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2SK3731

型号:

2SK3731

描述:

低导通电阻,低的Qg高雪崩耐对于高速切换[ Low on-resistance, low Qg High avalanche resistance For high-speed switching ]

品牌:

TYSEMI[ TY Semiconductor Co., Ltd ]

页数:

2 页

PDF大小:

103 K

TransistIoCrs  
Product specification  
2SK3731  
TO-263  
Unit: mm  
+0.2  
4.57  
-0.2  
Features  
+0.1  
1.27  
-0.1  
Low on-resistance, low Qg  
High avalanche resistance  
For high-speed switching  
+0.1  
1.27  
-0.1  
0.1max  
+0.1  
0.81  
-0.1  
2.54  
1 Gate  
+0.2  
2.54  
-0.2  
+0.1  
5.08  
-0.1  
+0.2  
0.4  
-0.2  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain-source surrender voltage  
Gate-source surrender voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Rating  
230  
30  
Unit  
V
V
20  
A
Peak drain current  
IDP  
80  
A
Avalanche energy capability *  
Power dissipation  
EAS  
668  
50  
mJ  
PD  
W
1.4  
150  
Power dissipation Ta = 25  
Channel temperature  
Tch  
Storage temperature  
Tstg  
-55 to +150  
*: L = 2.79 mH, IL = 20 A, VDD = 50 V, 1 pulse, Ta = 25  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 2  
4008-318-123  
TransistIoCrs  
Product specification  
2SK3731  
Electrical Characteristics Ta = 25  
Parameter  
Drain-source surrender voltage  
Gate threshold voltage  
Drain-source cutoff current  
Gate-source cutoff current  
Drain-source ON resistance  
Forward transfer admittance  
Short-circuit forward transfer capacitance  
Short-circuit output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Symbol  
VDSS  
Vth  
Testconditons  
ID = 1 mA, VGS = 0  
Min  
230  
2.0  
Typ  
Max  
Unit  
V
VDS = 10 V, ID = 1 mA  
VDS = 184 V, VGS = 0  
VGS = 30 V, VDS = 0  
VGS = 10 V, ID = 10 A  
VDS = 10 V, ID = 10 A  
4.0  
10  
1
V
IDSS  
IGSS  
RDS(on)  
|YfS|  
Ciss  
ìA  
ìA  
mÙ  
S
65  
14  
82  
7
360  
394  
49  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
VDS = 25 V, VGS = 0, f = 1 MHz  
Coss  
Crss  
td(on)  
Tr  
31  
VDD  
100 V, ID = 10 A  
Rise time  
RL = 10Ù, VGS = 10 V  
27  
Turn-off delay time  
td(off)  
tf  
VDSF  
trr  
214  
47  
Fall time  
Diode foward voltage  
IDR = 20 A, VGS = 0  
?1.5  
Reverse recovery time  
Reverse recovery charge  
Gate charge load  
L = 230 ìH, VDD = 100 V  
IDR = 10 A, di/dt = 100 A/ìs  
142  
668  
43  
ns  
nC  
nC  
nC  
nC  
/W  
/W  
Qrr  
Qg  
VDD = 100 V, ID = 10 A,VGS = 10 V  
Gate-source charge  
Qgs  
6.6  
16  
Gate-drain charge  
Qgd  
Thermal resistance (ch-c)  
Thermal resistance (ch-a)  
Rth(ch-c)  
Rth(ch-a)  
2.5  
89.2  
http://www.twtysemi.com  
sales@twtysemi.com  
2 of 2  
4008-318-123  
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