SSMMDDTTyypppee
IC
Product specification
2SK2159
SOT-89
Unit: mm
+0.1
4.50
-0.1
+0.1
1.50
-0.1
+0.1
1.80
-0.1
Features
Capable of drive gate with 1.5 V
Small RDS(on)
3
0.53
2
1
RDS(on) = 0.7
RDS(on) = 0.3
MAX. @VGS = 1.5 V, ID = 0.1 A
MAX. @VGS = 4.0 V, ID = 1.0 A
+0.1
0.48
-0.1
+0.1
-0.1
+0.1
0.44
-0.1
1 Gate
1. Source
1. Base
+0.1
3.00
-0.1
2 Drain
2. Drain
2. Collector
3 Source
3. Emiitter
3. Gate
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
60
14
Gate to source voltage
V
A
2.0
Drain current
Idp *
PD
A
4.0
Power dissipation
2.0
W
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10ms,Duty Cycle 50%
Electrical Characteristics Ta = 25
Parameter
Symbol
IDSS
IGSS
VGS(off) VDS=10V,ID=1mA
Testconditons
VDS=60V,VGS=0
VGS= 14V,VDS=0
Min
Typ
0.9
Max
1.0
10
Unit
A
Drain cut-off current
Gate leakage current
A
Gate to source cutoff voltage
Forward transfer admittance
0.5
0.4
1.1
V
VDS=10V,ID=1.0A
VGS=1.5V,ID=0.1A
VGS=2.5V,ID=1.0A
VGS=4.0V,ID=1.0A
S
Yfs
0.55
0.27
0.22
319
109
22
0.7
0.5
0.3
Drain to source on-state resistance
RDS(on)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
td(on)
tr
pF
pF
pF
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
38
128
237
130
ID=1.0A,VGS(on)=3V,RL=25 ,RG=10
,VDD=25V
Turn-off delay time
Fall time
td(off)
tf
Marking
Marking
NW
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