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
0
0.5  
1
1.5  
CHANNEL TEMPERATURE : Tch (°C)  
DRAIN CURRENT : ID (A)  
SOURCE-DRAIN VOLTAGE : VSD (V)  
Fig.7 Static drain-source on-state  
resistance vs. channel  
temperature  
Fig.8 Forward transfer  
Fig.9 Reverse drain current vs.  
admittance vs. drain current  
source-drain voltage (Ι)  
200m  
50  
1000  
500  
Ta=25°C  
Ta=25°C  
Pulsed  
Ta=25°C  
t
f
V
V
DD=5V  
GS=5V  
f=1MH  
Z
100m  
50m  
V
GS=0V  
t
d(off)  
20  
10  
5
RG=10Ω  
Pulsed  
200  
100  
Ciss  
20m  
10m  
5m  
V
GS=4V  
0V  
50  
Coss  
t
r
2m  
1m  
20  
10  
5
t
d(on)  
Crss  
2
0.5m  
1
0.2m  
0.1m  
0.5  
0.1 0.2  
2
0.5  
1
2
5
10  
20  
50  
0.1 0.2  
0.5  
1
2
5
10 20 50  
100  
0
0.5  
1
1.5  
DRAIN-SOURCE VOLTAGE : VDS (V)  
DRAIN CURRENT : ID (mA)  
SOURCE-DRAIN VOLTAGE : VSD (V)  
Fig.11 Typical capacitance vs.  
drain-source voltage  
Fig.12 Switching characteristics  
Fig.10 Reverse drain current vs.  
(See Figures 13 and 14 for  
the measurement circuit  
and resultant waveforms)  
source-drain voltage (ΙΙ)  
zSwitching characteristics measurement circuit  
Pulse width  
90%  
50%  
10%  
50%  
V
GS  
V
V
GS  
DS  
I
D
VDS  
RL  
D.U.T.  
10%  
RG  
10%  
90%  
VDD  
90%  
t
d (on)  
tr  
t
f
t
d (off)  
t
off  
t
on  
Fig.13 Switching time measurement circuit  
Fig.14 Switching time waveforms  
Rev.C  
3/3  
Notice  
N o t e s  
1) The information contained herein is subject to change without notice.  
2) Before you use our Products, please contact our sales representative and verify the latest specifica-  
tions :  
3) Although ROHM is continuously working to improve product reliability and quality, semicon-  
ductors can break down and malfunction due to various factors.  
Therefore, in order to prevent personal injury or fire arising from failure, please take safety  
measures such as complying with the derating characteristics, implementing redundant and  
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no  
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by  
ROHM.  
4) Examples of application circuits, circuit constants and any other information contained herein are  
provided only to illustrate the standard usage and operations of the Products. The peripheral  
conditions must be taken into account when designing circuits for mass production.  
5) The technical information specified herein is intended only to show the typical functions of and  
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,  
any license to use or exercise intellectual property or other rights held by ROHM or any other  
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of  
such technical information.  
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-  
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in  
this document.  
7) The Products specified in this document are not designed to be radiation tolerant.  
8) For use of our Products in applications requiring a high degree of reliability (as exemplified  
below), please contact and consult with a ROHM representative : transportation equipment (i.e.  
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety  
equipment, medical systems, servers, solar cells, and power transmission systems.  
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace  
equipment, nuclear power control systems, and submarine repeaters.  
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with  
the recommended usage conditions and specifications contained herein.  
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this  
document. However, ROHM does not warrants that such information is error-free, and ROHM  
shall have no responsibility for any damages arising from any inaccuracy or misprint of such  
information.  
12) Please use the Products in accordance with any applicable environmental laws and regulations,  
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a  
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting  
non-compliance with any applicable laws or regulations.  
13) When providing our Products and technologies contained in this document to other countries,  
you must abide by the procedures and provisions stipulated in all applicable export laws and  
regulations, including without limitation the US Export Administration Regulations and the Foreign  
Exchange and Foreign Trade Act.  
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of  
ROHM.  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2013 ROHM Co., Ltd. All rights reserved.  
R1102  
A
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