S
M
ype
TraMnOsiSstFIIoCCErsT
Product specification
2SK3365
TO-252
Features
Unit: mm
+0.15
-0.15
+0.1
2.30
-0.1
Super low on-state resistance:
6.50
+0.2
5.30
-0.2
+0.8
0.50
-0.7
RDS(on)1 = 14 m MAX. (VGS = 10 V, ID = 15 A)
RDS(on)2 = 21m MAX. (VGS = 4.5 V, ID = 15A)
RDS(on)3 = 29m MAX. (VGS = 4 V, ID = 15A)
Low Ciss: Ciss = 1300 pF TYP.
0.127
max
+0.1
0.80
-0.1
Built-in gate protection diode
+0.1
0.60
-0.1
2.3
4.60
1 Gate
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
30
Gate to source voltage
V
20
A
30
120
Drain current
Idp *
A
1.0
Power dissipation
TA=25
TC=25
PD
W
36
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Symbol
IDSS
IGSS
VGS(off)
Yfs
Testconditons
VDS=30V,VGS=0
Min
Typ
Max
10
Unit
A
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=15A
VGS=10V,ID=15A
VGS=4.5V,ID=15A
VGS=4.0V,ID=15A
10
A
1.5
8.0
2.0
16.0
11.5
15.2
18
2.5
V
Forward transfer admittance
S
14
21
29
m
Drain to source on-state resistance
RDS(on)
m
m
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
ton
1300
405
190
37
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS=10V,VGS=0,f=1MHZ
tr
500
75
ID=15A,VGS(on)=10V,RG=10 ,VDD=15V
Turn-off delay time
Fall time
toff
tf
95
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
25
VDD = 24V, VGS = 10 V, ID = 30A
4.5
7.0
1
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