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2SK3814

型号：

2SK3814

描述：

低通态电阻RDS（on ） 1 = 8.7米MAX.Low Ç ISS ：C ISS = 5450 pF的典型。[ Low On-state resistance RDS(on)1 = 8.7m MAX.Low C iss: C iss = 5450 pF TYP. ]

品牌：

TYSEMI[ TY Semiconductor Co., Ltd ]

页数：

1 页

PDF大小：

94 K

下载PDF手册

Product specification

2SK3814

TO-252

Unit: mm

Features

+0.15

-0.15

+0.1

2.30

-0.1

6.50

+0.2

5.30

-0.2

+0.8

0.50

-0.7

Low On-state resistance

R^DS(on)1= 8.7mÙ MAX. (V^GS= 10 V, I^D= 30 A)

R^DS(on)2= 10.5 mÙ MAX. (V^GS= 4.5 V, I^D= 30 A)

Low C ^iss: C ^iss= 5450 pF TYP.

0.127

max

+0.1

0.80

-0.1

+0.1

0.60

-0.1

2.3

4.60

1 Gate

+0.15

-0.15

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

Gate to source voltage

Drain current

I^dp*

240

1.0

Power dissipation

TA=25

T^C=25

P^D

Channel temperature

Storage temperature

T^ch

150

T^stg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Symbol

I^DSS

I^GSS

V^GS(off)

Y^fs

Testconditons

Min

Typ

Max

Unit

V^DS=60V,V^GS=0

V^GS= 20V,V^DS=0

V^DS=10V,I^D=1mA

V^DS=10V,I^D=30A

V^GS=10V,I^D=30A

V^GS=4.5V,I^D=30A

Gate leakage current

Gate cut off voltage

100

2.5

1.5

2.0

Forward transfer admittance

R^DS(on)1

R^DS(on)2

C^iss

7.0

8.7

m Ù

Drain to source on-state resistance

7.9

5450

550

350

10.5

m Ù

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C^oss

V^DS=10V,V^GS=0,f=1MHZ

C^rss

t^on

t^r

8.5

I^D=30A,V^GS(on)=10V,R^G=0 ,V^DD=30V

Turn-off delay time

Fall time

t^off

7.7

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Q^G

V^DD= 48V

V^GS= 10 V

I^D=60A

QGS

Q^GD

http://www.twtysemi.com

sales@twtysemi.com

1 of 1

4008-318-123

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