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2SK3295

型号：

2SK3295

描述：

4.5 V可驱动低通态电阻RDS（on ） 1 = 18 m最大。（ VGS = 10V ， ID = 18 A）[ 4.5 V drive available Low on-state resistance RDS(on)1 = 18 m MAX. (VGS = 10 V, ID = 18 A) ]

品牌：

TYSEMI[ TY Semiconductor Co., Ltd ]

页数：

2 页

PDF大小：

139 K

下载PDF手册

SSMMDD TTyyppee

TransistIoCrs

Product specification

2SK3295

TO-263

Unit: mm

Features

+0.2

4.57

-0.2

4.5 V drive available

+0.1

1.27

-0.1

Low on-state resistance

R^DS(on)1= 18 mÙ MAX. (V^GS= 10 V, I^D= 18 A)

Low gate charge

Q^G= 16 nC TYP. (I^D= 35 A, V^DD= 16 V, V^GS= 10 V)

Built-in gate protection diode

+0.1

1.27

-0.1

0.1max

+0.1

0.81

-0.1

Surface mount device available

2.54

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current(DC)

Symbol

V^DSS

Rating

Unit

V^GSS

I^D(DS)

Drain Current(pulse) *

I^D(pulse)

140

1.5

Total Power Dissipation (T^A= 25

Total Power Dissipation (T^C= 25

Channel Temperature

)

Tch

T^stg

150

Storage temperature

-55 to +150

* PW 10ìs,Dduty cycle 1%.

http://www.twtysemi.com

sales@twtysemi.com

1 of 2

4008-318-123

SSMMDD TTyyppee

TransistIoCrs

Product specification

2SK3295

Electrical Characteristics Ta = 25

Parameter

Drain Cut-off Current

Gate Leakage Current

Gate Cut-off Voltage

Symbol

I^DSS

Testconditons

V^DS= 20 V, V^GS= 0 V

V^GS= 20 V, V^DS= 0 V

Min

Typ

Max

Unit

ìA

I^GSS

V^GS(off)V^DS= 10 V, I^D= 1 mA

V^DS= 10 V, I^D= 18 A

1.0

7.5

2.5

Forward Transfer Admittance

Y^fs

R^DS(on)1V^GS= 10 V, I^D= 18 A

R^DS(on)2V^GS= 4.5 V, I^D= 18 A

mÙ

Drain to Source On-state Resistance

Input Capacitance

Output Capacitance

Feedback Capacitance

Turn-on Delay Time

Rise Time

C^iss

C^oss

C^rss

t^d(on)

t^r

V^DS= 10 V

720

370

180

V^GS= 0 V

f= 1 MHz

V^DD= 10 V , I^D= 18 A

V^GS(on)= 10 V

R^G= 10 Ù

2000

Turn-off Delay Time

Fall Time

t^d(off)

t^f

270

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Q^g

V^DD= 16 V

V^GS= 10 V

I^D= 35 A

Q^gs

Q^gd

3.1

5.2

1.0

V^F(S-D)I^F= 35 A, V^GS= 0 V

t^rr

I^F= 35 A, V^GS= 0 V

di/dt = 100 A/ ìs

Q^rr

http://www.twtysemi.com

sales@twtysemi.com

2 of 2

4008-318-123

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