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2SK3065

型号:

2SK3065

描述:

最适合,因为欠驱动( 2.5V驱动)口袋资源等。[ Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). ]

品牌:

TYSEMI[ TY Semiconductor Co., Ltd ]

页数:

1 页

PDF大小:

130 K

MOSFICET  
Product specification  
2SK3065  
SOT-89  
Unit: mm  
+0.1  
4.50  
-0.1  
+0.1  
1.50  
-0.1  
+0.1  
1.80  
-0.1  
Features  
Low on resistance.  
High-speed switching.  
3
0.53  
2
1
Optimum for a pocket resource etc. because of  
undervoltage actuation (2.5V actuation).  
Driving circuit is easy.  
+0.1  
0.48  
-0.1  
+0.1  
-0.1  
+0.1  
0.44  
-0.1  
Easy to use parallel.  
1 Gate  
It is strong to an electrostatic discharge.  
+0.1  
3.00  
-0.1  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to source voltage  
Symbol  
VDSS  
VGSS  
ID  
Rating  
Unit  
V
60  
Gate to source voltage  
V
20  
2
A
Drain current  
Idp *  
PD  
8
0.5  
A
W
Power dissipation  
TC=25  
Channel temperature  
Storage temperature  
Tch  
150  
Tstg  
-55 to +150  
* PW 10 s,Duty Cycle 1%  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
VDSS  
IDSS  
Testconditons  
ID=1mA,VGS=0  
Min  
60  
Typ  
Max  
Unit  
V
Drain to source breakdown voltage  
Drain cut-off current  
VDS=60V,VGS=0  
VGS= 20V,VDS=0  
VDS=10V,ID=1mA  
VDS=10V,ID=1A  
VGS=4V,ID=1A  
10  
10  
A
Gate leakage current  
IGSS  
A
Gate threshold voltage  
Forward transfer admittance  
VGS(th)  
Yfs  
0.8  
1.5  
1.5  
V
S
0.25 0.32  
Drain to source on-state resistance  
RDS(on)  
VGS=2.5V,ID=1A  
0.35 0.45  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
Ciss  
Coss  
Crss  
ton  
tr  
160  
85  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
VDS=10V,VGS=0,f=1MHZ  
25  
20  
50  
ID=1A,VGS(on)=4V,RL=30  
,VDD=30V,RG=10  
Turn-off delay time  
Fall time  
toff  
tf  
120  
70  
Marking  
Marking  
KE  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 1  
4008-318-123  
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