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2SK2479

型号:

2SK2479

描述:

低通态电阻: RDS ( ON) = 7.5最大值( VGS = 10V , ID = 2.0A )高雪崩性能等级。[ Low On-state Resistance:RDS(on)=7.5 max.(VGS=10V,ID=2.0A) High Avalanche Capability Ratings ]

品牌:

TYSEMI[ TY Semiconductor Co., Ltd ]

页数:

2 页

PDF大小:

260 K

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Product specification  
2SK2479  
TO-263  
Unit: mm  
Features  
+0.2  
4.57  
-0.2  
+0.1  
1.27  
-0.1  
Low On-state Resistance:RDS(on)=7.5 max.(VGS=10V,ID=2.0A)  
Low Ciss Ciss=485pF TYP  
High Avalanche Capability Ratings  
+0.1  
1.27  
-0.1  
0.1max  
+0.1  
0.81  
-0.1  
2.54  
1 Gate  
+0.2  
2.54  
-0.2  
+0.1  
5.08  
-0.1  
+0.2  
0.4  
-0.2  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to Source Voltage  
Symbol  
VDSS  
Rating  
900  
30  
Unit  
V
Gate to Source Voltage  
VGSS  
V
Drain Current(DC)  
ID(DS)  
A
3
Drain Current(pulse) *1  
ID(pulse)  
A
8
1.5  
70  
Total Power Dissipation TA=25  
Total Power Dissipation TC=25  
Channel Temperature  
PT  
W
Tch  
Tstg  
IAS  
150  
Storage temperature  
-55 to +150  
Single Avalanche Current *2  
Single Avalanche Energy *2  
*1. PW 10ìs,Dduty cycle 1%.  
*2.Starting Tch=25 ,RG=25Ù,VGS=20V  
3
A
EAS  
5.4  
mJ  
0
http://www.twtysemi.com  
sales@twtysemi.com  
1of 2  
4008-318-123  
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Product specification  
2SK2479  
Electrical Characteristics Ta = 25  
Parameter  
Drain to Source On-state Resistance  
Gate Cut-off Voltage  
Forward Transfer Admittance  
Drain Cut-off Current  
Gate Leakage Current  
Input Capacitance  
Symbol  
Testconditons  
Min  
Typ  
5.6  
Max  
7.5  
Unit  
Ù
RDS(on) VGS = 10 V, ID = 2.0 A  
VGS(off) VDS = 10 V, ID = 1 mA  
2.5  
0.8  
3.5  
V
VDS = 20 V, ID = 2.0 A  
VDS = VDSS, VGS = 0  
VGS = 30 V, VDS = 0  
S
Yfs  
IDSS  
IGSS  
Ciss  
Coss  
Crss  
td(on)  
tr  
100  
ìA  
nA  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
100  
485  
75  
10  
12  
5
VDS = 10 V  
VGS = 0  
Output Capacitance  
Feedback Capacitance  
Turn-on Delay Time  
Rise Time  
f = 1 MHz  
ID = 2.0 A  
VGS = 10 V  
VDD = 150 V  
RG = 10 Ù  
Turn-off Delay Time  
Fall Time  
td(off)  
tf  
35  
8
Total Gate Charge  
Qg  
17  
3
ID = 3.0 A  
VDD = 450 V  
VGS = 10 V  
nC  
Gate-Source Charge  
Gate-Drain Charge  
Qgs  
Qgd  
8
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
VF(S-D) IF = 3.0 A, VGS = 0  
1.0  
670  
3.0  
V
trr  
ns  
ìC  
IF = 3.0 A, VGS = 0  
di/dt = 50 A/ ìs  
Qrr  
http://www.twtysemi.com  
sales@twtysemi.com  
2 of 2  
4008-318-123  
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