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2SK3494

型号:

2SK3494

描述:

低导通电阻,低的Qg高雪崩耐[ Low on-resistance, low Qg High avalanche resistance ]

品牌:

TYSEMI[ TY Semiconductor Co., Ltd ]

页数:

1 页

PDF大小:

101 K

Product specification  
2SK3494  
TO-263  
Unit: mm  
+0.2  
4.57  
-0.2  
+0.1  
1.27  
-0.1  
Features  
Low on-resistance, low Qg  
High avalanche resistance  
+0.1  
-0.1  
0.1max  
1.27  
+0.1  
0.81  
-0.1  
2.54  
1 Gate  
+0.2  
2.54  
-0.2  
+0.1  
5.08  
-0.1  
+0.2  
0.4  
-0.2  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to source voltage  
Symbol  
VDSS  
VGSS  
ID  
Rating  
Unit  
V
250  
Gate to source voltage  
V
30  
20  
A
Drain current  
Idp *  
80  
50  
A
Power dissipation  
TC=25  
TA=25  
PD  
W
1.4  
Channel temperature  
Storage temperature  
Tch  
150  
Tstg  
-55 to +150  
* PW 10 s,Duty Cycle 1%  
Electrical Characteristics Ta = 25  
Parameter  
Drain cut-off current  
Gate leakage current  
Gate threshold voltage  
Forward transfer admittance  
Drain to source on-state resistance  
Input capacitance  
Symbol  
IDSS  
IGSS  
Vth  
Testconditons  
Min  
Typ  
Max  
10  
Unit  
A
VDS=200V,VGS=0  
VGS= 30V,VDS=0  
VDS=10V,ID=1mA  
VDS=10V,ID=10A  
VGS=10V,ID=10A  
1
A
2.0  
7
4.0  
V
14  
82  
S
Yfs  
RDS(on)  
Ciss  
Coss  
Crss  
ton  
105  
m
2450  
356  
40  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
VDS=25V,VGS=0,f=1MHZ  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
36  
Rise time  
tr  
20  
ID=10A,VGS(on)=10V,RL=10  
,VDD=100V  
Turn-off delay time  
toff  
184  
29  
Fall time  
tf  
Total Gate Charge  
QG  
41  
ID =10A, VDD =100V, VGS = 10 V  
Gate to Source Charge  
Gate to Drain Charge  
QGS  
QGD  
8.4  
14  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 1  
4008-318-123  
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