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2SK596S-B

型号：

2SK596S-B

描述：

N沟道JFET[ N-Channel JFET ]

品牌：

ONSEMI[ ONSEMI ]

页数：

7 页

PDF大小：

213 K

下载PDF手册
Ordering number : ENA0944  
2SK596S  
N-Channel JFET  
http://onsemi.com  
20V, 140 to 350 A, 1.0mS, SPA  
μ
Features  
•
Low output noise voltage : V =--110dB max (V =4.5V, R =1k , Cin=15pF, V =0V, A curve)  
Ω
NO  
CC  
L
IN  
•
•
•
Especiallysuited for use in condenser microphone for audio equipments and telephones  
Excellent transient characteristic  
Adoption of FBET process  
Specifications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Gate-to-Drain Voltage  
Gate Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--20  
10  
GDO  
I
mA  
mA  
mW  
G
Drain Current  
I
1
D
Allowable Power Dissipation  
Junction Temperature  
Storage Temperature  
P
100  
150  
D
Tj  
C
C
°
°
Tstg  
--55 to +150  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
Product & Package Information  
Package Dimensions  
unit : mm (typ)  
• Package  
: SPA  
7524-005  
• JEITA, JEDEC  
: SC-72  
• Minimum Packing Quantity : 500 pcs./bag  
2.2  
4.0  
2SK596S-A  
2SK596S-B  
Marking  
Electrical Connection  
3
596S  
0.4  
0.5  
LOT No.  
2
0.4  
0.4  
1
1
2
3
1.3  
1.3  
1 : Source  
2 : Gate  
3 : Drain  
3.0  
3.8  
SPA  
Semiconductor Components Industries, LLC, 2013  
August, 2013  
51612GB TKIM TC-00002756 No. A0944-1/7  
2SK596S  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
Rank  
min  
--20  
max  
Gate-to-Drain Breakdown Voltage  
Cutoff Voltage  
V
I
=--100  
A
V
V
μ
(BR)GDO  
G
V
(off)  
V
=5V, I =1  
A
μ
--0.4  
--1.5  
GS  
DS  
D
A
B
100  
150  
0.4  
170  
240  
Drain Current  
I
*
V
=5V, V =0V  
A
μ
DSS  
DS GS  
Forward Transfer Admittance  
Input Capacitance  
yfs  
V
DS  
=5V, V =0V, f=1kHz  
GS  
0.8  
4.1  
mS  
pF  
pF  
|
|
Ciss  
Crss  
V
DS  
=5V, V =0V, f=1MHz  
GS  
Reverse Transfer Capacitance  
V
DS  
=5V, V =0V, f=1MHz  
GS  
0.88  
[Ta=25°C, V =4.5V, R =1k , Cin=15pF, See specified Test Circuit.]  
Ω
CC  
L
A
B
A
B
--5.0  
--3.8  
Voltage Gain  
G
V
=10mV, f=1kHz  
dB  
V
IN  
--0.84  
--0.90  
--1.8  
--2.0  
--1.0  
Reduced Voltage Characteristic  
Frequency Characteristic  
G
V
IN  
=10mV, f=1kHz, V =4.5V 1.5V  
dB  
dB  
%
Δ
Δ
→
VV  
CC  
Gvf  
f=1kHz  
110Hz  
→
A
B
2.0  
1.6  
Total Harmonic Distortion  
Output Noise Voltage  
THD  
V
=30mV, f=1kHz  
=0V, A curve  
IN  
IN  
V
NO  
V
--110  
dB  
: The 2SK596S is classified by I  
as follows : (unit : A)  
*
μ
DSS  
Rank  
A
B
I
100 to 170  
150 to 240  
DSS  
Test Circuit  
Voltage Gain  
Frequency Characteristic  
Harmonic Distortion  
Reduced Voltage Characteristic  
1kΩ  
V
=4.5V  
=1.5V  
CC  
V
CC  
33μF  
15pF  
OSC  
+
V
THD  
VTVM  
Ordering Information  
Device  
Package  
SPA  
Shipping  
memo  
2SK596S-A  
500pcs./bag  
500pcs./bag  
Pb Free  
2SK596S-B  
SPA  
No. A0944-2/7  
2SK596S  
I
D
-- V  
DS  
I
-- V  
D GS  
200  
180  
160  
140  
120  
100  
80  
300  
250  
200  
150  
100  
V
DS  
=5V  
V
=0V  
GS  
--0.1V  
60  
--0.2V  
--0.3V  
40  
50  
0
--0.4V  
20  
0
0
2
4
6
8
10  
--0.5  
--0.4  
--0.3  
--0.2  
--0.1  
0
Drain-to-Source Voltage, V  
