IXGR 32N170AH1
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
ISOPLUS247 Outline
IC = I ; VCE = 10 V
Note 2 C25
25
33
S
Cies
Coes
Cres
3700
180
44
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qg
Qge
Qgc
155
30
51
nC
nC
nC
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
td(on)
tri
td(off)
tfi
46
57
270
50
ns
ns
500 ns
100 ns
3.0 mJ
R = 2.7 Ω, VCE = 0.8 VCES
NoG te 3
Eoff
1.5
td(on)
tri
48
42
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
Eon
td(off)
tfi
2.5
300
70
mJ
ns
ns
R = 2.7 Ω, VCE = 0.8 VCES
NoG te 3
Eoff
2.4
mJ
RthJC
RthCK
0.65 K/W
K/W
0.15
See IXGX32N170AH1 for
charcteristic curves
ReverseDiode(FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = 20A, VGE = 0 V, Note 2
2.7
V
IRM
trr
IF = 50A, V = 0 V, -diF/dt = 800 A/µs
50
A
VR = 600 VGE
150
ns
RthJC
1.5 K/W
Notes:1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG.
4. See DH60-18A and IXGH32N170A datasheets for additional
characteristics
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
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5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
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