SMD Type
MOSFET
Product specification
2SK2731
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
Features
3
Low on-resistance.
Fast switching speed.
Easily designed drive circuits.
Easy to parallel.
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
-0.1
1.9
1.Base
1 GATE
2.Emitter
2 SOURCE
3.collector
3 DRAIN
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
30
20
Gate to source voltage
V
0.2
A
Drain current
Idp *
PD
0.8
A
Power dissipation
0.2
W
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
30
Typ
Max
Unit
V
Drain source breakdown voltage
Drain cut-off current
VDSS
IDSS
IGSS
ID=1mA,VGS=0V
VDS=30V,VGS=0
10
10
A
Gate leakage current
VGS= 20V,VDS=0
A
Gate threshold voltage
Forward transfer admittance
VGS(th) VDS=10V,ID=1mA
1.0
2.5
V
VDS=10V,ID=0.1A
VGS=10V,ID=0.1A
VGS=4V,ID=0.1A
100
ms
Yfs
1.5
2.8
25
2.8
4.5
Drain to source on-state resistance
RDS(on)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
ton
tr
pF
pF
pF
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
15
10
15
20
ID=0.1A,VGS(on)=10V,RG=10 ,RL=150
,VDD=15V
Turn-off delay time
Fall time
toff
tf
90
100
Marking
Marking
KL
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