SSMMDD TTyyppee
TraMnOsiSstFIoCErsT
Product specification
2SK3355
TO-263
Unit: mm
+0.2
4.57
-0.2
Features
+0.1
1.27
-0.1
Super low on-state resistance:
RDS(on)1 = 5.8 m MAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 8.8m MAX. (VGS = 4 V, ID = 42 A)
Low Ciss: Ciss = 9800 pF TYP.
Built-in gate protection diode
+0.1
-0.1
0.1max
1.27
+0.1
0.81
-0.1
2.54
1 Gate
+0.2
2.54
-0.2
+0.1
5.08
-0.1
+0.2
0.4
-0.2
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
Rating
60
Unit
V
Gate to source voltage
VGSS(AC)
ID
V
20
A
83
Drain current
Idp *
A
332
1.5
Power dissipation
TA=25
TC=25
PD
W
100
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Symbol
IDSS
IGSS
VGS(off)
Yfs
Testconditons
VDS=60V,VGS=0
Min
Typ
Max
10
Unit
A
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=42A
VGS=10V,ID=42A
VGS=4V,ID=42A
10
A
1.5
39
2.0
77
2.5
V
Forward transfer admittance
S
4.6
5.8
8.8
m
Drain to source on-state resistance
RDS(on)
6.1
m
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
ton
9800
1500
630
130
1450
510
510
170
28
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS=10V,VGS=0,f=1MHZ
tr
ID=42A,VGS(on)=10V,RG=10 ,VDD=30V
Turn-off delay time
Fall time
toff
tf
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VDD = 48V, VGS = 10 V, ID = 83A
46
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