-- V  
IT16804  
Gate-to-Source Voltage, V  
-- V  
IT16805  
DS  
GS  
I
-- V  
GS  
| yfs | -- I  
D
DSS  
300  
250  
200  
150  
100  
1.0  
0.95  
0.9  
V
V
=5V  
=0V  
V
=5V  
DS  
GS  
DS  
f=1kHz  
0.85  
0.8  
0.75  
0.7  
50  
0
0.65  
0.6  
80  
--0.6  
--0.5  
--0.4  
--0.3  
--0.2  
--0.1  
0
100  
120  
140  
160  
180  
200  
220  
240  
260  
Gate-to-Source Voltage, V  
-- V  
IT16806  
Drain Current, I  
DSS  
-- μA  
IT16807  
GS  
V
GS  
(off) -- I  
DSS  
Ciss -- V  
DS  
0.6  
2
V
=5V  
V
=0V  
DS  
=1μA  
GS  
I
f=1MHz  
D
0.55  
0.5  
10  
7
5
0.45  
0.4  
0.35  
0.3  
3
2
0.25  
1.0  
0.2  
80  
100  
120  
140  
160  
180  
200  
220  
240  
260  
7
2
3
5
7
2
3
1.0  
10  
Drain Current, I  
DSS  
-- μA  
IT16808  
Drain-to-Source Voltage, V  
-- V ITR01788  
DS  
Crss -- V  
G
-- I  
V DSS  
DS  
5
--2.0  
--2.5  
--3.0  
--3.5  
--4.0  
--4.5  
--5.0  
--5.5  
--6.0  
--6.5  
--7.0  
V
=0V  
GS  
G
: V =4.5V  
V
CC  
f=1MHz  
V
=10mV  
IN  
3
2
Cin=15pF  
R =1kΩ  
L
f=1kHz  
I
: V =5.0V  
DSS  
DS  
1.0  
7
5
3
2
0.1  
7
2
3
5
7
2
3
80  
100  
120  
140  
160  
180  
200  
220  
240  
260  
10  
1.0  
Drain-to-Source Voltage, V  
-- V  
Drain Current, I  
-- μA  
IT16809  
ITR01789  
DS  
DSS  
No. A0944-3/7  
2SK596S  
ΔG  
-- I  
THD -- I  
DSS  
VV  
DSS  
--0.7  
--0.75  
--0.8  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
THD : V =4.5V  
ΔG  
:V =4.5V→1.5V  
V
Cin=15pF  
R =1kΩ  
CC  
IN  
Cin=15pF  
VV CC  
V
=30mV  
=10mV  
IN  
R =1kΩ  
L
L
f=1kHz  
f=1kHz  
I
: V =5.0V  
I
: V =5.0V  
DSS  
DS  
--0.85  
--0.9  
DSS  
DS  
--0.95  
--1.0  
--1.05  
--1.1  
80  
100  
120  
140  
160  
180  
200  
220  
240  
260  
80  
100  
120  
140  
160  
180  
200  
220  
240  
260  
Drain Current, I  
DSS  
-- μA  
IT16810  
Drain Current, I  
-- μA  
IT16811  
DSS  
THD -- V  
P
-- Ta  
IN  
D
100  
7
5
120  
100  
80  
THD : V =4.5V  
CC  
Cin=15pF  
R =1kΩ  
f=1kHz  
: V =5.0V  
3
2
L
I
DSS  
DS  
10  
7
5
60  
3
2
1.0  
40  
7
5
20  
0
3
2
0.1  
0
40  
80  
120  
160  
200  
240  
IT16812  
0
20  
40  
60  
80  
100  
120  
140  
160  
Input Voltage, V  
IN  
-- mV  
Ambient Temperature, Ta -- °C  
IT16813  
No. A0944-4/7  
2SK596S  
Bag Packing Specification  
2SK596S-A, 2SK596S-B  
No. A0944-5/7  
2SK596S  
Outline Drawing  
2SK596S-A, 2SK596S-B  
Mass (g) Unit  
0.13  
mm  
* For reference  
No. A0944-6/7  
2SK596S  
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number  
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at  
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no  
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the  
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical  
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use  
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in  
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for  
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors  
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or  
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the  
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PS No. A0944-7/7  
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