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MOSFICET
Product specification
2SK3065
SOT-89
Unit: mm
+0.1
4.50
-0.1
+0.1
1.50
-0.1
+0.1
1.80
-0.1
Features
Low on resistance.
High-speed switching.
3
0.53
2
1
Optimum for a pocket resource etc. because of
undervoltage actuation (2.5V actuation).
Driving circuit is easy.
+0.1
0.48
-0.1
+0.1
-0.1
+0.1
0.44
-0.1
Easy to use parallel.
1 Gate
1. Source
It is strong to an electrostatic discharge.
1. Base
+0.1
3.00
-0.1
2 Drain
2. Drain
2. Collector
3 Source
3. Emiitter
3. Gate
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
60
Gate to source voltage
V
20
2
A
Drain current
Idp *
PD
8
0.5
A
W
Power dissipation
TC=25
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
VDSS
IDSS
Testconditons
ID=1mA,VGS=0
Min
60
Typ
Max
Unit
V
Drain to source breakdown voltage
Drain cut-off current
VDS=60V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=1A
VGS=4V,ID=1A
10
10
A
Gate leakage current
IGSS
A
Gate threshold voltage
Forward transfer admittance
VGS(th)
Yfs
0.8
1.5
1.5
V
S
0.25 0.32
Drain to source on-state resistance
RDS(on)
VGS=2.5V,ID=1A
0.35 0.45
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
ton
tr
160
85
pF
pF
pF
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
25
20
50
ID=1A,VGS(on)=4V,RL=30
,VDD=30V,RG=10
Turn-off delay time
Fall time
toff
tf
120
70
Marking
Marking
KE
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